SIA4263DJ-T1-GE3

SiA4263DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® Gen III p-channel power MOSFET D 6 • RDS(on) rating at VGS = -1.8 V • 100 % Rg and UIS tested 05 2. S 7 m m 1 m 5m 2.0 Top View 3 G Bottom View 2 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D APPLICATIONS • Battery management in mobile devices • Battery switch Marking code: KB • Load switch PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V RDS(on) max. (Ω) at VGS = -1.8 V Qg typ. (nC) ID (A) a, d Configuration S G • PA switch -20 0.0199 0.0285 0.0482 19.8 -12 Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA4263DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy LIMIT -20 ±8 -12 a -12 a -7.5 b, c -6 b, c -32 ID IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range UNIT V A -12 e IS -2.74 b, c -10 5 15.6 10 3.29 b, c 2.10 b, c -55 to +150 IAS EAS PD TJ, Tstg mJ W °C THERMAL RESISTANCE RATINGS PARAMETER t≤5s Maximum junction-to-ambient b Maximum junction-to-case (drain) Steady state Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 80 °C/W S21-1182-Rev. A, 06-Dec-2021 SYMBOL RthJA RthJC TYPICAL 30 6.5 MAXIMUM 38 8 UNIT °C/W Document Number: 63163 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA4263DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -12 - - 2.5 - Static Drain-source breakdown voltage ΔVDS/TJ VDS temperature coefficient VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID =-250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 70 °C - - -10 VGS = -4.5 V, ID = -7.5 A - 0.017 0.022 VGS = -2.5 V, ID = -6.4 A - 0.023 0.030 VGS = -1.8 V, ID = -2 A - 0.035 0.0511 VDS = -10 V, ID = -7.5 A - 30 - - 1825 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 210 - - 200 - - 34.8 52.2 μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = -8 V, ID = -7.5 A - 19.8 30 VDS = -10 V, VGS = -4.5 V, ID = -7.5 A - 2.6 - - 3 - f = 1 MHz 2.12 10.6 21.2 - 25 38 - 30 45 - 95 145 tf - 40 60 td(on) - 8 16 td(on) tr td(off) tr td(off) VDD = -10 V, RL = 1.67 Ω, ID ≅ -6 A, VGEN = -4.5 V, Rg = 1 Ω VDD = -10 V, RL = 1.67 Ω, ID ≅ -6 A, VGEN = -8 V, Rg = 1 Ω tf - 20 30 - 115 173 - 40 60 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -6 A, VGS = 0 V IF = -6 A, di/dt = 100 A/μs, TJ = 25 °C - - -8 - - -32 - -0.8 -1.2 - 21 32 ns - 9 18 nC - 9 - - 12 - A V ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1182-Rev. A, 06-Dec-2021 Document Number: 63163 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA4263DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 32 10000 10000 60 VGS = 5 V thru 2.5 V 100 VGS = 1.5 V 8 TC = 25 °C 40 1000 1st line 2nd line 16 2nd line ID - Drain Current (A) 1000 VGS = 2 V 1st line 2nd line 2nd line ID - Drain Current (A) 50 24 30 20 100 10 TC = 125 °C 0 0 0.5 1 1.5 TC = -55 °C 0 10 2 10 0 1 2 3 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 4 Axis Title Axis Title 10000 0.06 10000 2800 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 100 2100 Ciss 1000 1st line 2nd line 1000 0.04 2nd line C - Capacitance (pF) 0.05 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS = 1.8 V 1400 100 700 Coss 0.01 Crss 0 0 10 8 16 24 10 0 32 5 10 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1000 1st line 2nd line VDS = 5 V VDS = 16 V 2 100 1 0 10 0 7 14 21 28 2nd line RDS(on) - On-Resistance (Normalized) VDS = 10 V 4 3 10000 1.5 10000 ID = 7.5 A 20 Axis Title 5 2nd line VGS - Gate-to-Source Voltage (V) 15 VGS = 4.5 V, ID = 7.5 A; VGS = 2.5 V, ID = 6.4 A 1.3 1000 1.1 VGS = 1.8 V, 2 A 100 0.9 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S21-1182-Rev. A, 06-Dec-2021 1st line 2nd line 0 Document Number: 63163 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA4263DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 2nd line RDS(on) - On-Resistance (Ω) TJ = 150 °C 1000 1st line 2nd line 2nd line IS - Source Current (A) 10 1 TJ = 25 °C 0.1 100 0.01 0.001 0.05 0.2 0.4 0.6 0.8 1.0 1000 0.04 0.03 TJ = 150 °C 0.02 100 TJ = 25 °C 0.01 0 10 0 10000 0.06 1.2 10 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.7 10000 30 ID = 250 μA 25 2nd line Power (W) 1st line 2nd line 0.4 0.3 1000 20 1000 0.5 1st line 2nd line 0.6 2nd line VGS(th) (V) 1st line 2nd line 100 15 100 10 100 5 0.2 0.1 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 10 100 μs 1000 Limited by RDS(on) a 1 ms 1 10 ms 100 ms 100 10s, 1s 0.1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited DC TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S21-1182-Rev. A, 06-Dec-2021 Document Number: 63163 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA4263DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 18 1000 1st line 2nd line 2nd line ID - Drain Current (A) 24 12 100 6 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 20 10000 2.0 100 5 1000 1st line 2nd line 10 2nd line P - Power (W) 1.5 1000 1st line 2nd line 2nd line P - Power (W) 15 10000 1.0 100 0.5 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-1182-Rev. A, 06-Dec-2021 Document Number: 63163 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA4263DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 80 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.001 100 (t) 4. Surface mounted 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63163. S21-1182-Rev. A, 06-Dec-2021 Document Number: 63163 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000