SIA108DJ-T1-GE3

SiA108DJ www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® Gen IV power MOSFET D 6 • Tuned for the lowest RDS x Qoss • 100% Rg and UIS tested 2. S 7 05 m m 1 m 5m 2.0 Top View 3 G Bottom View 2 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D APPLICATIONS • Primary side switch • DC/DC converter PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration D • Motor drive switch 80 0.038 0.046 7.1 12 Single G • Boost converter • LED backlighting S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA108DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA =25 °C ID 5.3 b, c TA = 70 °C Pulsed drain current (t = 100 μs) IDM Continuous source-drain diode current TC = 25 °C TA = 70 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e LIMIT 80 ± 20 12 a 12 a 6.6 b, c PD TJ, Tstg 30 12 a 2.9 b, c 12 7.2 19 12 3.5 b, c 2.2 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t5s RthJA 28 36 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 5.3 6.5 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W S18-1288-Rev. A, 31-Dec-2018 Document Number: 77827 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA108DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 80 - - VDS/TJ ID = 250 μA - 60 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -6.8 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, VGS = 0 V, TJ = 70 °C - - 10 VDS  5 V, VGS = 10 V 10 - - A  VGS = 10 V, ID = 4 A - 0.032 0.038 VGS = 7.5 V, ID = 2 A - 0.034 0.046 VDS = 15 V, ID = 15 A - 28 - - 545 - - 75 - - 9 - - 9.2 13 - 7.1 10 - 2.8 - - 1.7 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 40 V, VGS = 0 V - 9 - Rg f = 1 MHz 0.3 1.3 2.6 - 10 20 - 5 10 - 14 30 tf - 5 10 td(on) - 11 20 - 5 10 - 12 25 - 5 10 Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 40 V, VGS = 0 V, f = 1 MHz VDS = 40 V, VGS = 10 V, ID = 4 A VDS = 40 V, VGS = 7.5 V, ID = 4 A td(on) tr td(off) tr td(off) VDD = 40 V, RL = 10 , ID  4 A, VGEN = 10 V, Rg = 1  VDD = 40 V, RL = 10 , ID  4 A, VGEN = 7.5 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4 A, VGS = 0 V IF = 4 A, di/dt = 100 A/μs, TJ = 25 °C - - 12 - - 30 - 0.82 1.2 - 30 60 ns - 25 50 nC - 20 - - 10 - A V ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1288-Rev. A, 31-Dec-2018 Document Number: 77827 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA108DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 30 10000 10000 30 VGS = 10 V thru 6 V 1000 VGS = 5 V 15 10 100 1000 20 1st line 2nd line 20 2nd line ID - Drain Current (A) 25 1st line 2nd line 15 TC = 25 °C 10 5 5 TC = 125 °C VGS = 4 V 0 0.5 1.0 1.5 2.0 2.5 TC = -55 °C 0 10 0 0 3.0 1 2 3 Output Characteristics Transfer Characteristics 10000 700 1000 1st line 2nd line 0.03 VGS = 10 V 0.02 100 Ciss 500 1000 1st line 2nd line VGS = 7.5 V 2nd line C - Capacitance (pF) 0.04 400 300 100 200 0.01 100 10 0 5 10 15 20 25 Coss Crss 10 0 0 30 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line VDS = 20 V VDS = 64 V 4 100 2 10 0 2 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) VDS = 40 V 6 10000 2.2 ID = 4 A 0 80 Axis Title 10000 10 8 10 6 Axis Title 10000 600 2nd line RDS(on) - On-Resistance (Ω) 5 VGS - Gate-to-Source Voltage (V) Axis Title 0 4 VDS - Drain-to-Source Voltage (V) 0.05 2nd line VGS - Gate-to-Source Voltage (V) 100 ID = 4 A 2.0 VGS = 10 V 1.8 1000 1.6 1.4 VGS = 7.5 V 1.2 100 1.0 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S18-1288-Rev. A, 31-Dec-2018 1st line 2nd line 2nd line ID - Drain Current (A) 25 Document Number: 77827 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA108DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.16 10000 10000 1000 1 TJ = 25 °C 100 0.1 0.12 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 4 A 0.08 TJ = 125 °C 100 0.04 TJ = 25 °C 10 0.01 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 3.4 10000 30 3.2 25 ID = 250 μA 2.6 100 2.4 1000 20 2nd line P - Power (W) 1000 2.8 1st line 2nd line 3.0 1st line 2nd line 2nd line VGS(th) - (V) 6 15 100 10 5 2.2 10 2.0 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 IDM limited Limited by RDS(on) a 10000 100 μs 1 1000 1st line 2nd line 2nd line ID - Drain Current (A) ID(ON) limited 10 1 ms 10 ms 0.1 100 ms TA = 25 °C, single pulse 100 1s 10 s BVDSS limited DC 0.01 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S18-1288-Rev. A, 31-Dec-2018 Document Number: 77827 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA108DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 20 10000 25 10000 100 1000 15 1st line 2nd line Package limited 10 2nd line P - Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 20 15 10 100 5 5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1288-Rev. A, 31-Dec-2018 Document Number: 77827 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA108DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA (t) 4. Surface mounted Single pulse 0.01 10-4 100 10-3 10-2 10-1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 1st line 2nd line 1000 0.2 0.1 100 0.05 0.02 Single pulse 0.1 10-4 10-3 10-2 10 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77827. S18-1288-Rev. A, 31-Dec-2018 Document Number: 77827 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000