New Product
SiA438EDJ
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.046 at VGS = 4.5 V
6
0.063 at VGS = 2.5 V
6
VDS (V)
20
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection 1200 V
Qg (Typ.)
3.5 nC
APPLICATIONS
• Load Switch for Portable Applications
• High Frequency DC/DC Converter
PowerPAK SC-70-6L-Single
D
1
D
2
D
Marking Code
3
6
G
D
G
ANX
5
2.05 mm
Part # code
S
D
S
XXX
Lot Traceability
and Date code
2.05 mm
4
S
Ordering Information: SiA438EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
Continuous Source-Drain Diode Current
ID
IDM
IS
PD
TJ, Tstg
Limit
20
± 12
6a
6a
5.7b, c
4.5b, c
15
6a
1.75b, c
11.4
7.3
2.4b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t≤5s
RthJA
41
52
Maximum Junction-to-Ambientb, f
°C/W
RthJC
9
11
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
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1
New Product
SiA438EDJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IGSS
IDSS
ID(on)
RDS(on)
gfs
ID = 250 µA
VDS = VGS , ID = 250 µA
V
23
mV/°C
- 3.3
0.6
1.4
VDS = 0 V, VGS = ± 12 V
± 70
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = 20 V, VGS = 0 V
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ 5 V, VGS = 4.5 V
10
V
µA
A
VGS = 4.5 V, ID = 3.9 A
0.037
0.046
VGS = 2.5 V, ID = 3.3 A
0.051
0.063
VDS = 10 V, ID = 3.9 A
14
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
350
VDS = 10 V, VGS = 0 V, f = 1 MHz
Turn-On Delay Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
pF
37
VDS = 10 V, VGS = 10 V, ID = 5.1 A
Rise Time
63
VDS = 10 V, VGS = 4.5 V, ID = 5.1 A
7.5
12
3.5
5.5
0.95
0.75
f = 1 MHz
Ω
3.5
td(on)
10
15
tr
12
20
18
30
td(off)
tf
VDD = 10 V, RL = 2.4 Ω
ID ≅ 4.1 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
tr
td(off)
tf
nC
VDD = 10 V, RL = 2.4 Ω
ID ≅ 4.1 A, VGEN = 10 V, Rg = 1 Ω
12
20
5
10
12
20
15
25
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
6
15
IS = 4.1 A, VGS = 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
8
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C
8
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10-1
4.00
10-2
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
10-3
3.00
2.00
IGSS at 25 °C
1.00
10-4
10-5
TJ = 150 °C
10-6
TJ = 25 °C
10-7
10-8
10-9
10-10
10-11
0.00
0
3
6
9
12
0
15
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
5
VGS = 5 thru 3 V
VGS = 2.5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
12
9
6
VGS = 2 V
3
TC = - 55 °C
3
2
TC = 25 °C
1
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.5
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
500
0.12
Ciss
400
0.09
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS = 2.5 V
0.06
VGS = 4.5 V
300
200
Coss
0.03
100
Crss
0
0.00
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
0
2
4
6
8
10
12
14
16
18
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1.7
ID = 3.9 A
1.5
8
VDS = 10 V
6
VDS = 16 V
4
1.3
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 5.1 A
VGS = 4.5 V, 2.5 V
1.1
0.9
2
0.7
0
0
2
4
6
0.5
- 50
8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.20
100
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2 A
10
TJ = 150 °C
TJ = 25 °C
1
0.16
0.12
0.08
TJ = 125 °C
0.04
TJ = 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.3
30
1.2
25
ID = 250 µA
1.1
Power (W)
VGS(th) (V)
20
1.0
0.9
15
10
0.8
5
0.7
0.6
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
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4
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
12
15
Power Dissipation (W)
I D - Drain Current (A)
12
9
Package Limited
6
9
6
3
3
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
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5
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - T A = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10 -2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69092.
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Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
