SIA450DJ-T1-GE3

New Product SiA450DJ Vishay Siliconix N-Channel 240-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 2.9 at VGS = 10 V 1.52 240 2.95 at VGS = 4.5 V 1.5 3.5 at VGS = 2.5 V 1.44 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 2.54 nC RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6L-Single • Boost Converter for Portable Devices D 1 D Marking Code 2 D 3 6 G D 5 XXX S G Lot Traceability and Date code S D 2.05 mm ADX Part # code 2.05 mm 4 S Ordering Information: SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit 240 ± 20 1.52 1.21 0.70a, b 0.56a, b 1.5 12.8 2.74a, b 15 9.8 3.3a, b 2.1a, b - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 30 38 Maximum Junction-to-Ambienta, e °C/W RthJC 6.5 8.1 Maximum Junction-to-Case (Drain) Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 °C/W. Document Number: 73603 S-80436-Rev. C, 03-Mar-08 www.vishay.com 1 New Product SiA450DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA 240 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 247.4 mV/°C 4.22 0.8 2.4 V ± 100 nA VDS = 240 V, VGS = 0 V -1 VDS = 240 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 10 V, VGS = 10 V 1.5 µA A VGS = 10 V, ID = 0.70 A 2.4 2.9 RDS(on) VGS = 4.5 V, ID = 0.65 A 2.46 2.95 VGS = 2.5 V, ID = 0.50 A 2.85 3.5 gfs VDS = 120 V, ID = 0.70 A 3.14 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 167 VDS = 120 V, VGS = 0 V, f = 1 MHz VDS = 120 V, VGS = 10 V, ID = 0.70 A VDS = 120 V, VGS = 4.5 V, ID = 0.70 A td(off) 4.69 7.035 2.54 3.81 0.58 VDD = 120 V, RL = 200 Ω ID ≅ 0.60 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2 13.7 21 22 33 23 35 tf 19 29 td(on) 4.5 6.75 11 16.5 tr td(off) nC 1.14 f = 1 MHz td(on) tr pF 10 3.4 VDD = 120 V, RL = 184 Ω ID ≅ 0.70 A, VGEN = 10 V, Rg = 1 Ω tf 12 18 15 22.5 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 2.7 12.8 IS = 0.5 A, VGS = 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 50.2 75.3 ns Body Diode Reverse Recovery Charge Qrr 68 102 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 0.5 A, di/dt = 100 A/µs, TJ = 25 °C 25 25.2 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73603 S-80436-Rev. C, 03-Mar-08 New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 1.5 VGS = 10 thru 3 V 1.2 I D - Drain Current (A) I D - Drain Current (A) 1.2 0.9 0.6 0.3 VGS = 2 V VGS = 1 V 0.9 TJ = 25 °C 0.6 TJ = 125 °C 0.3 TJ = - 55 °C 0.0 0 2 4 6 0.0 0.0 8 0.6 1.2 2.4 3.0 3.6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 250 VGS = 2.5 V 200 VGS = 4.5 V 4 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.8 3 VGS = 10 V 2 Ciss 150 100 50 Crss Coss 0 1 0.0 0 0.5 1.0 1.5 2.0 50 100 150 200 250 2.5 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 2.5 VDS = 120 V 8 VGS = 10 V, ID = 0.70 A VGS = 4.5 V, ID = 0.65 A 2.0 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.73 A VDS = 150 V 6 4 2 1.5 VGS = 2.5 V, ID = 0.50 A 1.0 0.5 0 0 1 2 3 4 5 6 0.0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73603 S-80436-Rev. C, 03-Mar-08 150 www.vishay.com 3 New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 10 I D = 0.70 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 6 TA = 125 °C 4 TA = 25 °C 2 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage 2.1 30 ID = 250 µA 25 1.8 Power (W) VGS(th) (V) 20 1.5 1.2 15 10 0.9 5 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 10 Limited by RDS(on)* I D - Drain Current (A) 1 10 ms 100 ms 0.1 1s 10 s 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 1 * VGS 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73603 S-80436-Rev. C, 03-Mar-08 New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 2.0 16 Power (W) I D - Drain Current (A) 1.5 1.0 12 8 0.5 4 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73603 S-80436-Rev. C, 03-Mar-08 www.vishay.com 5 New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) 0.01 Single Pulse 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73603. www.vishay.com 6 Document Number: 73603 S-80436-Rev. C, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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