SiA911ADJ
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.116 at VGS = - 4.5 V
- 4.5a
0.155 at VGS = - 2.5 V
- 4.5a
0.205 at VGS = - 1.8 V
a
- 4.5
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
4.9 nC
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SC-70-6 Dual
• Load Switch, PA Switch and Battery Switch for Portable
Devices
S1
S2
1
S1
Marking Code
2
G1
3
D1
DGX
D2
D1
6
Part # Code
D2
4
S2
G2
Lot Traceability
and Date Code
G2
5
2.05 mm
G1
XXX
2.05 mm
D1
Ordering Information: SiA911ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
V
- 4.5a
- 1.5b, c
6.5
4.2
IS
PD
Unit
- 4.5a
- 4.5a
- 3.2b, c
- 2.6b, c
-8
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
- 20
±8
1.8b, c
1.1b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
55
15
Maximum
70
19
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
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1
SiA911ADJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
2.4
- 0.4
-1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
RDS(on)
V
- 19
µA
A
-8
VGS = - 4.5 V, ID = - 2.8 A
0.096
0.116
VGS = - 2.5 V, ID = - 2.3 A
0.126
0.155
VGS = - 1.8 V, ID = - 0.54 A
0.165
0.205
VDS = - 10 V, ID = - 2.8 A
7
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
345
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
65
50
VDS = - 10 V, VGS = - 8 V, ID = - 3.5 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.5 A
8.4
13
4.9
7.4
0.75
nC
1.2
6
15
25
VDD = - 10 V, RL = 2.85 Ω
ID ≅ - 3.5 A, VGEN = - 4.5 V, Rg = 1 Ω
45
70
20
30
td(on)
tr
td(off)
Ω
f = 1 MHz
tf
10
15
td(on)
5
10
VDD = - 10 V, RL = 2.85 Ω
ID ≅ - 3.5 A, VGEN = - 8 V, Rg = 1 Ω
tr
td(off)
tf
10
15
20
30
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 4.5
-8
IS = - 1.0 A, VGS = 0 V
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
20
40
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 4.5 A, dI/dt = 100 A/µs, TJ = 25 °C
15
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68968
S-82481-Rev. A, 13-Oct-08
SiA911ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.0
10
VGS = 5 thru 2.5 V
VGS = 2 V
6
4
VGS = 1.5 V
1.5
I D - Drain Current (A)
I D - Drain Current (A)
8
1.0
TC = 25 °C
0.5
2
TC = 125 °C
0
0.0
0.5
1.0
1.5
2.0
0.3
0.6
0.9
1.2
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
700
0.30
600
0.25
VGS = 1.8 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
TC = - 55 °C
0.0
0.0
0.20
VGS = 2.5 V
0.15
0.10
VGS = 4.5 V
500
Ciss
400
300
200
Coss
0.05
100
0.00
0
Crss
0
2
4
6
8
0
10
5
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.6
8
ID = 2.8 A
ID = 3.5 A
VDS = 10 V
VDS = 5 V
VDS = 15 V
4
2
(Normalized)
1.4
6
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
10
1.2
1.0
VGS = 4.5 V
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
8
10
0.6
- 50
VGS = 1.8 V
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiA911ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.5
10
0.4
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2.8 A
TJ = 150 °C
1
TJ = 25 °C
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.4
0.3
15
0.2
Power (W)
VGS(th) Variance (V)
ID = 250 µA
ID = 1 mA
0.1
10
0.0
5
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
10
Limited by RDS(on)*
I D - Drain Current (A)
100 µs
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
100 s, DC
BVDSS Limited
TA = 25 °C
Single Pulse
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 68968
S-82481-Rev. A, 13-Oct-08
SiA911ADJ
Vishay Siliconix
8
8
6
6
Package Limited
Power (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
4
2
4
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
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5
SiA911ADJ
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
Single Pulse
3. TJM - T A = PDMZthJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68968.
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6
Document Number: 68968
S-82481-Rev. A, 13-Oct-08
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2022
1
Document Number: 91000
