SIA950DJ-T1-GE3

SiA950DJ Vishay Siliconix Dual N-Channel 190-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 3.8 at VGS = 4.5 V 0.95 190 4.2 at VGS = 2.5 V 0.9 17 at VGS = 1.8 V 0.3 • Halogen-free According to IEC 61249-2-21 • LITTLE FOOT® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile Qg (Typ.) 1.4 nC APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch for Portable Devices PowerPAK SC-70-6 Dual D1 D2 1 S1 2 G1 Marking Code 3 D2 D1 D1 6 G2 5 2.05 mm 4 S2 CEX Part # code D2 G1 G2 XXX Lot Traceability and Date code 2.05 mm Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 0.95 TC = 70 °C 0.76 TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Soldering Recommendations (Peak Temperature)d, e Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 V 0.47b, c 0.38b, c 1 A 0.95 0.47b, c 7 5 1.9b, c W 1.2b, c TA = 70 °C Operating Junction and Storage Temperature Range 190 Unit TJ, Tstg - 55 to 150 260 °C www.vishay.com 1 SiA950DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJC t≤5s Steady State Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 190 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 200 mV/°C - 3.0 0.6 1.4 V ± 100 nA VDS = 190 V, VGS = 0 V 1 VDS = 190 V, VGS = 0 V, TJ = 85 °C 10 VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 0.36 A 1 µA A 3.0 3.8 VGS = 2.5 V, ID = 0.35 A 3.2 4.2 VGS = 1.8 V, ID = 0.15 A 3.5 17.0 VDS = 15 V, ID = 0.36 A 2 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 90 VDS = 100 V, VGS = 0 V, f = 1 MHz tr pF 3 VDS = 95 V, VGS = 10 V, ID = 0.47 A 3 4.5 1.4 2.1 VDS = 95 V, VGS = 4.5 V, ID = 0.47 A 0.25 f = 1 MHz VDD = 95 V, RL = 250 Ω ID ≅ 0.38 A, VGEN = 4.5 V, Rg = 1 Ω Ω 2.3 10 15 15 25 25 40 tf 15 25 td(on) 3 10 12 20 10 15 10 15 tr td(off) nC 0.40 td(on) td(off) 5 VDD = 95 V, RL = 250 Ω ID ≅ 0.38 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD www.vishay.com 2 TC = 25 °C 0.95 1 IS = 0.5 A, VGS = 0 V 0.8 1.2 A V Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 SiA950DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr 45 70 ns Body Diode Reverse Recovery Charge Qrr 45 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 0.5 A, dI/dt = 100 A/µs, TJ = 25 °C 21 ns 24 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 0.5 0.9 VGS = 5 thru 2 V 0.4 I D - Drain Current (A) I D - Drain Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TC = - 55 °C 0.3 0.2 TC = 25 °C 0.1 0.1 TC = 125 °C VGS = 1 V 0.0 0 1 2 3 4 5 6 7 8 9 0.0 0.0 10 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 150 120 5 VGS = 1.8 V 4 VGS = 2.5 V VGS = 4.5 V 3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 Ciss 90 60 30 Coss 2 0.0 0 0.2 0.4 0.6 0.8 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 1.0 Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SiA950DJ Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.4 10 VDS = 95 V 2.0 6 VDS = 152 V 4 VGS = 4.5 V; 2.5 V; ID = 0.36 A (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 0.47 A 8 1.2 VGS = 1.8 V; ID = 0.15 A 0.8 2 0 0.0 1.6 0.5 1.0 1.5 2.0 2.5 0.4 - 50 3.0 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 8 1 ID = 0.36 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 7 TJ = 150 °C 0.1 TJ = 25 °C TJ = 125 °C 6 5 4 TJ = 25 °C 3 0.01 0.0 2 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 20 1.4 1.3 15 Power (W) VGS(th) (V) 1.2 1.1 ID = 250 µA 1.0 0.9 10 5 0.8 0.7 - 50 www.vishay.com 4 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 1000 Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 SiA950DJ Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 Limited by RDS(on)* I D - Drain Current (A) 1 100 µs 0.1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1.2 8 0.9 6 Power Dissipation (W) I D - Drain Current (A) Safe Operating Area, Junction-to-Ambient 0.6 0.3 4 2 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 www.vishay.com 5 SiA950DJ Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64712. www.vishay.com 6 Document Number: 64712 S09-0142-Rev. A, 02-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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