Work-In-Progress
SiA906EDJ
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Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PowerPAK® SC-70-6L Dual
S2
4
• TrenchFET® power MOSFET
D1
6
G2
5
• New thermally enhanced PowerPAK®
SC-70 package
- Small footprint area
- Low on-resistance
• Typical ESD protection 560 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D1
D2
05
2.
m
m
m
5m
2.0
Top View
1
3
D2
Bottom View
2
G1
1
S1
APPLICATIONS
• Load switch for portable applications
• High frequency DC/DC converter
Marking code: CC
D2
D1
PRODUCT SUMMARY
VDS (V)
20
RDS(on) max. () at VGS = 4.5 V
0.046
RDS(on) max. () at VGS = 2.5 V
0.063
Qg typ. (nC)
ID (A)
a
Configuration
G2
G1
3.5
4.5
Dual
N-Channel MOSFET
N-Channel MOSFET
S1
S2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SC-70
SiA906EDJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
Pulsed drain current
LIMIT
20
± 12
4.5 a
4.5 a
4.5 a, b, c
4.1 b, c
15
4.5 a
1.6 b, c
7.8
5
1.9 b, c
1.2 b, c
-55 to +150
260
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d, e
Continuous source-drain diode current
IS
PD
TJ, Tstg
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b, f
Maximum junction-to-case (drain)
t5s
Steady state
SYMBOL
RthJA
RthJC
TYPICAL
52
12.5
MAXIMUM
65
16
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 110 °C/W
SPending-Rev. B, 01-Oct-10
Document Number: 69067
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SiA906EDJ
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
23
-
-
-3.3
-
0.6
-
1.4
±8
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
ID = 250 μA
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = 250 μA
IGSS
VDS = 0 V, VGS = ± 12 V
-
-
VDS = 20 V, VGS = 0 V
-
-
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
-10
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
mV/°C
V
μA
VDS 5 V, VGS = 4.5 V
10
-
-
A
VGS = 4.5 V, ID = 3.9 A
-
0.037
0.046
VGS = 2.5 V, ID = 3.3 A
-
0.051
0.063
VDS = 10 V, ID = 3.9 A
-
14
-
-
350
-
-
63
-
-
37
-
-
7.5
12
-
3.5
5.5
VDS = 10 V, VGS = 4.5 V, ID = 5.1 A
-
0.95
-
-
0.75
-
f = 1 MHz
0.7
3.5
7
-
10
15
VDD = 10 V, RL = 2.4
ID 4.1 A, VGEN = 4.5 V, Rg = 1
-
12
20
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 5.1 A
td(on)
tr
td(off)
pF
nC
-
18
30
tf
-
12
20
td(on)
-
5
10
-
12
20
-
15
25
-
10
15
-
-
4.5
-
-
15
-
0.8
1.2
V
-
15
30
ns
-
8
20
nC
-
8
-
-
7
-
tr
td(off)
VDD = 10 V, RL = 2.4
ID 4.1 A, VGEN = 10 V, Rg = 1
tf
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 4.1 A, VGS = 0 V
IF = 4.1 A, di/dt = 100 A/μs,
TJ = 25 °C
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPending-Rev. B, 01-Oct-10
Document Number: 69067
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SiA906EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4
10-2
3
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
10-3
2
IGSS at 25 °C
1
10-4
10-5
TJ = 150 °C
10-6
10-7
TJ = 25 °C
10-8
10-9
10-10
0
0
3
6
9
12
15
18
0
3
6
9
12
15
18
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
15
5
VGS = 5 V thru 3 V
VGS = 2.5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
12
9
6
VGS = 2 V
3
TC = - 55 °C
3
2
TC = 25 °C
1
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.5
2.0
Transfer Characteristics
Output Characteristics
0.12
500
Ciss
400
0.09
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
VGS = 2.5 V
0.06
VGS = 4.5 V
300
200
Coss
0.03
100
Crss
0.00
0
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
SPending-Rev. B, 01-Oct-10
0
2
4
6
8
10
12
14
16
18
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 69067
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SiA906EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.7
ID = 3.9 A
1.5
VDS = 10 V
6
VDS = 16 V
4
1.3
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 5.1 A
8
VGS = 4.5 V, 2.5 V
1.1
0.9
2
0.7
0
0
2
4
6
0.5
- 50
8
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Gate Charge
100
0.20
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2 A
10
TJ = 150 °C
TJ = 25 °C
1
0.16
0.12
0.08
TJ = 125 °C
0.04
TJ = 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.3
20
1.2
Power (W)
VGS(th) (V)
15
ID = 250 µA
1.1
1.0
0.9
0.8
10
5
0.7
0.6
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
SPending-Rev. B, 01-Oct-10
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
Document Number: 69067
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SiA906EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µA
1
1 ms
10 ms
100 ms
10 s, 1 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
8
12
Power Dissipation (W)
I D - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating
a
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
Note
a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
SPending-Rev. B, 01-Oct-10
Document Number: 69067
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Work-In-Progress
SiA906EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69067.
SPending-Rev. B, 01-Oct-10
Document Number: 69067
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
www.vishay.com
1
Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
