SIA461DJ-T1-GE3

SiA461DJ www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 05 2. S 7 m m 1 5 2.0 Top View mm D 5 • TrenchFET® power MOSFET D 6 • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance 2 3 D G Bottom View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 D APPLICATIONS Marking code: BV • Smart phones, tablet PCs, mobile computing - Battery switch - Charger switch - Load switch PRODUCT SUMMARY VDS (V) -20 RDS(on) max. () at VGS = -4.5 V 0.033 RDS(on) max. () at VGS = -2.5 V 0.042 RDS(on) max. () at VGS = -1.8 V 0.055 Qg typ. (nC) 18 ID (A) a -12 Configuration (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA461DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e Continuous source-drain diode current ID IDM IS PD TJ, Tstg LIMIT -20 ±8 -12 a -12 a -8.3 b, c -6.6 b, c -20 -12 a -2.8 b, c 17.9 11.4 3.4 b, c 2.2 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t5s RthJA 29 37 Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC 5.5 7 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W S12-0539-Rev. A, 12-Mar-12 Document Number: 63838 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA461DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - V - -18 - - 3 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 85 °C - - -10 ID(on) VDS  -5 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -5.2 A - 0.025 0.033 RDS(on) VGS = -2.5 V, ID = -4.8 A - 0.030 0.042 VGS = -1.8 V, ID = -2 A - 0.040 0.055 VDS = -6 V, ID = -5.2 A - 20 - - 1300 - - 210 - - 180 - gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -8 V, ID = -5.2 A VDS = -10 V, VGS = -4.5 V, ID = -5.2 A f = 1 MHz td(on) tr VDD = -10 V, RL = 2.4  ID  -4.2 A, VGEN = -4.5 V, Rg = 1  - 30 45 - 18 27 - 2.1 - - 4.8 - - 6 - - 20 30 - 22 35 - 50 75 tf - 20 30 td(on) - 10 15 td(off) tr td(off) VDD = -10 V, RL = 2.4  ID  -4.2 A, VGEN = -8 V, Rg = 1  tf pF nC  ns - 12 25 - 50 75 - 15 25 - - -12 - - -20 - -0.8 -1.2 V - 45 70 ns - 40 60 nC - 23 - - 22 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -4.2 A IF =-4.2 A, di/dt =100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2% b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-0539-Rev. A, 12-Mar-12 Document Number: 63838 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA461DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 VGS = 5 V thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 1.5 V 12 8 4 6 TC = 25 °C 4 TC = 125 °C 2 VGS = 1 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) 0.0 0.3 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 2500 0.08 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2000 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V Ciss 1500 1000 500 Coss Crss 0 0.00 0 4 8 12 ID - Drain Current (A) 16 20 0 4 12 16 20 Capacitance On-Resistance vs. Drain Current and Gate Voltage 8 1.5 R DS(on) - On-Resistance (Normalized) ID = 5.2 A VGS - Gate-to-Source Voltage (V) 8 VDS - Drain-to-Source Voltage (V) 6 VDS = 10 V VDS = 16 V 4 2 0 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge S12-0539-Rev. A, 12-Mar-12 25 30 1.4 VGS = 4.5 V; 2.5 V; ID = 5.2 A 1.3 1.2 1.1 VGS = 1.8 V; ID = 2 A 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 63838 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA461DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.08 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5.2 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.06 0.04 TJ = 125 °C TJ = 25 °C 0.02 0.00 VSD - Source-to-Drain Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 0.4 0.6 0.8 1.0 0 1.2 0.9 5 30 0.8 25 0.7 Power (W) VGS(th) (V) 20 0.6 ID = 250 µA 0.5 10 0.4 5 0.3 0.2 - 50 15 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 Threshold Voltage Single Pulse Power 100 1000 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area S12-0539-Rev. A, 12-Mar-12 Document Number: 63838 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA461DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 24 25 20 16 15 Power (W) ID - Drain Current (A) 20 Package Limited 10 12 8 5 4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S12-0539-Rev. A, 12-Mar-12 Document Number: 63838 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA461DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.1 0.2 Notes: Notes: Notes: 0.1 P PDM DM DM P DM 0.05 ttt1111 tt2222 tt11 1. Duty Duty Cycle, Cycle, D D == t11 1. ttt222 2 2. Per Per Unit Unit Base Base == R RthJA = 80 80 °C/W °C/W 2. thJA thJA = 0.02 thJA (t) (t) 3. 3. T PDM (t) JM JM --- T AA = DM DMZ thJA thJA(t) 3. TTJM TTA == P P ZZthJA JM A DM thJA 4. Surface Surface Mounted Mounted 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63838. S12-0539-Rev. A, 12-Mar-12 Document Number: 63838 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000