SiA415DJ
www.vishay.com
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PowerPAK® SC-70-6L Single
S
4
D
5
• TrenchFET® power MOSFET
D
6
• New thermally enhanced PowerPAK®
SC-70 package
- Small footprint area
- Low on-resistance
05
2.
S
7
m
m
1
m
5m
2.0
Top View
3
G
Bottom View
2
D
• Material categorization: for definitions
of compliance please see www.vishay.com/doc?99912
1
D
APPLICATIONS
Marking code: BG
• Load switch, PA switch and battery
switch for portable devices
PRODUCT SUMMARY
VDS (V)
G
-20
RDS(on) max. (Ω) at VGS = -4.5 V
0.035
RDS(on) max. (Ω) at VGS = -2.5 V
0.051
Qg typ. (nC)
15
ID (A) a
-12
Configuration
S
D
Single
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SC-70-6L
Lead (Pb)-free and halogen-free
SiA415DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-20
Gate-source voltage
VGS
± 12
Continuous drain current (TJ = 150 °C)
TA = 25 °C
-12 a
ID
-8.4 b, c
-6.7 b, c
TA = 70 °C
Pulsed drain current
Continuous source-drain diode current
IDM
TC = 25 °C
TA = 25 °C
Maximum power dissipation
TA = 25 °C
-12 a
IS
-2.9 b, c
19
12
PD
W
3.5 b, c
2.2 b, c
TA = 70 °C
Operating junction and storage temperature range
A
-30
TC = 25 °C
TC = 70 °C
V
-12 a
TC = 25 °C
TC = 70 °C
UNIT
TJ, Tstg
-55 to +150
Soldering recommendations (peak temperature) d, e
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, f
t≤5s
SYMBOL
TYPICAL
MAXIMUM
RthJA
28
36
UNIT
°C/W
5.3
6.5
Maximum junction-to-case (drain)
Steady state
RthJC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
-
V
-20
-
-
3.5
-
Static
Drain-source breakdown voltage
ΔVDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
ID = -250 μA
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-0.6
-
-1.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 12 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS ≤ -5 V, VGS = -4.5 V
-20
-
-
VGS = -4.5 V, ID = -5.6 A
-
0.029
0.035
VGS = -2.5 V, ID = -2 A
-
0.042
0.051
VDS = -10 V, ID = -5.6 A
-
20
-
-
1250
-
-
250
-
-
190
-
VDS = -10 V, VGS = -10 V, ID = -8.4 A
-
31
47
-
15
23
VDS = -10 V, VGS = -4.5 V, ID = -8.4 A
-
2.8
-
-
5
-
-
7
-
-
25
40
-
50
75
-
40
60
tf
-
20
30
td(on)
-
10
15
-
10
15
-
45
70
-
12
20
RDS(on)
gfs
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -10 V, VGS = 0 V, f = 1 MHz
f = 1 MHz
td(on)
VDD = -10 V, RL = 1.5 Ω
ID ≅ -6.7 A, VGEN = -4.5 V, Rg = 1 Ω
tr
td(off)
VDD = -10 V, RL = 1.5 Ω
ID ≅ -6.7 A, VGEN = -10 V, Rg = 1 Ω
tr
td(off)
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
TC = 25 °C
IS = -6.7 A, VGS = 0 V
-
-
-12
-
-
30
-
-0.8
-1.2
A
V
Body diode reverse recovery time
trr
-
35
55
ns
Body diode reverse recovery charge
Qrr
-
21
35
nC
Reverse recovery fall time
ta
-
12
-
Reverse recovery rise time
tb
-
23
-
IF = -6.7 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
30
VGS = 5 V thru 3 V
TC = -- 55 °C
4
VGS = 2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
25
20
15
10
VGS = 2 V
3
TC = 25 °C
2
TC = 125 °C
1
5
VGS = 1.5 V
0
0
0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
3.0
0
0.5
1.0
1.5
VGS - Gate-to-Source Voltage (V)
2.0
Transfer Characteristics
Output Characteristics
2100
0.08
0.06
C - Capacitance(pF)
R DS(on) - On-Resistance (Ω)
1800
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
1500
Ciss
1200
900
600
Coss
300
Crss
0
0
0
5
10
15
20
I D - Drain Current (A)
25
0
30
4
8
16
20
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.4
10
R DS(on) - On-Resistance (Normalized)
ID = 8.4 A
VGS - Gate-to-Source Voltage (V)
12
VDS - Drain-to-Source Voltage (V)
8
VDS = 10 V
6
VDS = 16 V
4
2
ID = 5.6 A
1.3
VGS = 4.5 V, 2.5 V
1.2
1.1
1.0
0.9
0.8
0.7
0
0
8
16
24
Qg - Total Gate Charge (nC)
Gate Charge
S-80435-Rev. B, 03-Mar-08
32
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69512
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5.6 A
10
TJ = 150 °C
TJ = 25 °C
1
0.08
0.06
125 °C
0.04
25 °C
0.02
0.00
0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5
On-Resistance vs. Gate-to-Source Voltage
1.2
30
1.1
25
ID = 250 µA
1.0
20
Power (W)
VGS(th) (V)
0.9
0.8
0.7
15
10
0.6
5
0.5
0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
Threshold Voltage
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
1
10 ms
100 ms
1s
10 s
TA = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
25
Power Dissipation (W)
I D - Drain Current (A)
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating a
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA415DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69512.
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
