SIA923AEDJ-T1-GE3

SiA923AEDJ www.vishay.com Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) 0.054 at VGS = -4.5 V -4.5 a 0.070 at VGS = -2.5 V -4.5 a 0.104 at VGS = -1.8 V -4.5 a 0.165 at VGS = -1.5 V -1.5 Qg (TYP.) 9.5 nC PowerPAK® SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 2500 V • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Charger Switches and Load Switches for Portable Devices • DC/DC Converters D1 D2 S1 05 2. m m m 5m 2.0 Top View 3 D2 Bottom View 1 2 G1 S2 1 S1 G1 G2 Marking Code: DP Ordering Information: SiA923AEDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 TC = 70 °C TA = 25 °C -4.5 a ID -4.5 a,b,c -4.5 a,b,c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C -4.5 a IS -1.6 b,c 7.8 5 PD W 1.9 b,c 1.2 b,c TA = 70 °C Operating Junction and Storage Temperature Range A -15 TC = 25 °C TC = 70 °C V -4.5 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 Soldering Recommendations (Peak Temperature) d,e °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL b,f Maximum Junction-to-Case (Drain) TYPICAL MAXIMUM t5s RthJA 52 65 Steady State RthJC 12.5 16 UNIT °C/W Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. S13-2636-Rev. A, 30-Dec-13 Document Number: 62936 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA923AEDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - V - -15 - - 2.5 - -0.4 - -0.9 VDS = 0 V, VGS = ± 4.5 V - ± 0.3 ±3 VDS = 0 V, VGS = ± 8 V - ±3 ± 30 VDS = -20 V, VGS = 0 V - - -1 -10 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a ID = -250 μA VDS = VGS, ID = -250 μA VDS = -20 V, VGS = 0 V, TJ = 55 °C - - VDS  -5 V, VGS = -4.5 V -15 - - VGS = -4.5 V, ID = -3.8 A - 0.044 0.054 VGS = -2.5 V, ID = -3.3 A - 0.057 0.070 VGS = -1.8 V, ID = -1 A - 0.075 0.104 VGS = -1.5 V, ID = -0.5 A - 0.097 0.165 VDS = -10 V, ID = -3.8 A - 11 - - 770 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 90 - - 81 - - 16.3 25 - 9.5 14.5 VDS = -10 V, VGS = -4.5 V, ID = -4.9 A - 1.4 - - 2.3 - f = 1 MHz 1 5.1 10 - 15 25 - 16 25 - 30 45 tf - 10 15 td(on) - 7 15 - 12 20 - 26 40 - 10 15 RDS(on) gfs mV/°C V μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = -10 V, VGS = -8 V, ID = -4.9 A td(on) VDD = -10 V, RL = 2.6  ID  -3.9 A, VGEN = -4.5 V, Rg = 1  tr td(off) VDD = -10 V, RL = 2.6  ID  -3.9 A, VGEN = -8 V, Rg = 1  tr td(off) tf pF nC  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = -3.9 A, VGS = 0 V IF = -3.9 A, dI/dt = 100 A/μs, TJ = 25 °C - - -4.5 - - -15 - -0.9 -1.2 V - 13 25 ns - 5.5 12 nC - 7.5 - - 5.5 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2636-Rev. A, 30-Dec-13 Document Number: 62936 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA923AEDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 10-1 10-2 10-3 IG - Gate Current (A) IG - Gate Current (mA) 40 30 TJ = 25 °C 20 TJ = 150 °C 10-4 10-5 TJ = 25 °C 10-6 10-7 10 10-8 0 10-9 0 3 6 9 12 15 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 15 15 5 V GS = 5 V thru 2.5 V V GS = 2 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 6 V GS = 1.5 V 3 3 2 T C = 25 °C 1 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1.5 1500 V GS = 1.5 V 0.16 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0.0 0.12 V GS = 1.8 V 0.08 V GS = 2.5 V 0.04 900 Ciss 600 300 V GS = 4.5 V Coss Crss 0 0 0 3 6 9 12 15 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance S13-2636-Rev. A, 30-Dec-13 20 Document Number: 62936 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA923AEDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.9 A V DS = 10 V 6 V DS = 5 V V DS = 16 V 4 2 3 6 9 12 15 V GS = 2.5 V; 4.5 V; I D = 3.8 A 1.3 V GS = 1.8 V; I D = 1 A 1.2 1.1 V GS = 1.5 V; I D = 0.5 A 1.0 0.9 0.8 0.7 - 50 0 0 1.4 18 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 100 0.18 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.15 T J = 150 °C 10 T J = 25 °C 1 ID = 3.8 A; T J = 25 °C 0.12 ID = 1 A; T J = 125 °C ID = 3.8 A; T J = 125 °C 0.09 0.06 ID = 1 A; T J = 25 °C 0.03 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.75 5 20 0.65 0.55 Power (W) VGS(th) (V) 15 ID = 250 μA 0.45 10 5 0.35 0.25 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage S13-2636-Rev. A, 30-Dec-13 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient Document Number: 62936 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA923AEDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on) * Limited by IDM ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-2636-Rev. A, 30-Dec-13 Document Number: 62936 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA923AEDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62936. S13-2636-Rev. A, 30-Dec-13 Document Number: 62936 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000