SIA810DJ-T1-E3

New Product SiA810DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Qg (Typ.) 0.053 at VGS = 4.5 V ID (A)a 4.5 0.063 at VGS = 2.5 V 4.5 4.1 nC 0.077 at VGS = 1.8 V 4.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile • Low Vf Trench Schottky Diode SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 20 0.45 at 1 A 2 RoHS COMPLIANT APPLICATIONS • Load Switch for Portable Devices (MP3/Cellular) • Boost Converter PowerPAK SC-70-6 Dual D K Marking Code 1 A 2 NC GAX Part # code 3 D K XXX D 6 G Lot Traceability and Date code 0.75 mm K G 5 2.05 mm S 2.05 mm S 4 Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) A N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ±8 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C IS IF Average Forward Current (Schottky) IFM Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) Soldering Recommendations (Peak Temperature)d, e Document Number: 74957 S-80436-Rev. B, 03-Mar-08 3.8b, c 20 A 4.5a 1.6b, c 2b 5 6.5 5 1.9b, c PD 1.2b, c 6.8 TC = 70 °C 4.3 TA = 25 °C 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range 4.5a, b, c TA = 25 °C TC = 25 °C Maximum Power Dissipation (Schottky) 4.5a TC = 70 °C TA = 70 °C V 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit 20 TJ, Tstg 1.0b, c - 55 to 150 260 W °C www.vishay.com 1 New Product SiA810DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC RthJA RthJC t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g Maximum Junction-to-Case (Drain) (Schottky) Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. g. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 tr mV/°C - 2.8 0.4 1 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.7 A 20 0.053 VGS = 2.5 V, ID = 3.4 A 0.052 0.063 VGS = 1.8 V, ID = 1.1 A 0.062 0.077 VDS = 10 V, ID = 3.7 A 15 400 VDS = 10 V, VGS = 0 V, f = 1 MHz 70 pF 40 VDS = 10 V, VGS = 8 V, ID = 4.8 A 7 11.5 4.1 7 VDS = 10 V, VGS = 4.5 V, ID = 4.8 A 0.65 f = 1 MHz 2.5 5 VDD = 10 V, RL = 2.6 Ω ID ≅ 3.8 A, VGEN = 4.5 V, Rg = 1 Ω Ω 10 32 50 30 45 53 80 5 10 tf nC 0.8 tf tr Ω S td(on) td(off) µA A 0.043 td(on) td(off) V 1 VDD = 10 V, RL = 2.6 Ω ID ≅ 3.8 A, VGEN = 8 V, Rg = 1 Ω 12 20 15 25 10 15 ns Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 4.5 20 IS = 3.8 A, VGS = 0 V IF = 3.8 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 30 ns 8.5 20 nC 10 ns 5 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions IF = 1 A Min. Typ. Max. 0.41 0.45 IF = 1 A, TJ = 125 °C 0.36 0.41 Vr = 5 V 0.015 0.08 Vr = 5 V, TJ = 85 °C 0.50 5.00 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7 Vr = 20 V, TJ = 125 °C 5 50 Vr = 10 V 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 3 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 20 10 VGS = 5 thru 2.5 V 8 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 0.0 2.0 0.4 Output Characteristics 1.6 2.0 Transfer Characteristics 0.16 600 0.14 500 C - Capacitance (pF) VGS = 1.8 V 0.12 0.10 0.08 VGS = 2.5 V 0.06 Ciss 400 300 200 Coss 100 VGS = 4.5 V 0.04 Crss 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 ID = 4.8 A 1.5 VGS = 4.5 V, 2.5 V, 1.8 V, ID = 3.7 A 1.4 VDS = 10 V VDS = 16 V 4 2 1.3 (Normalized) 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.8 1.2 1.1 1.0 0.9 0.8 0 0 www.vishay.com 4 2 4 6 8 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 0.14 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.12 10 TJ = 150 °C TJ = 25 °C 1 0.10 ID = 3.7 A, 125 °C 0.08 0.06 0.04 ID = 3.7 A, 25 °C 0.1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 20 0.9 0.8 ID = 250 µA 15 0.6 Power (W) VGS(th) (V) 0.7 0.5 10 0.4 0.3 5 0.2 0.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by R DS(on)* I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 7 New Product SiA810DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I F - Reverse Current (mA) 10 1 20 V 0.1 5V 0.01 0.001 TJ = 150 °C 1 TJ = 25 °C 0.10 0.0001 0.00001 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.1 T J - Junction Temperature (°C) 0.2 0.3 0.4 0.5 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop CT - Junction Capacitance (pF) 300 240 180 120 60 0 0 4 8 12 16 20 VRS - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 74957 S-80436-Rev. B, 03-Mar-08 New Product SiA810DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74957. Document Number: 74957 S-80436-Rev. B, 03-Mar-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000