SIA418DJ-T1-GE3

SiA418DJ Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC PowerPAK® SC-70-6L-Single APPLICATIONS • DC/DC Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On - High Efficiency from Fast Turn-Off - Lower Shoot-Through Possibility 1 D 2 D 3 6 • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G D D 5 S D 2.05 mm S Marking Code 2.05 mm 4 APX Part # code Bottom View G XXX Ordering Information: SiA418DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Lot Traceability and Date code S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TA = 25 °C 12a ID 12a,b, c 9.7b, c 40 TA = 70 °C IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 2.9b, c 19 TJ, Tstg Operating Junction and Storage Temperature Range 12 PD TA = 70 °C A 12a IS TC = 25 °C Maximum Power Dissipation V 12a TC = 25 °C TC = 70 °C Unit W 3.5b, c 2.2b, c - 55 to 150 Soldering Recommendations (Peak Temperature)d, e 260 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f t5s Steady State Symbol RthJA Typical 28 5.3 Maximum 36 6.5 Unit Maximum °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Based on package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA418DJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 34 ID = 250 µA mV/°C -5 VGS(th) VDS = VGS, ID = 250 µA 2.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS 5 V, VGS = 10 V 1.2 10 µA A VGS = 10 V, ID = 9 A 0.015 0.018 VGS = 4.5 V, ID = 7 A 0.018 0.022 VDS = 10 V, ID = 9 A 35  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 570 VDS = 15 V, VGS = 0 V, f = 1 MHz 52 VDS = 15 V, VGS = 10 V, ID = 12 A VDS = 15 V, VGS = 4.5 V, ID = 12 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  1.7 0.2 1 2 5 10 10 20 15 30 20 td(on) 12 25 15 30 15 30 10 20 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  tf Fall Time 7.5 10 td(off) Turn-Off Delay Time 17 5 tf tr Rise Time 11 nC 1.6 td(on) Turn-On Delay Time pF 126  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta IS TC = 25 °C 12 ISM VSD Body Diode Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 40 IS = 10 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 20 40 ns 11 20 nC 12 8 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact:: pmostechsupport@vishay.com Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA418DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 3 V 8 6 4 TC = 25 °C TC = 125 °C 2 0 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics 0.025 800 700 Ciss 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.022 VGS = 4.5 V 0.019 0.016 VGS = 10 V 500 400 300 Coss 200 0.013 Crss 100 0.010 0 0 8 16 24 32 40 0 5 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage 30 Capacitance 1.8 10 ID = 9 A 8 RDS(on) - On-Resistance (Normalized) ID = 12 A VGS - Gate-to-Source Voltage (V) 10 15 20 25 VDS - Drain-to-Source Voltage (V) VDS = 15 V 6 VDS = 7.5 V VDS = 24 V 4 2 1.6 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 10 12 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA418DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 ID = 9 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.04 10 TJ = 150 °C TJ = 25 °C 1 0.03 TJ = 125 °C 0.02 TJ = 25 °C 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 2.2 30 2.0 25 1.8 20 1.6 ID = 250 μA 10 1.2 5 0 0.001 1.0 - 25 0 25 50 75 100 125 10 15 1.4 50 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Power (W) VGS(th) (V) Source-Drain Diode Forward Voltage 2 150 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact:: pmostechsupport@vishay.com Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA418DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 ID - Drain Current (A) 25 20 15 10 Package Limited 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Dissipation (W) 20 15 10 5 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 For technical questions, contact:: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA418DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63911. www.vishay.com 6 For technical questions, contact:: pmostechsupport@vishay.com Document Number: 63911 S13-0462-Rev. C, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000