SIA913DJ-T1-GE3

New Product SiA913DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V - 4.5a 0.100 at VGS = - 2.5 V - 4.5a 0.140 at VGS = - 1.8 V a - 4.5 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 5 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC-70-6 Dual S1 S2 1 S1 2 G1 Marking Code 3 D1 Part # code D1 6 D2 4 S2 G2 XXX Lot Traceability and Date code G2 5 2.05 mm G1 DDX D2 2.05 mm D1 Ordering Information: SiA913DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit - 12 ±8 - 4.5a - 4.5a - 4.3b, c - 3.4b, c - 10 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 12.5 16 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 73951 S-80437-Rev. B, 03-Mar-08 www.vishay.com 1 New Product SiA913DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.1 - 0.4 -1 V ± 100 nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) V -7 -8 µA A VGS = - 4.5 V, ID = - 3.3 A 0.058 0.070 VGS = - 2.5 V, ID = - 2.8 A 0.082 0.100 VGS = - 1.8 V, ID = - 0.7 A 0.111 0.140 VDS = - 10 V, ID = - 3.3 A 9 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 400 VDS = - 6 V, VGS = 0 V, f = 1 MHz pF 140 100 VDS = - 6 V, VGS = - 8 V, ID = - 4.3 A VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A 8 12 5 7.5 0.8 nC 1.4 f = 1 MHz td(on) VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) Ω 7 15 25 25 40 20 30 tf 10 15 td(on) 5 10 12 20 VDD = - 6 V, RL = 1.8 Ω ID ≅ - 3.4 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 20 30 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 4.5 10 IS = - 3.4 A, VGS = 0 V - 0.85 - 1.2 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 12 24 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3.4 A, di/dt = 100 A/µs, TJ = 25 °C 14 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73951 S-80437-Rev. B, 03-Mar-08 New Product SiA913DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.0 VGS = 5 thru 2.5 V VGS = 2 V 1.6 I D - Drain Current (A) ID - Drain Current (A) 8 6 4 VGS = 1.5 V 2 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C TC = - 55 °C 0 0.0 0.4 0.8 1.2 1.6 0.0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 700 600 0.25 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.20 0.15 VGS = 2.5 V 0.10 0.05 500 Ciss 400 300 Coss 200 Crss 100 VGS = 4.5 V 0.00 0 0 2 4 6 8 10 0 2 ID - Drain Current (A) 4 On-Resistance vs. Drain Current and Gate Voltage 8 10 12 Capacitance 8 1.6 ID = 3.3 A ID = 4.3 A VDS = 6 V 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) VDS = 9.6 V 4 2 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.0 0.8 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73951 S-80437-Rev. B, 03-Mar-08 8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiA913DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.20 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.3 A TJ = 25 °C 1 0.15 0.10 125 °C 0.05 25 °C 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.8 0.7 0.6 Power (W) V GS(th) (V) 15 ID = 250 µA 0.5 10 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 10 I D - Drain Current (A) Limited by R DS(on)* 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73951 S-80437-Rev. B, 03-Mar-08 New Product SiA913DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 10 Power Dissipation (W) I D - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73951 S-80437-Rev. B, 03-Mar-08 www.vishay.com 5 New Product SiA913DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73951. www.vishay.com 6 Document Number: 73951 S-80437-Rev. B, 03-Mar-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1