SIA537EDJ-T1-GE3

SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Dual S2 4 • TrenchFET® power MOSFETs D1 6 G2 5 • Typical ESD protection: N-channel 2400 V, P-channel 2000 V D1 • 100 % Rg tested D2 05 2. m m m 5m 2.0 Top View 3 D2 Bottom View 1 1 S1 2 G1 PRODUCT SUMMARY VDS (V) 12 -20 0.028 0.054 RDS(on) (Ω) at VGS = ± 2.5 V 0.033 0.070 RDS(on) (Ω) at VGS = ± 1.8 V 0.042 0.104 - 0.165 Qg typ. (nC) 6.2 9.5 ID (A) a 4.5 -4.5 Configuration D1 P-CHANNEL RDS(on) (Ω) at VGS = ± 4.5 V RDS(on) (Ω) at VGS = -1.5 V APPLICATIONS • Portable devices such as smart phones, tablet PCs and mobile computing - Load switches - Power management - DC/DC converters Marking code: EK N-CHANNEL • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S2 G1 G2 D2 S1 N- and p-pair N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA537EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage VDS 12 -20 Gate-source voltage VGS ±8 ±8 TC = 25 °C 4.5 a -4.5 a TC = 70 °C a -4.5 a a, b, c -4.5 a, b, c 4.5 a, b, c -4.5 a, b, c Continuous drain current (TJ = 150 °C) TA = 25 °C ID TA = 70 °C Pulsed drain current (t = 100 μs) IDM 20 -15 -4.5 a 1.6 b, c -1.6 b, c TC = 25 °C 7.8 7.8 TC = 70 °C 5 5 TA = 25 °C Maximum power dissipation TA = 25 °C IS PD TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) S13-2635-Rev. A, 30-Dec-13 d, e 4.5 4.5 a TC = 25 °C Source drain current diode current 4.5 TJ, Tstg b, c 1.9 b, c 1.2 b, c 1.2 b, c 1.9 -55 to +150 260 UNIT V A W °C Document Number: 62934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL TYP. TYP. MAX. UNIT MAX. Maximum junction-to-ambient b, f t≤5s RthJA 52 65 52 65 Maximum junction-to-case (drain) Steady state RthJC 12.5 16 12.5 16 °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS ΔVDS/TJ VDS temperature coefficient ΔVGS(th)/TJ VGS(th) temperature coefficient Gate threshold voltage VGS(th) VGS = 0 V, ID = 250 μA N-Ch 12 - - VGS = 0 V, ID = -250 μA P-Ch -20 - - ID = 250 μA N-Ch - 8 - ID = -250 μA P-Ch - -15 - ID = 250 μA N-Ch - -2.5 - ID = -250 μA P-Ch - 2.5 - VDS = VGS, ID = 250 μA N-Ch 0.4 - 1 VDS = VGS, ID = -250 μA P-Ch -0.4 - -1 N-Ch - - ± 0.5 P-Ch - - ±3 N-Ch - - ±5 P-Ch - - ± 30 N-Ch - - 1 VDS = 0 V, VGS = ± 4.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V VDS = 12 V, VGS = 0 V Zero gate voltage drain current IDSS On-state drain current b Drain-source on-state resistance Forward transconductance b S13-2635-Rev. A, 30-Dec-13 ID(on) b RDS(on) gfs VDS = -20 V, VGS = 0 V P-Ch - - -1 VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 VDS = -20 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10 VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 - - VDS ≤ -5 V, VGS = -4.5 V P-Ch -10 - - VGS = 4.5 V, ID = 5.2 A N-Ch - 0.023 0.028 VGS = -4.5 V, ID = -3.8 A P-Ch - 0.044 0.054 VGS = 2.5 V, ID = 4.8 A N-Ch - 0.027 0.033 VGS = -2.5 V, ID = -3.3 A P-Ch - 0.057 0.070 VGS = 1.8 V, ID = 2.5 A N-Ch - 0.035 0.042 VGS = -1.8 V, ID = -1 A P-Ch - 0.075 0.104 VGS = -1.5 V, ID = -0.5 A P-Ch - 0.097 0.165 VDS = 6 V, ID = 5.2 A N-Ch - 23 - VDS = -6 V, ID = -3.6 A P-Ch - 11 - V mV/°C V μA A Ω S Document Number: 62934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 1 - 455 770 190 90 150 81 10.5 16.3 6.2 9.5 0.8 1.4 1.6 2.3 4 5.1 10 15 12 15 25 30 12 10 5 7 10 12 20 25 10 10 16 25 9.5 14.5 8 10 15 25 20 25 40 45 20 15 10 16 15 20 30 40 15 15 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch - 0.8 -0.9 25 13 10 5.5 13 7.5 12 5.5 4.5 -4.5 20 -15 1.2 -1.2 50 25 20 12 - UNIT Dynamic a Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Total gate charge Crss Qg N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = 6 V, VGS = 8 V, ID = 6.8 A VDS = -10 V, VGS = -8 V, ID = -4.9 A N-Channel VDS = 6 V, VGS = 4.5 V, ID = 6.8 A Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf td(on) tr td(off) tf P-Channel VDS = -10 V, VGS = -4.5 V, ID = -4.9 A f = 1 MHz N-Channel VDD = 6 V, RL = 1.1 Ω ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = -10 V, RL = 2.6 Ω ID ≅ -3.9 A, VGEN = -4.5 V, Rg = 1 Ω N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 