SIB412DK-T1-E3

New Product SiB412DK Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 9a 0.040 at VGS = 2.5 V 9a 0.054 at VGS = 1.8 V a 9 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 6.14 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices D • DC/DC Converter PowerPAK SC-75-6L-Single 1 D Marking Code 2 D 3 6 G D 5 G XXX Lot Traceability and Date code S D 1.60 mm AAX Part # code S 1.60 mm S 4 Ordering Information: SiB412DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit 20 ±8 9a 9a 6.6b, c 5.29b, c 20 9a 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t≤5s RthJA 41 51 Maximum Junction-to-Ambientb, f °C/W Steady State RthJC 7.5 9.5 Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 70439 S-80515-Rev. C, 10-Mar-08 www.vishay.com 1 New Product SiB412DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 20.9 mV/°C - 2.82 0.35 1 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 VDS ≤ 5 V, VGS = 4.5 V 15 µA A VGS = 4.5 V, ID = 6.6 A 0.028 0.034 VGS = 2.5 V, ID = 5.5 A 0.033 0.040 VGS = 1.8 V, ID = 1.8 A 0.045 0.054 VDS = 10 V, ID = 6.6 A 23 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 535 VDS = 10 V, VGS = 0 V, f = 1 MHz 50 VDS = 10 V, VGS = 5 V, ID = 6.6 A VDS = 10 V, VGS = 4.5 V, ID = 6.6 A td(off) 6.77 10.16 6.14 9.21 0.96 nC 0.96 f = 1 MHz td(on) tr pF 85 VDD = 10 V, RL = 1.89 Ω ID ≅ 5.3 A, VGEN = 4.5 V, Rg = 1 Ω tf Ω 3.6 6.6 9.9 16 24 50 75 14 21 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 9 15 IS = 3.2 A, VGS = 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 9.82 14.7 ns Body Diode Reverse Recovery Charge Qrr 3.47 5.2 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 3.2 A, di/dt = 100 A/µs, TJ = 25 °C 6.46 3.36 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70439 S-80515-Rev. C, 10-Mar-08 New Product SiB412DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 VGS = 5 thru 2 V 4 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 1.5 V 8 4 3 2 TJ = 25 °C TJ = 125 °C 1 VGS = 1 V TJ = - 55 °C 0 0.0 0.6 1.2 1.8 2.4 0 0.0 3.0 0.4 VDS - Drain-to-Source Voltage (V) 0.8 1.6 2.0 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.100 800 0.075 600 C - Capacitance (pF) R DS(on) - D to S On-Resistance (Ω) 1.2 VGS = 1.8 V 0.050 VGS = 2.5 V Ciss 400 0.025 200 VGS = 4.5 V Coss 0.000 Crss 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.8 5 1.5 4 3 VDS = 16 V 2 1 1.2 (Normalized) VDS = 10 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V, ID = 6.6 A VGS = 2.5 V, ID = 5.5 A VGS = 1.8 V, ID = 1.80 A 0.9 0.6 0.3 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70439 S-80515-Rev. C, 10-Mar-08 7 8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiB412DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 10 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 6.6 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 0.06 TA = 125 °C 0.04 0.02 TA = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 20 0.8 0.6 Power (W) VGS(th) (V) 15 ID = 250 µA 0.4 5 0.2 0.0 - 50 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by R DS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 70439 S-80515-Rev. C, 10-Mar-08 New Product SiB412DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 18 16 12 12 Power (W) I D - Drain Current (A) 15 9 8 6 4 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70439 S-80515-Rev. C, 10-Mar-08 www.vishay.com 5 New Product SiB412DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70439. www.vishay.com 6 Document Number: 70439 S-80515-Rev. C, 10-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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