SIA817EDJ-T1-GE3

SiA817EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK® SC-70-6L Dual with Schottky Diode S 4 • LITTLE FOOT® plus Schottky power MOSFET K 6 G 5 • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance - Thin 0.75 mm profile K D 05 2. m m 1 2 3 NC D Bottom View m 5m 2.0 Top View 1 A • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Marking code: HE PRODUCT SUMMARY MOSFET VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -3.7 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) a SCHOTTKY VKA (V) VF (V) at 1 A IF (A) a Configuration • Typical ESD protection (MOSFET): 1500 V (HBM) APPLICATIONS • Portable devices such as smart phones, tablet PCs, and mobile computing - Battery charger switch - Buck converter - Power management -30 0.065 0.080 0.092 0.125 6.6 -4.5 S K D A G 30 0.56 2 Dual plus integrated Schottky P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA817EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage (MOSFET) Reverse voltage (Schottky) Gate-source voltage (MOSFET) Continuous drain current (TJ = 150 °C) (MOSFET) SYMBOL VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (MOSFET) (t = 300 μs) Continuous source-drain diode current (MOSFET diode conduction) IDM TC = 25 °C TA = 25 °C Average forward current (Schottky) Pulsed forward current (Schottky) Maximum power dissipation (MOSFET) Maximum power dissipation (Schottky) Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e S13-0196-Rev. A, 28-Jan-13 ID IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg LIMIT -30 30 ± 12 -4.5 a -4.5 a -4.2 b, c -3.4 b, c -15 -4.5 a -1.6 b, c 2b 3 6.5 5 1.9 b, c 1.2 b, c 6.8 4.3 1.6 b, c 1 b, c -55 to +150 260 UNIT V A W °C Document Number: 62820 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient (MOSFET) b, f t5s RthJA 52 65 Maximum junction-to-case (drain) (MOSFET) Steady state RthJC 12.5 16 Maximum junction-to-ambient (Schottky) b, f t5s RthJA 62 76 Maximum junction-to-case (drain) (Schottky) Steady state RthJC 15 18.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - V - -23 - - 2.7 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage VGS(th) Gate-source leakage IGSS Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs ID = -250 μA VDS = VGS, ID = -250 μA -0.6 - -1.3 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 VDS = 0 V, VGS = ± 12 V - - ± 10 VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  5 V, VGS = -10 V -8 - - VGS = -10 V, ID = -3 A - 0.054 0.065 VGS = -4.5 V, ID = -2 A - 0.065 0.080 VGS = -3.7 V, ID = -1 A - 0.070 0.092 VGS = -2.5 V, ID = -1 A - 0.095 0.125 VDS = -10 V, ID = -3 A - 9 - - 600 - - 55 - - 50 - - 14 23 mV/°C V μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time S13-0196-Rev. A, 28-Jan-13 VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -15 V, VGS = -10 V, ID = -4.2 A - 6.6 10 VDS = -5 V, VGS = -4.5 V, ID = -4.2 A - 1.3 - - 2 - f = 1 MHz 1.1 5.5 11 - 20 40 - 20 40 - 23 45 tf - 10 20 td(on) - 10 20 - 10 20 - 25 50 - 7 15 td(on) tr td(off) tr td(off) tf VDD = -15 V, RL = 4.4  ID  -3.4 A, VGEN = -4.5 V, Rg = 1  VDD = -15 V, RL = 4.4  ID  -3.4 A, VGEN = -10 V, Rg = 1  pF nC  ns Document Number: 62820 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT TC = 25 °C - - -4.5 - - -15 - -0.9 -1.2 V - 16 30 ns - 8 15 nC - 9 - - 7 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta IS = -3.4 A, VGS = 0 V IF = -3.4 A, di/dt = 100 A/μs, TJ = 25 °C Reverse recovery rise time tb Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing A ns SCHOTTKY SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Forward voltage drop SYMBOL VF Maximum reverse leakage current Irm Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. IF = 0.5 A - 0.37 0.45 IF = 0.5 A, TJ = 125 °C - 0.31 0.37 IF = 1 A - 0.46 0.56 IF = 1 A, TJ = 125 °C - 0.41 0.50 Vr = 30 V - 0.025 0.100 Vr = 30 V, TJ = 85 °C - 0.6 6 Vr = 15 V - 35 - UNIT V mA pF    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.6 10-2 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.2 TJ = 25 °C 0.8 0.4 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 10-8 0 0 3 6 9 12 VGS - Gate-Source Voltage (V) 15 10-9 18 0 6 9 12 15 VGS - Gate-to-Source Voltage (V) 18 Gate-Source Voltage vs. Gate Current Gate-Source Voltage vs. Gate Current 5 15 VGS = 10 V thru 4 V VGS = 3 V 4 ID - Drain Current (A) 12 ID - Drain Current (A) 3 9 6 VGS = 2 V 3 3 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 VDS - Drain-to-Source Voltage (V) 0.5 1.0 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.25 1.8 RDS(on) - On-Resistance (Normalized) VGS = 2.5 V 0.20 RDS(on) - On-Resistance (Ω) 2.0 0.15 VGS = 4.5 V 0.10 VGS = 3.7 V 0.05 VGS = 10 V 0 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage S13-0196-Rev. A, 28-Jan-13 1.6 ID = 3 A VGS = 10V, 4.5V, 3.7 V 1.4 VGS = 2.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62820 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 1000 800 IS - Source Current (A) C - Capacitance (pF) Ciss 600 400 10 TJ = 150 °C TJ = 25 °C 1 200 Coss Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 0.1 0.0 30 0.2 0.4 0.6 0.8 0.25 8 VDS = 15 V ID = 4.2 A ID = 3 A 0.20 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 1.2 Source-Drain Diode Forward Voltage Capacitance 6 VDS = 7.5 V 4 VDS = 24 V 2 0 1.0 VSD - Source-to-Drain Voltage (V) 0.15 0.10 TJ = 125 °C TJ = 25 °C 0.05 0 0 3 6 9 12 Qg - Total Gate Charge (nC) 15 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Gate Charge 1.1 20 1.0 15 Power (W) VGS(th) (V) 0.9 0.8 ID = 250 μA 10 0.7 5 0.6 0.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-0196-Rev. A, 28-Jan-13 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Document Number: 62820 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 1 ms 10 ms 100 ms 10 s 1s DC 0.1 TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 8 10 Power Dissipation (W) ID - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 100 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 VR = 30 V 10-1 VR = 10 V 10-2 10-3 1 TJ = 150 °C TJ = 25 °C 10-4 10-5 - 50 - 25 0 25 50 100 75 125 0.1 0.0 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 T J - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 0.8 0.9 1.0 C T - Junction Capacitance (pF) 250 200 150 100 50 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA817EDJ www.vishay.com Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62820. S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000