SiA468DJ
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () (MAX.)
ID (A) a
0.0084 at VGS = 10 V
37.8
0.0114 at VGS = 4.5 V
32.5
Qg (TYP.)
8.2 nC
S
4
• 100 % Rg tested
• The highest continuous drain current capability
in its class
• Very low RDS-Qg FOM and Qgd elevate efficiency
PowerPAK® SC-70-6L Single
D
5
• TrenchFET® Gen IV power MOSFET
D
6
• Increase power density of your design
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
05
2.
S
7
m
m
1
m
5m
2.0
Top View
3
G
Bottom View
2
D
1
D
Marking Code: AX
D
• DC/DC converters and synchronous
buck converters
- Lower ringing voltage from soft turn-on
- High efficiency from fast turn-off
G
- Lower shoot-through possibility
• Battery charging and protection
Ordering Information:
SiA468DJ-T1-GE3 (lead (Pb)-free and halogen-free)
• Load switch
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
+20 / -16
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Current
36.3
ID
16.1 a, b
12.9 a, b
Maximum Power Dissipation
IDM
TC = 25 °C
TA = 25 °C
15.8
IS
2.9 a, b
19
TC = 70 °C
12
PD
W
3.5 a, b
2.2 a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
70
TC = 25 °C
TA = 25 °C
V
37.8
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak temperature) c, d
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum Junction-to-Ambient a, e
t5s
RthJA
28
36
Maximum Junction-to-Case (Drain)
Steady state
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 80 °C/W.
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
-
V
12.8
-
-
-4.8
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 μA
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = +20 V / -16 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance a
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS 5 V, VGS = 10 V
10
-
-
A
VGS = 10 V, ID = 11 A
-
0.0070
0.0084
VGS = 4.5 V, ID = 7 A
-
0.0091
0.0114
VDS = 10 V, ID = 11 A
-
35
-
-
1290
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
435
-
-
30
-
VDS = 15 V, VGS = 10 V, ID = 12 A
-
17.6
22
-
8.2
16
VDS = 15 V, VGS = 4.5 V, ID = 12 A
-
3.1
-
-
1.3
-
f = 1 MHz
0.28
1.4
2.8
-
8
16
-
22
40
-
18
36
tf
-
8
16
td(on)
-
12
25
-
30
45
-
15
30
-
13
26
RDS(on)
gfs
μA
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current a
ISM
Body Diode Voltage
VSD
TC = 25 °C
IS = 10 A
-
-
12
-
-
40
-
0.85
1.2
A
V
Body Diode Reverse Recovery Time
trr
-
30
45
ns
Body Diode Reverse Recovery Charge
Qrr
-
20
35
nC
Reverse Recovery Fall Time
ta
-
17
-
Reverse Recovery Rise Time
tb
-
13
-
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width 100 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
10000
80
VGS = 10 V thru4V
VGS = 3 V
28
100
2nd line
ID - Drain Current (A)
1000
42
1st line
2nd line
2nd line
ID - Drain Current (A)
56
TC = 125 °C
60
1000
1st line
2nd line
70
40
TC = 25 °C
TC = -55 °C
100
20
14
0
0
10
0
0.5
1
1.5
10
0
2
1
2
3
4
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.02
1500
10000
10000
VGS = 4.5 V
0.01
100
VGS = 10 V
0.005
1000
900
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
1200
0.015
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
Ciss
Coss
600
100
300
Crss
0
10
0
14
28
42
56
0
10
0
70
6
12
24
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1.6
8
VDS = 15 V
1000
1st line
2nd line
6
VDS = 24 V
4
100
2
0
10
0
5
10
15
20
VGS = 10 V, ID= 11 A
1.4
1000
1.2
1.0
100
0.8
VGS = 4.5 V, 7 A
0.6
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1266-Rev. A, 27-Jun-16
10000
1st line
2nd line
VDS = 8 V
2nd line
RDS(on) - On-Resistance (Normalized)
10000
ID = 12 A
30
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
18
Document Number: 67408
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
1000
1st line
2nd line
2nd line
IS - Source Current (A)
10
1
TJ = 25 °C
0.1
100
0.01
0.001
0.025
0.2
0.4
0.6
0.8
1.0
1000
0.02
0.015
TJ = 150 °C
0.01
100
TJ = 25 °C
0.005
0
10
0
10000
0.03
10000
1st line
2nd line
100
10
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1.7
ID = 250 μA
1.5
25
1000
20
Power (W)
1.3
1st line
2nd line
2nd line
VGS(th) (V)
30
10000
1.1
100
15
10
0.9
5
0.7
10
-50
-25
0
25
50
75
0
0.001
100 125 150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
2nd line
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
IDM limited
100
10000
10
100 μs
ID limited
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
Limited by RDS(on)(1)
1 ms
1
10 ms
100 ms
0.1
100
DC, 10 s, 1 s
BVDSS limited
TA = 25 °C
Single pulse
0.01
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
42
Package limited
1000
28
1st line
2nd line
2nd line
ID - Drain Current (A)
35
21
14
100
7
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
24
2.20
10000
1.76
18
12
Power (W)
1st line
2nd line
2nd line
Power (W)
1000
1.32
0.88
100
6
0.44
0
10
0
25
50
75
100
125
TC - Case Temperature (°C)
2nd line
Power, Junction-to-Case
150
0.00
0
25
50
75
100
125
150
TA - AmbientTemperature(°C)
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA468DJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67408.
S16-1266-Rev. A, 27-Jun-16
Document Number: 67408
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000