SiA477EDJT
www.vishay.com
Vishay Siliconix
P-Channel 12 V (D-S) MOSFET
FEATURES
Thin PowerPAK® SC-70-6L Single
S
4
D
6
D
5
0.6 mm
05
2.
S
7
m
m
1
3
G
m
5m
2.0
Top View
2
D
1
D
Bottom View
Marking code: B7
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. (Ω) at VGS = -4,5 V
RDS(on) max. (Ω) at VGS = -3.7 V
RDS(on) max. (Ω) at VGS = -2.5 V
RDS(on) max. (Ω) at VGS = -1.8 V
Qg typ. (nC)
ID (A)
Configuration
• TrenchFET® Gen III p-channel power MOSFET
• Thermally enhanced PowerPAK® SC-70 package
- Small footprint area
- Low on-resistance
• 100 % Rg tested
• RDS(on) rating at VGS = -1.8 V
• Built in ESD protection with Zener diode
• Typical ESD performance: 3500 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
S
• Smart phones, tablet PCs, mobile
computing
- Battery switch
- Charger switch
- Load switch
-12
0.0130
0.0145
0.0190
0.0320
33
-12
Single
G
P-Channel MOSFET
D
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Thin PowerPAK SC-70-6L
SiA477EDJT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Maximum power dissipation
SYMBOL
LIMIT
VDS
VGS
-12
±8
-12 a
-12 a
-12 a, b, c
-11 b, c
-50
-12 a
-2.9 b, c
19
12
3.5 b, c
2.2 b, c
-55 to +150
260
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
IS
PD
TJ, Tstg
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
Maximum junction-to-ambient b, f
t≤5s
RthJA
28
36
Maximum junction-to-case (drain)
Steady state
RthJC
5.3
6.5
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S21-1096-Rev. B, 15-Nov-2021
Document Number: 77703
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA477EDJT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-12
-
-
V
-
-3.9
-
-
2.5
-
VDS = VGS, ID = -250 μA
-0.4
-
-1
VDS = 0 V, VGS = ± 8 V
-
-
± 12
VDS = 0 V, VGS = ± 4.5 V
-
-
±1
VDS = -12 V, VGS = 0 V
-
-
-1
VDS = -12 V, VGS = 0 V, TJ = 55 °C
-
-
-10
VDS ≤ -5 V, VGS = -4.5 V
-20
-
-
VGS = -4.5 V, ID = -5 A
-
0.0110
0.0130
VGS = -3.7 V, ID = -5 A
-
0.0114
0.0145
VGS = -2.5 V, ID = -3 A
-
0.0145
0.0190
VGS = -1.8 V, ID = -1 A
-
0.0228
0.0320
VDS = -6 V, ID = -5 A
-
30
-
-
3050
-
-
725
-
-
740
-
Static
Drain-source breakdown voltage
ΔVDS/TJ
VDS temperature coefficient
VGS(th) temperature coefficient
ΔVGS(th)/TJ
Gate-source threshold voltage
VGS(th)
Gate-source leakage
IGSS
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance a
Forward transconductance a
IDSS
ID(on)
RDS(on)
gfs
ID = -250 μA
mV/°C
V
μA
A
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -6 V, VGS = 0 V, f = 1 MHz
VDS = -6 V, VGS = -10 V, ID = -10 A
-
55
83
-
33
50
VDS = -6 V, VGS = -4.5 V, ID = -10 A
-
4.3
-
-
8.9
-
f = 1 MHz
1.2
6
12
-
25
50
-
25
50
-
70
140
tf
-
50
100
td(on)
-
10
20
-
20
40
-
90
180
-
46
90
td(on)
tr
td(off)
tr
td(off)
VDD = -6 V, RL = 1 Ω
ID ≅ -10 A, VGEN = -4.5 V, Rg = 1 Ω
VDD = -10 V, RL = 1 Ω
ID ≅ -10 A, VGEN = -8 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = -10 A, VGS = 0 V
IF = -10 A, di/dt = 100 A/μs,
TJ = 25 °C
-
-
-12
-
-
-50
-
-0.8
-1.2
V
-
60
120
ns
-
39
80
nC
-
22
-
-
38
-
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1096-Rev. B, 15-Nov-2021
Document Number: 77703
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA477EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
15.0
10-2
10000
6.0
I
100
1000
10-5
10-6
1st line
2nd line
TJ = 25 °C
TJ = 150 °C
10-4
TJ = 25 °C
10-7
GSS
9.0
2nd line
- Gate Current (A)
1000
1st line
2nd line
2nd line
IGSS - Gate Current (mA)
10-3
12.0
100
10-8
3.0
10-9
10-10
10
0
0
2
4
6
8
10
12
14
10
0
16
2
4
6
8
10
12
14
16
VGS - Gate-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
Axis Title
Axis Title
50
50
10000
10000
VGS = 5 V thru 2.5 V
20
100
10
1000
30
1st line
2nd line
1000
VGS = 2 V
30
2nd line
ID - Drain Current (A)
40
1st line
2nd line
2nd line
ID - Drain Current (A)
40
20
100
TC = 25 °C
10
VGS = 1.5 V
TC = -55 °C
TC = 125 °C
0
0
10
0
1
2
3
4
5
10
0
0.5
1
2
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
2.5
Axis Title
Axis Title
5000
10000
0.04
10000
0.02
1000
VGS = 3.7 V
VGS = 2.5 V
100
0.01
0
10
10
20
30
40
50
1000
Coss
2000
100
Crss
1000
VGS = 4.5 V
0
Ciss
3000
1st line
2nd line
VGS = 1.8 V
2nd line
C - Capacitance (pF)
4000
0.03
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
1.5
0
10
0
2
4
6
8
10
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
