SIA533EDJ-T1-GE3

SiA533EDJ www.vishay.com Vishay Siliconix N- and P-Channel 12 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Dual S2 4 • TrenchFET® power MOSFETs D1 6 G2 5 • Typical ESD protection: n-channel 1500 V, p-channel 1000 V D1 • 100 % Rg tested D2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 05 2. m m m 5m 2.0 Top View 3 D2 Bottom View 1 1 S1 2 G1 APPLICATIONS • Load switch for portable devices • DC/DC converters Marking code: EH D1 PRODUCT SUMMARY N-CHANNEL P-CHANNEL 12 -12 RDS(on) () at VGS = ± 4.5 V 0.034 0.059 RDS(on) () at VGS = ± 2.5 V 0.040 0.081 RDS(on) () at VGS = ± 1.8 V 0.050 0.115 RDS(on) () at VGS = ± 1.5 V 0.070 0.215 Qg typ. (nC) 5.6 7.8 ID (A) a 4.5 VDS (V) Configuration S2 G1 G2 S1 D2 N-Channel MOSFET -4.5 P-Channel MOSFET N- and p-pair ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA533EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage VDS 12 -12 Gate-source voltage VGS ±8 ±8 4.5 a -4.5 a 4.5 a -4.5 a TC = 25 °C TC = 70 °C Continuous drain current (TJ = 150 °C) TA = 25 °C ID IDM Source-drain current diode current 20 -15 -4.5 a 1.6 b, c -1.6 b, c TC = 25 °C 7.8 7.8 TC = 70 °C 5 5 1.9 b, c 1.9 b, c 1.2 b, c 1.2 b, c TA = 25 °C Maximum power dissipation TA = 25 °C IS PD TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) S10-0214-Rev. A, 25-Jan-10 d, e -3.7 b ,c 4.5 a TC = 25 °C TJ, Tstg V -4.5 a, b, c 4.5 a, b, c TA = 70 °C Pulsed drain current 4.5 a, b, c UNIT -55 to +150 260 A W °C Document Number: 65706 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL TYP. TYP. MAX. UNIT MAX. Maximum junction-to-ambient b, f t5s RthJA 52 65 52 65 Maximum junction-to-case (drain) Steady state RthJC 12.5 16 12.5 16 °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate threshold voltage VDS VDS/TJ VGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 μA N-Ch 12 - - VGS = 0 V, ID = -250 μA P-Ch -12 - - ID = 250 μA N-Ch - 19 - ID = -250 μA P-Ch - -5.7 - ID = 250 μA N-Ch - -2.7 - ID = -250 μA P-Ch - 1.7 - VDS = VGS, ID = 250 μA N-Ch 0.4 - 1 VDS = VGS, ID = -250 μA P-Ch -0.4 - -1 N-Ch - - ± 0.5 P-Ch - - ± 0.5 N-Ch - - ±5 P-Ch - - ±5 N-Ch - - 1 VDS = 0 V, VGS = ± 4.5 V Gate-body leakage IGSS VDS = 0 V, VGS = ± 8 V VDS = 12 V, VGS = 0 V Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b S10-0214-Rev. A, 25-Jan-10 IDSS ID(on) RDS(on) gfs VDS = -12 V, VGS = 0 V P-Ch - - -1 VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 -10 VDS = -12 V, VGS = 0 V, TJ = 55 °C P-Ch - - VDS  5 V, VGS = 4.5 V N-Ch 10 - - VDS  -5 V, VGS = -4.5 V P-Ch -10 - - VGS = 4.5 V, ID = 4.6 A N-Ch - 0.028 0.034 VGS = -4.5 V, ID = -3.6 A P-Ch - 0.048 0.059 VGS = 2.5 V, ID = 4.2 A N-Ch - 0.032 0.040 VGS = -2.5 V, ID = -3.1 A P-Ch - 0.066 0.081 VGS = 1.8 V, ID = 3.8 A N-Ch - 0.038 0.050 VGS = -1.8 V, ID = -2.6 A P-Ch - 0.093 0.115 VGS = 1.5 V, ID = 1.5 A N-Ch - 0.045 0.070 VGS = -1.5 V, ID = -0.5 A P-Ch - 0.120 0.215 VDS = 6 V, ID = 4.6 A N-Ch - 21 - VDS = -6 V, ID = -3.6 A P-Ch - 11 - V mV/°C V μA A  S Document Number: 65706 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Dynamic a SYMBOL Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall Time Rg td(on) tr td(off) tf td(on) tr td(off) tf TEST CONDITIONS N-channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-channel VDS = -6 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 5.9 A VDS = -10 V, VGS = -10 V, ID = -4.7 A VDS = 10 V, VGS = 4.5 V, ID = 5.9 A VDS = -10 V, VGS = -4.5 V, ID = -4.7 A N-channel VDS = 10 V, VGS = 4.5 V, ID = 5.9 A P-channel VDS = -10 V, VGS = -4.5 V, ID = -4.7 A f = 1 MHz N-channel VDD = 6 V, RL = 1.3 , ID  4.8 A, VGEN = 4.5 V, Rg = 1  P-channel VDD = -6 V, RL = 1.6 , ID  -3.7 A, VGEN = -4.5 V, Rg = 1  N-channel VDD = 6 V, RL = 1.3 , ID  4.8 A, VGEN = 8 V, Rg = 1  P-channel VDD = -6 V, RL = 1.6 , ID  -3.7 A, VGEN = -8 V, Rg = 1  N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch MIN. TYP. MAX. - 420 545 100 192 62 175 10 13 5.6 7.8 0.7 1.3 0.85 15 20 8.5 12 - P-Ch - 2.3 - N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.7 1.4 - 3.5 7 10 15 10 15 20 25 10 10 5 5 10 10 20 25 10 10 7 14 15 25 15 25 30 40 15 15 10 10 15 15 30 40 15 15 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch - 0.85 -0.87 10 25 5 10 5.5 17 4.5 8 4.5 -4.5 20 -15 1.2 -1.2 20 50 10 20 - UNIT pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4.8 