SIA911DJ-T1-E3

SiA911DJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 4.9 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices S S PowerPAK SC-70-6 Dual 1 2 1 S1 2 G1 Marking Code G1 3 D1 D2 D1 6 Part # code D2 XXX Lot Traceability and Date code G2 5 2.05 mm 4 S2 G2 DCX 2.05 mm D1 Ordering Information: SiA911DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 ±8 Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TJ, Tstg Operating Junction and Storage Temperature Range - 4.5a - 1.6b, c 6.5 5 IS PD Soldering Recommendations (Peak Temperature)d, e V - 4.5a - 4.5a - 3.6b, c - 2.9b, c -8 IDM Pulsed Drain Current Unit 1.9b, c 1.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 74329 S-80437-Rev. C, 03-Mar-08 www.vishay.com 1 SiA911DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.1 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V - 16.2 8 µA A VGS = - 4.5 V, ID = - 2.8 A 0.078 0.094 VGS = - 2.5 V, ID = - 2.3 A 0.109 0.131 VGS = - 1.8 V, ID = - 0.54 A 0.153 0.185 VDS = - 10 V, ID = - 2.8 A 7 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 355 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 75 50 VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A 8.5 12.8 4.9 7.4 0.75 nC 1.2 f = 1 MHz td(on) Ω 8 10 15 35 55 40 60 tf 50 75 td(on) 5 10 10 15 VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) VDD = - 10 V, RL = 2.2 Ω ID ≅ - 4.5 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 4.5 8 IS = - 4.5 A, VGS = 0 V - 0.85 - 1.2 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 13 26 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 4.5 A, di/dt = 100 A/µs, TJ = 25 °C 10 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 8 1.6 I D - Drain Current (A) I D - Drain Current (A) VGS = 2.5 thru 5 V 6 2V 4 1.2 TC = 125 °C 0.8 TC = 25 °C 1.5 V 2 0.4 0 0.0 0.0 0.0 TC = - 55 °C 0.4 0.8 1.2 1.6 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.3 VGS = 1.8 V C - Capacitance (pF) R DS (on) - On-Resistance (Ω) 500 0.25 0.2 VGS = 2.5 V 0.15 VGS = 4.5 V 0.1 400 Ciss 300 200 Coss 100 Crss 0 0.05 0 2 4 6 I D - Drain Current (A) 8 0 10 4 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 4.5 A ID = 2.8 A 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 4 VDS = 16 V 2 1.2 1.0 VGS = 4.5 V, 2.5 V, 1.8 V 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74329 S-80437-Rev. C, 03-Mar-08 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 10 TJ = 150 °C TJ = 25 °C 1 0.25 R DS(on) - On-Resistance (Ω) I S - Source Current (A) I D = 2.8 A 0.2 TA = 125 °C 0.15 0.1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 0.05 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 20 0.8 0.7 Power (W) VGS(th) (V) 15 ID = 250 µA 0.6 10 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 Limited by RDS(on)* 1000 IDM limited ID(on) limited I D - Drain Current (A) 100 µs 1 1 ms 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 SiA911DJ Vishay Siliconix 8 8 6 6 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited 4 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74329 S-80437-Rev. C, 03-Mar-08 www.vishay.com 5 SiA911DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74329. www.vishay.com 6 Document Number: 74329 S-80437-Rev. C, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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