SIB411DK-T1-E3

SiB411DK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V a -9 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 6 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC-75-6L-Single S 1 D 2 Marking Code D G 3 6 G D BBX Part # code 5 S D 1.60 mm S XXX Lot Traceability and Date code 1.60 mm 4 D P-Channel MOSFET Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation ID TJ, Tstg Operating Junction and Storage Temperature Range d, e V - 9a - 2b, c 13 8.4 IS PD Unit - 9a - 8.9a - 4.8b, c - 3.8b, c - 15 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) Limit - 20 ±8 2.4b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 74335 S-80515-Rev. C, 10-Mar-08 www.vishay.com 1 SiB411DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 2.2 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V - 18 15 µA A VGS = - 4.5 V, ID = - 3.3 A 0.055 0.066 VGS = - 2.5 V, ID = - 2.8 A 0.077 0.094 VGS = - 1.8 V, ID = - 0.77 A 0.107 0.130 VDS = - 10 V, ID = - 3.3 A 9.5 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 470 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 95 65 VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A 10 15 6 9 VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A 0.9 f = 1 MHz 7.5 nC 1.4 td(on) Ω 10 15 40 60 45 70 tf 75 115 td(on) 5 10 10 15 VDD = - 10 V, RL = 2.1 Ω ID ≅ - 4.8 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) VDD = - 10 V, RL = 2.1 Ω ID ≅ - 4.8 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 25 40 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD -9 15 IS = - 3.8 A, VGS = 0 V - 0.85 - 1.2 A V Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 3.8 A, di/dt = 100 A/µs, TJ = 25 °C 15 5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74335 S-80515-Rev. C, 10-Mar-08 SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 2.0 2.5 V VGS = 5 thru 3 V 1.6 ID - Drain Current (A) I D - Drain Current (A) 12 9 2V 6 3 1.2 25 °C 0.8 0.4 1.5 V TC = 125 °C - 55 °C 0 0.0 0.5 1.0 1.5 0.0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.20 700 VGS = 1.8 V 600 0.15 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.6 0.10 VGS = 2.5 V Ciss 500 400 300 200 0.05 VGS = 4.5 V Coss 100 Crss 0 0.00 0 3 6 9 12 0 15 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 20 1.6 ID = 4.8 A ID = 3.3 A 1.4 6 4 VGS = 16 V 2 (Normalized) VDS = 10 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 VGS = 4.5 V, 2.5 V, 1.8 V 1.2 1.0 0.8 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74335 S-80515-Rev. C, 10-Mar-08 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Cu rrent (A) 100 10 TJ = 150 °C TJ = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1 0.17 0.14 0.11 TJ = 125 °C 0.08 TJ = 25 °C 0.05 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 20 ID = 250 µA 0.8 15 Power (W) VGS(th) (V) 0.7 0.6 10 0.5 5 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 1s 10 s DC 0.1 BVDSS limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74335 S-80515-Rev. C, 10-Mar-08 SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 15 14 12 12 Power (W) I D - Drain Current (A) 10 Package Limited 8 6 9 6 4 3 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74335 S-80515-Rev. C, 10-Mar-08 www.vishay.com 5 SiB411DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74335. www.vishay.com 6 Document Number: 74335 S-80515-Rev. C, 10-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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