5.4 A, VGEN = 8 V, Rg = 1 Ω P-Channel VDD = -10 V, RL = 2.6 Ω ID ≅ -3.9 A, VGEN = -8 V, Rg = 1 Ω pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 4.8 A, VGS = 0 V IS = -3.9 A, VGS = 0 V N-Channel IF = 5.4 A, di/dt = 100 A/μs, TJ = 25 °C P-Channel IF = -3.9 A, di/dt = -100 A/μs, TJ = 25 °C A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 10-2 10-3 3 I GSS - Gate Current (A) I GSS - Gate Current (mA) TJ = 25 °C 2 1 10-4 10-5 10-6 TJ = 150 °C 10-7 10-8 TJ = 25 °C 10-9 10-10 0 0 3 6 9 12 0 15 3 VGS - Gate-to-Source Voltage (V) 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 10 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 1.5 V 12 8 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 0.3 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 800 0.08 600 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TC = - 55 °C 0 0.0 3.0 Ciss 400 Coss Crss 200 0 0.00 0 5 10 15 ID - Drain Current (A) 20 On-Resistance vs. Drain Current and Gate Voltage S13-2635-Rev. A, 30-Dec-13 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62934 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 ID = 6.8 A R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 6 VDS = 6 V 4 VDS = 9.6 V VDS = 3 V 2 4 8 Qg - Total Gate Charge (nC) VGS = 1.8 V; ID = 2.5 A 1.3 1.2 1.1 VGS = 4.5 V, 2.5 V; ID = 5.5 A 1.0 0.9 0.8 0.7 - 50 0 0 1.4 12 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 100 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0 TJ - Junction Temperature (°C) Gate Charge 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 - 25 ID = 2.5 A; TJ = 125 °C 0.06 ID = 5.2 A; TJ = 125 °C 0.04 ID = 2.5 A; TJ = 25 °C ID = 5.2 A; TJ = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 5 20 0.7 15 ID = 250 µA Power (W) VGS(th) (V) 0.6 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S13-2635-Rev. A, 30-Dec-13 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) Document Number: 62934 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 I D - Drain Current (A) Limited by RDS(on)* Limited by IDM 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 10-1 10-2 40 IG - Gate Current (A) IG - Gate Current (mA) 10-3 30 TJ = 25 °C 20 TJ = 150 °C 10-4 10-5 TJ = 25 °C 10-6 10-7 10 10-8 10-9 0 0 3 6 9 12 0 15 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 5 15 V GS = 5 V thru 2.5 V V GS = 2 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 6 V GS = 1.5 V 3 3 2 T C = 25 °C 1 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1.5 1500 V GS = 1.5 V 0.16 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0.0 3.0 0.12 V GS = 1.8 V 0.08 V GS = 2.5 V 0.04 900 Ciss 600 300 V GS = 4.5 V Coss Crss 0 0 0 3 6 9 12 15 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S13-2635-Rev. A, 30-Dec-13 20 Document Number: 62934 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.9 A V DS = 10 V 6 V DS = 5 V V DS = 16 V 4 2 3 6 9 12 15 V GS = 2.5 V; 4.5 V; I D = 3.8 A 1.3 V GS = 1.8 V; I D = 1 A 1.2 1.1 V GS = 1.5 V; I D = 0.5 A 1.0 0.9 0.8 0.7 - 50 0 0 1.4 18 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 0.18 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.15 T J = 150 °C 10 T J = 25 °C 1 ID = 3.8 A; T J = 25 °C 0.12 ID = 1 A; T J = 125 °C ID = 3.8 A; T J = 125 °C 0.09 0.06 ID = 1 A; T J = 25 °C 0.03 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.75 20 0.65 0.55 Power (W) VGS(th) (V) 15 ID = 250 μA 0.45 5 0.35 0.25 - 50 10 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-2635-Rev. A, 30-Dec-13 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Document Number: 62934 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on) * Limited by IDM ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 10 Power Dissipation (W) ID - Drain Current (A) 6 8 6 Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max.= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA537EDJ www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62934. S13-2635-Rev. A, 30-Dec-13 Document Number: 62934 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000