A, VGS = 0 V IS = -3.7 A, VGS = 0 V N-channel IF = 4.4 A, di/dt = 100 A/μs, TJ = 25 °C P-channel IF = -3.7 A, di/dt = -100 A/μs, TJ = 25 °C A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width  300 μs, duty cycle  2 %  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S10-0214-Rev. A, 25-Jan-10 Document Number: 65706 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 2.5 10-3 I GSS - Gate Current (A) 2.0 I G - Gate Current (mA) TJ = 25 °C 1.5 1.0 0.5 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 10-8 10-9 10-10 0 0 3 6 9 12 0 15 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 15 10 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 1.5 V 8 4 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.08 800 VGS = 1.5 V 600 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.07 0.05 VGS = 1.8 V 0.04 VGS = 2.5 V 0.03 Ciss 400 Coss 200 VGS = 4.5 V 0.02 Crss 0 0.01 0 4 8 12 16 20 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S10-0214-Rev. A, 25-Jan-10 12 Document Number: 65706 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 1.6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) ID = 5.9 A 6 VDS = 6 V 4 VDS = 3 V VDS = 9.6 V 2 0 0 2 4 6 8 VGS = 1.5 V, ID = 1.5 A 1.4 VGS = 1.8 V, 2.5 V, 4.5 V, ID = 4.6 A 1.2 1.0 0.8 0.6 - 50 10 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.08 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.6 A, 125 °C 10 TJ = 150 °C TJ = 25 °C 1 ID = 1.5 A, 125 °C 0.06 ID = 1.5 A, 25 °C 0.04 ID = 4.6 A, 25 °C 0.02 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) ID - Drain Current (A) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.8 ID = 250 µA 0.7 15 Power (W) VGS(th) (V) 0.6 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S10-0214-Rev. A, 25-Jan-10 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 65706 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 10 ms 1 1 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S10-0214-Rev. A, 25-Jan-10 Document Number: 65706 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110°C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S10-0214-Rev. A, 25-Jan-10 Document Number: 65706 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 10-1 10-2 2.5 Ig - Gate Current (mA) Ig - Gate Current (mA) 10-3 2.0 1.5 1.0 TJ = 25 °C TJ = 150 °C 10-4 10-5 TJ = 25 °C 10-6 10-7 10-8 0.5 10-9 0.0 0.0 4.0 8.0 12.0 10-10 0.0 16.0 4.0 VGS - Gate-to-Source Voltage (V) 8.0 12.0 16.0 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 10 VGS = 5 V thru 2 V 8 9 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 2 V 6 VGS = 1.5 V 6 TC = 125 °C 4 TC = 25 °C 3 2 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1000 0.20 VGS = 1.5 V VGS = 1.8 V 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.16 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 Ciss 600 400 Coss 200 Crss 0.00 0 3 6 9 12 15 0 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S10-0214-Rev. A, 25-Jan-10 12 Document Number: 65706 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.7 A 6 VDS = 6 V 4 VDS = 3 V VDS = 9.6 V 2 0 0 3 6 9 12 1.4 VGS = 2.5 V, 4.5 V, ID = 3.6 A 1.3 1.2 VGS = 1.5 V, 1.8 V ID = 1 A 1.1 1.0 0.9 0.8 0.7 - 50 15 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.20 100 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.6 A, 125 °C 10 TJ = 150 °C TJ = 25 °C 1 ID = 3.6 A, 25 °C 0.16 0.12 0.08 ID = 1 A, 125 °C 0.04 0.00 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0 VSD - Source-to-Drain Voltage (V) 2.0 ID = 1 A, 25 °C 3.0 4.0 5.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.85 20 0.80 ID = 250 μA 0.75 15 Power (W) VGS(th) (V) 0.70 0.65 0.60 0.55 10 5 0.50 0.45 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Threshold Voltage S10-0214-Rev. A, 25-Jan-10 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) Document Number: 65706 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 Power Dissipation (W) ID - Drain Current (A) 10 8 6 4 Package Limited 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S10-0214-Rev. A, 25-Jan-10 Document Number: 65706 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA533EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65706. S10-0214-Rev. A, 25-Jan-10 Document Number: 65706 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000