SIA437DJ-T1-GE3

SiA437DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) (Max.) ID (A) a 0.0145 at VGS = -4.5 V -29.7 0.0205 at VGS = -2.5 V -25 0.0330 at VGS = -1.8 V -19.7 0.0650 at VGS = -1.5 V -4 Qg (Typ.) S 4 • Thermally enhanced PowerPAK® SC-70 package - Small footprint area 28 nC - Low On-Resistance • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SC-70-6L Single D 5 • TrenchFET® power MOSFET D 6 APPLICATIONS S • Providing low voltage drop in smart phones, tablet PCs, mobile computing: S G - Battery switches 1 D 05 2. m m 1 5 2.0 Top View mm 3 G Bottom View 2 D - Load switches - Power management D P-Channel MOSFET Marking Code: BU Ordering Information: SiA437DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current -23.8 ID -12.6 b, c -10 b, c IDM TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C -16 IS -2.9 b, c 19 12 PD W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A -60 TC = 25 °C TC = 70 °C V -29.7 TA = 70 °C Pulsed Drain Current (t = 300 μs) Unit TJ, Tstg -50 to 150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient b, f t≤5s RthJA 28 36 Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA437DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VDS VGS = 0 V, ID = -250 μA -20 - - - V -11 - - 2.5 - Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -0.9 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS ≤ -5 V, VGS = -4.5 V -10 - - VGS = -4.5 V, ID = -8 A - 0.0120 0.0145 VGS = -2.5 V, ID = -5 A - 0.0170 0.0205 VGS = -1.8 V, ID = -2 A - 0.0250 0.0330 VGS = -1.5 V, ID = -2 A - 0.0370 0.0650 VGS = -10 V, ID = -8 A - 32 - - 2340 - - 305 - - 270 - μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -8 V, ID = -13 A VDS = -10 V, VGS = -4.5 V, ID = -13 A Rg f = 1 MHz td(on) VDD = -10 V, RL = 1 Ω ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω tr td(off) - 60 90 - 28 43 - 4.2 - - 6.8 - 1.6 8 16 - 20 40 - 22 45 - 100 200 tf - 37 75 td(on) - 10 20 VDD = -10 V, RL = 1 Ω ID ≅ -10 A, VGEN = -8 V, Rg = 1 Ω tr td(off) tf - 10 20 - 120 240 - 34 70 pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C IS = -10 A, VGS = 0 V - - -16 - - -60 - -0.75 -1.2 A V Body Diode Reverse Recovery Time trr - 12 25 ns Body Diode Reverse Recovery Charge Qrr - 4 10 nC Reverse Recovery Fall Time ta - 7.5 - Reverse Recovery Rise Time tb - 4.5 - IF = -10 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA437DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 VGS = 5 V thru 2.5 V VGS = 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 VGS = 1.5 V 8 TC = 25 °C 6 4 TC = 125 °C 2 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.100 4000 3200 VGS = 1.5 V Ciss VGS = 1.8 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.080 0.060 0.040 2400 1600 VGS = 2.5 V 0.020 800 Coss VGS = 4.5 V 0.000 0 8 16 24 32 Crss 0 40 5 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.4 ID = 15 A 8 6 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 0 ID - Drain Current (A) VDS = 10 V VDS = 5 V VDS = 16 V 4 2 0 2.0 0 20 40 60 VGS = 4.5 V, 2.5 V; I D = 8 A 1.3 VGS = 1.8 V; I D = 2 A 1.2 1.1 VGS = 1.5 V; ID = 2 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-0764-Rev. B, 14-Apr-14 150 Document Number: 62777 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA437DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.050 100 ID = 8 A 0.040 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.030 0.020 TJ = 125 °C 0.010 TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 0.000 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 30 0.6 25 0.5 20 0.4 ID = 250 μA 15 0.3 10 0.2 5 0.1 - 50 0 VSD - Source-to-Drain Voltage (V) Power (W) VGS(th) (V) 0.1 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 μs 10 ID - Drain Current (A) 0.1 1 ms 1 10 ms 100 ms 1s 10 s 0.1 TA = 25 °C DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA437DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 20 25 Power Dissipation (W) ID - Drain Current (A) 30 20 15 10 15 10 5 5 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) 150 Power Derating * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA437DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 0.1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62777. S14-0764-Rev. B, 14-Apr-14 Document Number: 62777 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000