SIA477EDJ-T1-GE3

SiA477EDJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) - 12 0.0140 at VGS = - 4.5 V 0.0160 at VGS = - 3.7 V 0.0190 at VGS = - 2.5 V 0.0330 at VGS = - 1.8 V - 12 - 12 - 12 - 12 34.7 nC PowerPAK SC-70-6L-Single 1 D 2 APPLICATIONS • Portable Devices such as D 3 G D 6 5 2.05 mm S S Smart Phones, Tablet PCs and Mobile Computing - Battery Switch - Load Switch - Power Management S D • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 3800 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 2.05 mm 4 Marking Code G BX X Part # code XXX Lot Traceability and Date code D Ordering Information: SiA477EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) ID IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Limit - 12 ±8 - 12a - 12a - 12a,b, c - 10.6b, c - 40 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA477EDJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea - 0.4 -1 VDS = 0 V, VGS = ± 8 V ± 30 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 12 V, VGS = 0 V -1 VDS - 5 V, VGS = - 4.5 V gfs mV/°C 2.9 VDS = - 12 V, VGS = 0 V, TJ = 55 °C RDS(on) Forward Transconductancea -4 ID = - 250 µA VDS = VGS, ID = - 250 µA V V µA - 10 - 20 A VGS = - 4.5 V, ID = - 7 A 0.0116 0.0140 VGS = - 3.7 V, ID = - 5 A 0.0130 0.0160 VGS = - 2.5 V, ID = - 3 A 0.0158 0.0190 VGS = - 1.8 V, ID = - 1 A 0.0250 0.0330 VDS = - 6 V, ID = - 7 A 31  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2970 VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = - 6 V, VGS = - 8 V, ID = - 13.3 A Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 6 V, VGS = - 4.5 V, ID = - 13.3 A 1 VDD = - 6 V, RL = 0.6  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 30 45 28 42 74 111 45 68 10 20 VDD = - 6 V, RL = 0.6  ID  - 10 A, VGEN = - 8 V, Rg = 1  tf Fall Time 10 tf td(off) Turn-Off Delay Time 5 td(on) tr Rise Time 87 52 nC 7.8 f = 1 MHz tr Rise Time 58 34.7 5.5 td(on) Turn-On Delay Time pF 724 Qg Gate-Source Charge 710 9 18 80 120 40 60  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 12 - 40 IS = - 10 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 18 27 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 11 7 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA477EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.E-02 0.020 TJ = 25 °C 1.E-03 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.015 0.010 0.005 1.E-04 TJ = 150 °C 1.E-05 1.E-06 TJ = 25 °C 1.E-07 1.E-08 1.E-09 0.000 0 3 6 9 0 12 VGS - Gate-Source Voltage (V) 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 0.5 40 VGS = 8 V thru 3 V VGS = 2.5 V 0.4 VGS = 2 V ID - Drain Current (A) ID - Drain Current (A) 30 VGS =1.8 V 20 0.3 TC = 25 °C 0.2 10 0.1 TC = 125 °C TC = - 55 °C 0 0 0 0.5 1 1.5 0 2 VDS - Drain-to-Source Voltage (V) 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4500 0.040 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3600 VGS = 1.8 V VGS = 2.5 V 0.020 VGS = 3.7 V Ciss 2700 1800 VGS = 4.5 V 900 Crss Coss 0.000 0 0 10 20 30 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 40 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA477EDJ Vishay Siliconix 8 0.050 ID = 4.3 A 0.040 6 VDS = 6 V RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) ID = 13.3 A VDS = 3 V 4 VDS = 9.6 V 2 0.030 0.020 TJ = 125 °C TJ = 25 °C 0.010 0 0.000 0 15 30 45 60 1 2 3 4 Gate Charge On-Resistance vs. Gate-to-Source Voltage 1.5 0.8 ID = 250 μA VGS = 4.5 V, ID = 7 A 0.65 1.3 VGS(th) (V) RDS(on) - On-Resistance (Normalized) 5 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 1.1 0.5 0.35 0.9 VGS = 3.7 V ID = 5 A 0.7 - 50 - 25 0 25 0.2 50 75 100 125 - 50 150 - 25 TJ - Junction Temperature (°C) 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 100 30 TJ = 150 °C 10 20 Power (W) IS - Source Current (A) 25 TJ = 25 °C 1 15 10 5 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1 10 100 1000 Time (s) Single Pulse Power, Junction to Ambient For technical questions, contact: pmostechsupport@vishay.com Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA477EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 μs ID - Drain Current (A) 10 Limited by RDS(on)* 1 ms 10 ms 1 100 ms 10s, 1 s DC 0.1 TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 35 20 Power Dissipation (W) ID - Drain Current (A) 28 21 Package Limited 14 15 10 5 7 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA477EDJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62798 www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 62798 S12-3080-Rev. A, 24-Dec-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000