SIA929DJ-T1-GE3

SiA929DJ www.vishay.com Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SC-70-6L Dual S2 4 • TrenchFET® Gen III power MOSFET D1 6 G2 5 • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Low on-resistance D1 D2 • 100 % Rg tested 05 2. m m 1 m 5m 2.0 Top View 2 3 G1 D2 Bottom View 1 S1 APPLICATIONS Marking code: DN • Load switch and battery management for smart phones, tablet PCs, and portable media players • Fast battery charging PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V Qg typ. (nC) ID (A) a Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -30 0.064 0.078 0.120 6.6 -4.5 Dual S1 S2 G1 P-Channel MOSFET G2 D1 P-Channel MOSFET D2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-70 SiA929DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) Continuous source-drain diode current Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg LIMIT -30 ± 12 -4.5 a -4.5 a -4.3 b, c -3.4 b, c -15 -4.5 a -1.6 b, c 7.8 5 1.9 b, c 1.2 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t5s RthJA 52 65 °C/W 12.5 16 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 °C/W S11-1654-Rev. A, 15-Aug-11 Document Number: 63398 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA929DJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -30 - - - V -23 - - 1.5 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.6 - -1.1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 ID(on) VDS  -5 V, VGS = -10 V -10 - - VGS = -10 V, ID = -3 A - 0.052 0.064 RDS(on) VGS = -4.5 V, ID = -2 A - 0.062 0.078 VGS = -2.5 V, ID = -1 A - 0.090 0.120 VDS = -15 V, ID = -3 A - 10 - - 575 - - 60 - - 51 - - 14 21 - 6.6 10 VDS = -15 V, VGS = -4.5 V, ID = -4.3 A - 1.2 - - 1.9 - f = 1 MHz 1.1 5.5 11 - 15 30 gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = 0 V, f = 1 MHz VDS = -15 V, VGS = -10 V, ID = -4.3 A td(on) tr VDD = -15 V, RL = 4.4  ID  -3.4 A, VGEN = -4.5 V, Rg = 1  - 18 35 - 22 40 tf - 10 20 td(on) - 5 10 td(off) tr td(off) VDD = -15 V, RL = 4.4  ID  -3.4 A, VGEN = -10 V, Rg = 1  tf - 10 20 - 22 40 - 10 20 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -3.4 A, VGS = 0 V IF = -3.4 A, di/dt = 100 A/μs, TJ = 25 °C - - -4.5 - - -15 - -0.89 -1.2 V - 20 40 ns - 10 20 nC - 9 - - 11 - A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1654-Rev. A, 15-Aug-11 Document Number: 63398 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA929DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 15 VGS = 10 V thru 3 V TC = 25 °C 4 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 2 V 6 TC = 125 °C 3 TC = - 55 °C 2 1 3 VGS = 1 V 0 0 0 0.5 1 2 1.5 2.5 VDS - Drain-to-Source Voltage (V) 3 0 0.5 1000 0.16 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.20 0.12 VGS = 2.5 V VGS = 4.5 V VGS = 10 V 0.04 1.5 2 Transfer Characteristics Output Characteristics 0.08 1 VGS - Gate-to-Source Voltage (V) Ciss 600 400 200 Coss 0 Crss 0 0 3 6 9 ID - Drain Current (A) 12 15 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 10 ID = 3 A RDS(on) - On-Resistance (Normalized) ID = 4.3 A VGS - Gate-to-Source Voltage (V) 30 VDS = 7.5 V 8 6 VDS = 15 V VDS = 24 V 4 2 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge S11-1654-Rev. A, 15-Aug-11 15 1.6 1.4 VGS = 10 V, 4.5 V, 2.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 63398 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA929DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.20 100 ID = 3 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.16 TJ = 150 °C 10 TJ = 25 °C 1 0.12 TJ = 125 °C 0.08 TJ = 25 °C 0.04 0.1 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage 0.85 20 0.80 15 Power (W) VGS(th) (V) 0.75 0.70 0.65 ID = 250 μA 0.60 10 5 0.55 0.50 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.001 150 0.01 0.1 1 10 100 1000 Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 us 1 1 ms 10 ms 0.1 TA = 25 °C BVDSS Limited 100 ms 1s 10 s DC 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient S11-1654-Rev. A, 15-Aug-11 Document Number: 63398 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA929DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 10 6 Power Dissipation (W) ID - Drain Current (A) 8 6 Package Limited 4 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-1654-Rev. A, 15-Aug-11 Document Number: 63398 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA929DJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 t1 t2 2. Per Unit Base = RthJA = 110 °C/W Single Pulse 1. Duty Cycle, D = 3. TJM - TA = PDMZthJA (t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63398. S11-1654-Rev. A, 15-Aug-11 Document Number: 63398 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000