SIA923EDJ-T1-GE3

SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.054 at VGS = - 4.5 V - 4.5a 0.070 at VGS = - 2.5 V - 4.5a 0.104 at VGS = - 1.8 V - 4.5a 0.165 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 2500 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 9.5 nC APPLICATIONS • Charger Switches and Load Switches for Portable Devices S1 S2 • DC/DC Converters PowerPAK SC-70-6 Dual 1 S1 Marking Code 2 G1 3 D2 D1 D1 6 DKX Part # code XXX D2 Lot Traceability and Date code G2 5 2.05 mm 4 G1 G2 2.05 mm S2 D1 Ordering Information: SiA923EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 ±8 Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e - 4.5a - 1.6b, c 7.8 5 IS PD V - 4.5a - 4.5a - 4.5a, b, c - 4.5a, b, c - 15 IDM Pulsed Drain Current Unit 1.9b, c 1.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t≤5s Symbol RthJA Steady State RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 www.vishay.com 1 SiA923EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea - 15 ID = - 250 µA VDS = VGS, ID = - 250 µA V - 0.5 - 1.4 VDS = 0 V, VGS = ± 4.5 V ± 0.3 ±3 VDS = 0 V, VGS = ± 8 V ±3 ± 30 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) gfs mV/°C 2.5 V µA - 10 - 15 A VGS = - 4.5 V, ID = - 3.8 A 0.044 0.054 VGS = - 2.5 V, ID = - 3.3 A 0.057 0.070 VGS = - 1.8 V, ID = - 1 A 0.075 0.104 VGS = - 1.5 V, ID = - 0.5 A 0.097 0.165 VDS = - 10 V, ID = - 3.8 A 11 VDS = - 10 V, VGS = - 8 V, ID = - 4.9 A 16.3 25 9.5 14.5 Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 4.9 A 1.4 nC 2.3 f = 1 MHz 5.1 10 15 25 16 25 30 45 tf 10 15 td(on) 7 15 12 20 td(on) VDD = - 10 V, RL = 2.6 Ω ID ≅ - 3.9 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) VDD = - 10 V, RL = 2.6 Ω ID ≅ - 3.9 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 1 26 40 10 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 4.5 - 15 IS = - 3.9 A, VGS = 0 V A - 0.9 - 1.2 Body Diode Reverse Recovery Time trr 13 25 ns Body Diode Reverse Recovery Charge Qrr 5.5 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C 7.5 5.5 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-1 50 10-2 10-3 IG - Gate Current (A) IG - Gate Current (mA) 40 30 TJ = 25 °C 20 TJ = 150 °C 10-4 10-5 TJ = 25 °C 10-6 10-7 10 10-8 10-9 0 0 3 6 9 12 0 15 3 6 9 12 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 15 5 15 V GS = 5 V thru 2.5 V V GS = 2 V 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 6 V GS = 1.5 V 3 2 T C = 25 °C 1 3 T C = 125 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 T C = - 55 °C 0 0.0 3.0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.20 1500 0.16 1200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) V GS = 1.5 V 0.12 V GS = 1.8 V 0.08 V GS = 2.5 V 0.04 900 Ciss 600 300 V GS = 4.5 V Coss Crss 0 0 0 3 6 9 12 15 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 20 www.vishay.com 3 SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 8 1.4 V GS = 2.5 V; 4.5 V; I D = 3.8 A V DS = 10 V V DS = 5 V V DS = 16 V 4 2 1.3 V GS = 1.8 V; I D = 1 A (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 4.9 A 1.2 1.1 V GS = 1.5 V; I D = 0.5 A 1.0 0.9 0.8 0.7 - 50 0 0 3 6 9 12 15 18 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.18 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.15 T J = 150 °C 10 T J = 25 °C 1 ID = 3.8 A; T J = 25 °C 0.12 ID = 1 A; T J = 125 °C ID = 3.8 A; T J = 125 °C 0.09 0.06 ID = 1 A; T J = 25 °C 0.03 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.75 20 0.65 0.55 Power (W) VGS(th) (V) 15 ID = 250 μA 0.45 5 0.35 0.25 - 50 www.vishay.com 4 10 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on) * ID - Drain Current (A) 10 100 μs 1 1 ms 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 Power Dissipation (W) ID - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 www.vishay.com 5 SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66803. www.vishay.com 6 Document Number: 66803 S10-1535-Rev. A, 19-Jul-10 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000