S21-1096-Rev. B, 15-Nov-2021
12
Document Number: 77703
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA477EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
VDS = 6 V
4
VDS = 3 V
100
2
VDS = 9.6 V
0
10
0
10
20
30
40
50
10000
ID = 5 A
1.4
VGS = 4.5 V; 3.7 V
1.3
VGS = 2.5 V
1000
1.2
1.1
1st line
2nd line
6
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 10 A
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
1.5
10000
8
VGS = 1.8 V
1.0
100
0.9
0.8
0.7
10
-50
60
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
Axis Title
Axis Title
100
10000
0.06
10000
1
100
0.1
0.04
0.02
0.2
0.4
0.6
0.8
1.0
100
TJ = 150 °C
TJ = 25 °C
10
0
1000
1st line
2nd line
1000
TJ = 25 °C
2nd line
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
1st line
2nd line
2nd line
IS - Source Current (A)
ID = 5 A
0
0
1.2
1
2
3
4
5
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
10000
0.8
30
1000
0.6
0.5
0.4
ID = 250 μA
100
0.3
Power (W)
25
1st line
2nd line
2nd line
VGS(th) (V)
0.7
20
15
10
5
0.2
10
-50
-25
0
25
50
75
100 125 150
TJ - Temperature (°C)
2nd line
Threshold Voltage
S21-1096-Rev. B, 15-Nov-2021
0
0.001
0.01
0.1
1
10
Time (s)
100
1000
Single Pulse Power, Junction-to-Ambient
Document Number: 77703
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA477EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
100
10000
IDM limited
Limited by RDS(on) (1)
100 μs
2nd line
ID - Drain Current (A)
10
1000
1
1st line
2nd line
1 ms
ID limited
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single pulse
100
BVDSS limited
0.01
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Axis Title
20
10000
35
1000
20
15
100
Package limited
10
Power Dissipation (W)
25
1st line
2nd line
2nd line
ID - Drain Current (A)
30
15
10
5
5
0
10
0
25
50
75
100
TC - Case Temperature (°C)
2nd line
Current Derating a
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-1096-Rev. B, 15-Nov-2021
Document Number: 77703
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA477EDJT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = R thJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single pulse
0.01
10-4
10-3
4. Surface mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77703.
S21-1096-Rev. B, 15-Nov-2021
Document Number: 77703
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® SC70T
D
A
b
e
PIN3
PIN1
T
L
PIN3
K
E2
E2
D3
D2
b
PIN2
D2
D2
K
K E4 E3 K4 L
PIN2
E
PIN1
E2
e
Terminal #1
Topside View
PIN6
PIN6
PIN4
PIN5
K1
K2
C
PIN4
K2
K1
Backside View of Single
A
PIN5
K2
A1
K3
Backside View of Dual
Z
Detail Z
Z
Side View
SINGLE PAD
DIM.
MIN.
0.525
0
0.23
0.15
1.98
0.85
0.135
1.98
1.40
0.345
0.425
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.95
1.05
0.235
0.335
2.05
2.15
1.50
1.60
0.395
0.445
0.475
0.525
0.65 BSC
0.275 TYP.
0.400 TYP.
0.240 TYP.
0.225 TYP.
0.355 TYP.
0.275
0.375
A
A1
b
C
D
D2
D3
E
E2
E3
E4
e
K
K1
K2
K3
K4
L
0.175
T
ECN: C12-0160-Rev. B, 05-Mar-12
DWG: 5994
INCHES
MIN.
NOM.
0.0206
0.024
0
0.009
0.012
0.006
0.008
0.078
0.081
0.033
0.037
0.005
0.009
0.078
0.081
0.055
0.059
0.014
0.016
0.017
0.019
0.026 BSC
0.011 TYP.
0.016 TYP.
0.009 TYP.
0.009 TYP.
0.014 TYP.
0.007
0.011
DUAL PAD
MAX.
0.026
0.002
0.015
0.010
0.085
0.041
0.013
0.085
0.063
0.018
0.021
MIN.
0.525
0
0.23
0.15
1.98
0.513
1.98
0.85
MILLIMETERS
NOM.
MAX.
0.60
0.65
0.05
0.30
0.38
0.20
0.25
2.05
2.15
0.613
0.713
2.05
0.95
2.15
1.05
MIN.
0.0206
0
0.009
0.006
0.078
0.020
INCHES
NOM.
0.024
0.012
0.008
0.081
0.024
MAX.
0.026
0.002
0.015
0.010
0.085
0.028
0.078
0.033
0.081
0.037
0.085
0.041
0.65 BSC
0.275 TYP.
0.320 TYP.
0.252 TYP.
0.015
0.175
0.05
0.275
0.10
0.026 BSC
0.011 TYP.
0.013 TYP.
0.010 TYP.
0.375
0.15
0.007
0.002
0.011
0.004
0.015
0.006
Notes
1. All dimensions are in millimeter. Millimeters will govern.
2. Package outline exculsive of mold flash and metal burr.
3. Package outline inclusive of plating
Revision: 05-Mar-12
1
Document Number: 65370
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
0.045
(1.143)
(0.648)
0.022
(0.559)
0.026
0.025
(0.622)
(2.438)
0.096
RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead
0.027
(0.686)
0.071
(1.803)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72601
Revision: 21-Jan-08
www.vishay.com
17
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
