SIA413ADJ-T1-GE3

SiA413ADJ www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance 05 2. S 7 m m 1 5 2.0 Top View mm 2 3 D G Bottom View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D APPLICATIONS Marking code: BS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a Configuration S • Load switch, PA switch, and battery switch for portable devices        -12 0.029 0.034 0.044 0.100 23 -12 Single G D P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SC-70 SiA413ADJ-T4-GE3 SiA413ADJ-T1-GE3 Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg LIMIT -12 ±8 -12 a -12 a -10 b, c -8 b, c -40 -12 a -2.9 b, c 19 12 3.5 b, c 2.2 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t5s RthJA 28 36 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 5.3 6.5 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W S12-1141-Rev. B, 21-May-12 Document Number: 63650 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA413ADJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -12 - - - V -11 - - 2.7 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -12 V, VGS = 0 V - - -1 VDS = -12 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -6.7 A - 0.024 0.029 VGS = -2.5 V, ID = -6.2 A - 0.028 0.034 VGS = -1.8 V, ID = -2.3 A - 0.036 0.044 VGS = -1.5 V, ID = -1 A - 0.050 0.100 VDS = -10 V, ID = -6.7 A - 30 - - 1800 - - 450 - - 390 - - 38 57 - 23 35 - 3 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -6 V, VGS = -8 V, ID = -10 A VDS = -6 V, VGS = -4.5 V, ID = -10 A - 6.5 - f = 1 MHz - 7 - - 20 30 VDD = -6 V, RL = 0.75 , ID  -8 A, VGEN = -4.5 V, Rg = 1  - 40 60 td(on) tr td(off) - 65 100 tf - 40 60 td(on) - 10 15 - 12 20 - 70 105 - 40 60 tr td(off) VDD = -6 V, RL = 0.75 , ID  -8 A, VGEN = -8 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -8 A, VGS = 0 V IF = -8 A, di/dt = 100 A/μs, TJ = 25 °C - - -12 - - 40 - -0.8 -1.2 V - 40 60 ns - 20 30 nC - 14 - - 26 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1141-Rev. B, 21-May-12 Document Number: 63650 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA413ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 5 thru 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 32 VGS = 2 V 24 16 VGS = 1.5 V 8 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.3 0.6 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 3000 0.07 2500 1.5 Ciss 0.06 0.05 VGS = 1.8 V VGS = 2.5 V 0.04 VGS = 4.5 V 0.03 2000 1500 1000 Coss Crss 500 0 0.02 0 8 16 24 32 0 40 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.2 8 R DS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 0.9 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 6 VDS = 6 V VDS = 9.6 V 4 2 0 0 8 16 24 32 40 ID = 6.7 A VGS = 4.5 V, 2.5 V 1.1 VGS = 4.5 V, 2.5 V 1.0 0.9 0.8 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S12-1141-Rev. B, 21-May-12 150 Document Number: 63650 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA413ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.060 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 6.7 A TJ = 25 °C 10 1 0.048 0.036 TA = 125 °C 0.024 TA = 25 °C 0.012 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 30 0.7 25 ID = 250 µA 20 Power (W) V GS(th) (V) 0.6 0.5 15 0.4 10 0.3 5 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 1000 Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S12-1141-Rev. B, 21-May-12 Document Number: 63650 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA413ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 20 Power Dissipation (W) ID - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S12-1141-Rev. B, 21-May-12 Document Number: 63650 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA413ADJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 0.1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63650. S12-1141-Rev. B, 21-May-12 Document Number: 63650 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000