SIA471DJ-T1-GE3

SiA471DJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Single S 4 D 5 • TrenchFET® Gen IV p-channel power MOSFET D 6 • Thermally enhanced PowerPAK® SC-70 package • Very low RDS(on) x area minimizes power loss on limited PCB real estate 05 2. S 7 m m 1 m m .05 2 Top View 3 G Bottom View 2 D • Provides excellent RDS-Qg Figure-of-Merit (FOM) for switching applications 1 D • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration APPLICATIONS -30 0.0140 0.0241 8.9 -30.3 Single • • • • S Battery charging and management G Load switch DC/DC converters Power management in battery-operated, P-Channel mobile and wearable devices MOSFET Marking code: B9 D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA471DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA =25 °C TA = 70 °C Pulsed drain current (t = 100 μs) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d Continuous source-drain diode current SYMBOL LIMIT VDS VGS -30 -20 / +16 -30.3 -24.2 -12.9 a, b -10.3 a, b -70 -16 -2.9 a, b 19.2 12.3 3.5 a, b 2.2 a, b -55 to +150 260 ID IDM IS PD TJ, Tstg UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t5s RthJA 28 36 Maximum junction-to-ambient a, e °C/W Maximum junction-to-case (drain) Steady state RthJC 5.3 6.5 Notes a. Surface mounted on 1" x 1" FR4 board b. t = 5 s c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components e. Maximum under steady state conditions is 80 °C/W S19-0336-Rev. B, 08-Apr-2019 Document Number: 76741 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA471DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V - -15 - - 5 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -10 mA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1 - -2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = -20 V / +16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = 0 V -10 - - A VGS = -10 V, ID = -10 A - 0.0115 0.0140 VGS = -4.5 V, ID = -7 A - 0.0185 0.0241  VDS = -10 V, ID = -10 A - 40 - - 1170 - VDS = -15 V, VGS = 0 V, f = 1 MHz - 570 - - 55 - VDS = -15 V, VGS = -10 V, ID = -12 A - 18.5 27.8 VDS = -15 V, VGS = -4.5 V, ID = -12 A - 8.9 14 - 4.4 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = -4.5 V, ID = -12 A - 2.7 - 0.22 11 22 - 25 50 - 95 190 - 40 80 tf - 18 36 td(on) - 13 26 - 8 16 - 35 70 - 15 30 - - -16 - - -70 f = 1 MHz td(on) tr td(off) tr td(off) VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 1.5 , ID  -10 A, VGEN = -10 V, Rg = 1  tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -10 A, VGS = 0 V IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C A - -0.85 -1.2 V - 21 42 ns - 8 16 nC - 9 - - 12 - ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0336-Rev. B, 08-Apr-2019 Document Number: 76741 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA471DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 70 10000 100 VGS = 10 V thru 5 V 42 28 100 14 2 3 40 100 4 TC = -55 °C TC = 25 °C 10 0 10 0 1 1000 60 20 VGS = 3 V 0 TC = 125 °C 1st line 2nd line 1000 2nd line ID - Drain Current (A) 80 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 56 0 5 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 6 Axis Title 10000 0.060 10000 10 000 VGS = 4.5 V 100 0.020 VGS = 10 V Ciss 1000 1000 Coss 100 100 Crss 0.010 14 28 42 56 0 70 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title Axis Title 10000 1.5 ID = 12 A 8 1000 1st line 2nd line 6 VDS = 8 V, 15 V, 24 V 4 100 2 10 0 5 10 15 20 2nd line RDS(on) - On-Resistance (Normalized) 10 0 30 10000 VGS = 10 V, 10 A 1.3 1000 1.1 VGS = 4.5 V, 7 A 100 0.9 10 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S19-0336-Rev. B, 08-Apr-2019 1st line 2nd line 0 10 10 10 0 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 0.030 2nd line C - Capacitance (pF) 1000 0.040 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.050 Document Number: 76741 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA471DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.06 10000 100 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 1000 0.04 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A TJ = 125 °C 0.02 100 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 2.0 10000 30 ID = 250 μA 20 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) 25 1.7 1.4 15 10 100 1.1 5 0 0.001 10 0.8 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Junction Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 10000 10 100 μs 1000 1 ms Limited by RDS(on) a 1 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 100 ms 100 10 s, 1 s 0.1 DC TA = 25 °C, single pulse BVDSS limited 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S19-0336-Rev. B, 08-Apr-2019 Document Number: 76741 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA471DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 35 1000 21 1st line 2nd line 2nd line ID - Drain Current (A) 28 14 100 7 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating a Axis Title 24 10000 2.20 1.76 12 Power (W) 1000 1st line 2nd line 2nd line Power (W) 18 1.32 0.88 100 6 0.44 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line Power, Junction-to-Case 150 0.00 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0336-Rev. B, 08-Apr-2019 Document Number: 76741 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA471DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single P ulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76741. S19-0336-Rev. B, 08-Apr-2019 Document Number: 76741 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000