SiA429DJT
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
Thin PowerPAK® SC-70-6L Single
S
4
• TrenchFET® power MOSFET
D
6
D
5
0.6 mm
05
2.
S
7
m
m
1
5
2.0
3
G
mm
Top View
2
D
1
D
Bottom View
Marking code: BP
• New thermally enhanced PowerPAK®
SC-70 package
- Small footprint area
- Ultra-thin 0.6 mm height
- Low on-resistance
• 100 % Rg tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = -4.5 V
RDS(on) max. () at VGS = -2.5 V
-20
0.0205
0.0270
RDS(on) max. () at VGS = -1.8 V
0.0360
RDS(on) max. () at VGS = -1.5 V
Qg typ. (nC)
ID (A) a
Configuration
0.0600
24.5
-12
Single
S
• Load switch and charger
switch for portable devices
• DC/DC converter
G
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Thin PowerPAK SC-70
SiA429DJT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 300 μs)
Continuous source-drain diode current
Maximum power dissipation
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
IS
PD
TJ, Tstg
LIMIT
-20
±8
-12 a
-12 a
-10.6 b, c
-8.5 b, c
-30
-12 a
-2.9 b, c
19
12
3.5 b, c
2.2 b, c
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t5s
Steady state
SYMBOL
RthJA
RthJC
TYPICAL
28
5.3
MAXIMUM
36
6.5
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA429DJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
-
V
-12
-
-
2.7
-
Static
Drain-source breakdown voltage
VDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
VGS(th)/TJ
ID = -250 μA
Gate-source threshold voltage
mV/°C
VGS(th)
VDS = VGS, ID = -250 μA
-0.4
-
-1
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 8 V
-
-
± 100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS -5 V, VGS = -4.5 V
-20
-
-
VGS = -4.5 V, ID = -6 A
-
0.0170
0.0205
VGS = -2.5 V, ID = -2 A
-
0.0220
0.0270
VGS = -1.8 V, ID = -2 A
-
0.0290
0.0360
VGS = -1.5 V, ID = -1 A
-
0.0380
0.0600
VDS = -10 V, ID = -6 A
-
30
-
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
1750
-
VDS = -10 V, VGS = 0 V, f = 1 MHz
-
270
-
-
240
-
VDS = -10 V, VGS = -8 V, ID = -10 A
-
41
62
-
24.5
37
VDS = -10 V, VGS = -4.5 V, ID = -10 A
-
2.4
-
-
6.7
-
f = 1 MHz
1.3
6.3
13
-
22
35
-
25
40
td(on)
tr
td(off)
VDD = -10 V, RL = 1.2
ID -8.5 A, VGEN = -4.5 V, Rg = 1
-
70
105
tf
-
25
40
td(on)
-
10
15
tr
td(off)
VDD = -10 V, RL = 1.2
ID -8.5 A, VGEN = -8 V, Rg = 1
tf
pF
nC
ns
10
15
-
80
120
-
25
40
-
-
-12
-
-
-30
-
-0.8
-1.2
V
-
35
60
ns
-
18
30
nC
-
13
-
-
22
-
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -8.5 A, VGS = 0 V
IF = -8.5 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2%
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA429DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
30
V GS = 5 V thru 2 V
16
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
V GS = 1.5 V
10
12
8
T C = 25 °C
4
5
T C = 125 °C
T C = - 55 °C
V GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
3500
0.08
V GS = 1.5 V
3000
V GS = 1.8 V
0.06
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.07
0.05
0.04
0.03
V GS = 2.5 V
0.02
Ciss
1500
1000
500
Crss
0
0
0
5
10
15
20
25
0
30
5
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
20
1.65
ID = 10 A
V DS = 5 V
1.45
V DS = 10 V
V DS = 16 V
4
2
V GS = 4.5 V; 2.5 V; I D = 6 A
(Normalized)
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
2000
Coss
V GS = 4.5 V
0.01
2500
1.25
V GS = 1.8 V; I D = 6 A
1.05
V GS = 1.5 V; I D = 1 A
0.85
0
0
10
20
30
40
50
0.65
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA429DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.06
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
100
T J = 150 °C
10
T J = 25 °C
1
0.05
ID = 1 A; T J = 125 °C
0.04
ID = 6 A; T J = 125 °C
0.03
ID = 6 A; T J = 25 °C
0.02
0.1
0.0
0.01
0.2
0.4
0.6
0.8
1.0
0
1.2
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
0.7
25
0.6
20
ID = 250 μA
Power (W)
VGS(th) (V)
1
VSD - Source-to-Drain Voltage (V)
0.8
0.5
15
0.4
10
0.3
5
0.2
- 50
ID = 1 A; T J = 25 °C
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on) *
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA429DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
30
Power Dissipation (W)
ID - Drain Current (A)
25
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating a
Power Derating
125
150
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA429DJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon
technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67038.
S11-0649-Rev. B, 11-Apr-11
Document Number: 67038
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® SC70T
D
A
b
e
PIN3
PIN1
T
L
PIN3
K
E2
E2
D3
D2
b
PIN2
D2
D2
K
K E4 E3 K4 L
PIN2
E
PIN1
E2
e
Terminal #1
Topside View
PIN6
PIN6
PIN4
PIN5
K1
K2
C
PIN4
K2
K1
Backside View of Single
A
PIN5
K2
A1
K3
Backside View of Dual
Z
Detail Z
Z
Side View
SINGLE PAD
DIM.
MIN.
0.525
0
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.375
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
0.175
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
INCHES
MIN.
NOM.
0.0206
0.024
0
0.009
0.012
0.006
0.008
0.078
0.081
0.033
0.037
0.005
0.009
0.078
0.081
0.055
0.059
0.014
0.016
0.017
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.007
0.011
DUAL PAD
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
1
Document Number: 65370
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
0.045
(1.143)
(0.648)
0.022
(0.559)
0.026
0.025
(0.622)
(2.438)
0.096
RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead
0.027
(0.686)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72601
Revision: 21-Jan-08
www.vishay.com
17
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000