SIA912DJ-T1-GE3

New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.040 at VGS = 4.5 V 4.5 0.048 at VGS = 2.5 V 4.5 0.063 at VGS = 1.8 V 4.5 VDS (V) 12 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhaced PowerPAK® SC-70 Package - Small Footprint Area Qg (Typ.) 4.5 nC RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6 Dual • Load Switch for Portable Applications 1 S1 D1 2 G1 Marking Code 3 D2 D1 D2 CAX D1 6 D2 G2 5 2.05 mm 4 S2 Part # code XXX Lot Traceability and Date code 2.05 mm G1 Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) ID d, e IS PD TJ, Tstg Limit 12 ±8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State 12.5 16 Maximum Junction-to-Case (Drain) Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 www.vishay.com 1 New Product SiA912DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS /TJ ΔVGS(th) /TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 12 ID = 250 µA VGS(th) Temperature Coefficient V mV/°C - 2.8 1.0 V VDS = 0 V, VGS = ± 8 V ± 100 ns VDS = 12 V, VGS = 0 V -1 VDS = 12 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = 4.5 V 0.4 µA A - 20 VGS = 4.5 V, ID = 4.2 A 0.033 0.040 VGS = 2.5 V, ID = 3.8 A 0.039 0.048 VGS = 1.8 V, ID = 1.6 A 0.051 0.063 VDS = 6 V, ID = 4.2 A 13 VDS = 6 V, VGS = 0 V, f = 1 MHz 120 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 400 VDS = 6 V, VGS = 8 V, ID = 5.5 A td(off) tf tr tf 11.5 6.8 0.6 f = 1 MHz 2.5 nC 0.8 VDD = 6 V, RL = 1.4 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω td(on) td(off) 7.5 4.5 VDS = 6 V, VGS = 4.5 V, ID = 5.5 A td(on) tr pF 70 VDD = 6 V, RL = 1.6 Ω ID ≅ 4.4 A, VGEN = 8 V, Rg = 1 Ω Ω 5 10 15 25 35 55 15 25 5 10 10 15 15 25 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 4.5 20 IS = 4.4 A, VGS = 0 V IF = 4.4 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 15 30 ns 8 20 nC 8.5 ns 6.5 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 5 thru 2.5 V 8 VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.4 0.8 1.2 1.6 TC = - 55 °C 0 0.0 2.0 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 600 VGS = 1.8 V 0.09 500 C - Capacitance (pF) 0.08 0.07 0.06 0.05 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 400 300 200 Coss 100 Crss 0.03 0 0 4 8 12 16 20 0 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 5.5 A 1.5 1.4 6 VDS = 6 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 1.0 VDS - Drain-to-Source Voltage (V) 0.10 R DS(on) - On-Resistance (Ω) 0.5 VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V, ID = 4.2 A 1.3 1.2 1.1 1.0 0.9 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74953 S-80436-Rev. B, 03-Mar-08 8 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.10 0.08 0.06 ID = 4.2 A, 125 °C 0.04 ID = 4.2 A, 25 °C 0.1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 5 20 0.8 0.7 ID = 250 µA 15 Power (W) VGS(th) (V) 0.6 0.5 0.4 10 0.3 5 0.2 0.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 100 1000 Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 14 Power Dissipation (W) ID - Drain Current (A) 12 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74953 S-80436-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA912DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74953. www.vishay.com 6 Document Number: 74953 S-80436-Rev. B, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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