SIA922EDJ-T4-GE3

SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.064 at VGS = 4.5 V 4.5a 0.072 at VGS = 3.0 V 4.5a 0.080 at VGS = 2.5 V 4.5a 0.400 at VGS = 1.8 V 0.2 • TrenchFET® Power MOSFET • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance • Typical ESD protection: 1500 V (HBM) • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (TYP.) 3.5 nC PowerPAK SC-70-6 Dual 1 S1 APPLICATIONS 2 G1 • Portable devices such as smart phones, tablet PCs and mobile computing - Load switch - DC/DC converter - Power management 3 D2 D1 D1 6 D2 G2 5 2.05 mm 4 2.05 mm S2 D1 D2 Ordering Information: SiA922EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) CIX Part # code XXX G1 Marking Code Lot Traceability and Date code G2 N-Channel MOSFET S1 N-Channel MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 4.5a TC = 70 °C 4.5a ID TA = 25 °C 3.5b, c Pulsed Drain Current (t = 300 μs) IDM TC = 25 °C 15 1.6b, c TC = 25 °C 7.8 TC = 70 °C 5 PD TA = 25 °C W 1.9b, c 1.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A 4.5a IS TA = 25 °C Maximum Power Dissipation V 4.4b, c TA = 70 °C Continuous Source-Drain Diode Current UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) d,e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) SYMBOL TYPICAL MAXIMUM t5s RthJA 52 65 Steady State RthJC 12.5 16 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state condition is 110 °C/W. S13-2266-Rev. B, 04-Nov-13 Document Number: 62818 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA922EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. VDS VGS = 0 V, ID = 250 μA 30 TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA VDS = VGS, ID = 250 μA V 34 mV/°C -3.3 0.6 1.4 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = 0 V, VGS = ± 12 V ± 20 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS  5 V, VGS = 4.5 V 10 V μA A VGS = 4.5 V, ID = 3 A 0.049 0.064 VGS = 3.0 V, ID = 3 A 0.055 0.072 VGS = 2.5 V, ID = 1 A 0.060 0.080 VGS = 1.8 V, ID = 0.2 A 0.100 0.400 VDS = 15 V, ID = 3 A 13 VDS = 15 V, VGS = 10 V, ID = 4 A 7.5 12 3.5 5.5 VDS = 15 V, VGS = 4.5 V, ID = 4 A 1.8  S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Rg 0.7 f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 4.7  ID  3.2 A, VGEN = 4.5 V, Rg = 1  0.6 3.3 6.6 20 40 60 120 25 50 tf 45 90 td(on) 1.5 5 30 60 15 30 50 100 tr td(off) nC VDD = 15 V, RL = 4.7  ID  3.2 A, VGEN = 10 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 3.9 15 IS = 3.2 A, VGS = 0 V 0.87 1.2 A V Body Diode Reverse Recovery Time trr 10 20 ns Body Diode Reverse Recovery Charge Qrr 4 10 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 3.2 A, dI/dt = 100 A/μs, TJ = 25 °C 5.3 4.6 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2266-Rev. B, 04-Nov-13 Document Number: 62818 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA922EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 1.500 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.200 0.900 TJ = 25 °C 0.600 10-4 10-5 TJ = 150 °C -6 10 TJ = 25 °C 10-7 10-8 0.300 10-9 10-10 0.000 0 3 6 9 12 0 15 3 6 9 12 15 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 5 VGS = 5 V thru 3 V VGS = 2.5 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 2 V 6 3 3 TC = 25 °C 2 TC = 125 °C 1 VGS = 1.5 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 450 0.160 350 0.120 0.080 VGS = 3 V VGS = 2.5 V VGS = 4.5 V 0.040 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 400 Ciss 300 250 200 150 100 Crss Coss 50 0 0.000 0 3 6 9 12 15 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S13-2266-Rev. B, 04-Nov-13 25 30 Document Number: 62818 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA922EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 VGS - Gate-to-Source Voltage (V) ID = 4 A RDS(on) - On-Resistance (Normalized) 1.8 VDS = 7.5 V 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 2 4 6 1.6 VGS = 10 V, 4.5 V, ID = 3.2 A 1.4 1.2 VGS = 2.5 V, ID = 1 A 1.0 0.8 0.6 - 50 8 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.160 0.140 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3 A 10 TJ = 150 °C TJ = 25 °C 1 0.120 0.100 TJ = 125 °C 0.080 0.060 TJ = 25 °C 0.040 0.020 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 1.2 1.1 15 Power (W) VGS(th) (V) 1.0 0.9 0.8 10 ID = 250 μA 0.7 5 0.6 0.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage S13-2266-Rev. B, 04-Nov-13 Single Pulse Power (Junction-to-Ambient) Document Number: 62818 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA922EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 us 1 1 ms 0.1 10 ms 100 ms 1s 10 s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 10 Power Dissipation (W) ID - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating       * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-2266-Rev. B, 04-Nov-13 Document Number: 62818 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA922EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                   Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62818. S13-2266-Rev. B, 04-Nov-13 Document Number: 62818 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000