SIA400EDJ-T1-GE3

SiA400EDJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area • Typical ESD Performance 2500 V HBM • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 11.6 PowerPAK SC-70-6L-Single APPLICATIONS • Load Switch, OVP Switch • Boost Converters • DC/DC Converters D Marking Code 2.05 mm 2.05 mm G AIX Part # code XXX Lot Traceability and Date code Ordering Information: SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit 30 ± 12 12a 12a 11b, c 8.8b, c 30 12a 2.9b, c 15 11.25 19.2 12.3 3.5b, c 2.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA400EDJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 34 ID = 250 µA VGS(th) Temperature Coefficient V mV/°C - 3.8 1.5 V VDS = 0 V, VGS = ± 12 V ± 15 µA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 0.6 20 µA A VGS 4.5 V, ID = 11 A 0.016 0.019 VGS 2.5 V, ID = 9.6 A 0.019 0.025 VDS = 10 V, ID = 11 A 50  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1265 VDS = 15 V, VGS = 0 V, f = 1 MHz tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDS = 15 V, VGS = 10 V, ID = 10 A 11.6 17.4 2.9 VDS = 15 V, VGS = 4.5 V, ID = 10 A nC 2.2 f = 1 MHz VDD = 15 V, RL = 1.7  ID  8.8 A, VGEN = 4.5 V, Rg = 1  0.6 3.3 6.6 10 15 23 35 39 9 18 td(on) 4 8 14 21 VDD = 15 V, RL = 1.7  ID  8.8 A, VGEN = 10 V, Rg = 1  tf Fall Time 36 26 td(off) Turn-Off Delay Time 24 tf tr Rise Time pF 80 td(on) Turn-On Delay Time Rise Time 132 25 38 9 18  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 30 IS = 8.8 A, VGS 0 V IF = 8.8 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 23 ns 7 14 nC 9 6 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA400EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-02 0.020 0.015 10-04 IGSS - Gate Current (A) IGSS - Gate Current (mA) TJ = 25 °C 0.010 TJ = 150 °C 10-06 TJ = 25 °C 0.005 10-08 0.000 10-10 0 3 6 9 12 0 15 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 Gate Current vs. Gate-Source Voltage 30 10 VGS = 5 V thru 2.5 V 8 VGS = 2 V ID - Drain Current (A) ID - Drain Current (A) 24 18 12 6 6 TC = 25 °C 4 2 TC = 125 °C VGS = 1.5 V 0 TC = - 55 °C 0 0 0.5 1 1.5 2 0 0.5 VDS - Drain-to-Source Voltage (V) 1 1.5 2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1500 0.030 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 0.024 VGS = 2.5 V 0.018 VGS = 4.5 V 900 600 0.012 300 Coss Crss 0 0.006 0 6 12 18 ID - Drain Current (A) 24 30 0 5 On-Resistance vs. Drain Current and Gate Voltage Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 10 15 20 VDS - Drain-to-Source Voltage (V) For technical questions, contact: pmostechsupport@vishay.com Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA400EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 1.8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 11 A 8 VDS = 15 V 6 VDS = 7.5 V 4 VDS = 24 V 2 0 0 5 10 15 20 1.5 VGS = 2.5 V 1.2 0.9 0.6 - 50 25 VGS = 4.5 V ID = 11 A - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 0.030 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 11 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.0 0.024 TJ = 125 °C 0.018 TJ = 25 °C 0.012 0.006 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 30 1.2 25 1 Power (W) VGS(th) (V) 20 0.8 ID = 250 μA 15 10 0.6 5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Threshold Voltage www.vishay.com 4 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power (Junction-to-Ambient) For technical questions, contact: pmostechsupport@vishay.com Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA400EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 28 Limited by RDS(on)* 100 μs 1 ms 1 10 ms 100 ms 21 ID - Drain Current (A) ID - Drain Current (A) 10 1 s, 10 s 0.1 14 Package Limited 7 DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 0 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0 25 50 75 100 125 150 125 150 TC - Case Temperature (°C) Current Derating** Safe Operating Area, Junction-to-Ambient 2.0 25 20 15 Power (W) Power (W) 1.5 10 1.0 0.5 5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) Power, Junction-to-Ambient ** The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA400EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67844. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 67844 S13-0787-Rev. B, 15-Apr-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000