SIB413DK-T1-GE3

New Product SiB413DK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, f 0.075 at VGS = - 4.5 V -9 0.143 at VGS = - 2.5 V - 7.8 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area Qg (Typ.) 4.56 nC RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC-75-6L-Single S 1 D Marking Code 2 D 6 D 5 1.60 mm Part # code XXX Lot Traceability and Date code S D S G BCX 3 G 1.60 mm 4 D P-Channel MOSFET Ordering Information: SiB413DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID TJ, Tstg Operating Junction and Storage Temperature Range c, d V - 4.5a, b - 3.7a, b 12 - 9a - 2a, b 13 8.4 IS PD Unit - 9a - 8.6 IDM Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) Limit - 20 ± 12 2.4a, b 1.6a, b - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 105 °C/W. f. Based on TC = 25 °C. Document Number: 70441 S-80515-Rev. C, 10-Mar-08 www.vishay.com 1 New Product SiB413DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V - 18.7 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.5 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea VDS ≤ 5 V, VGS = - 4.5 V RDS(on) gfs 2.56 - 0.6 12 µA A VGS = - 4.5 V, ID = - 6.5 A 0.062 0.075 VGS = - 2.5 V, ID = - 1.8 A 0.119 0.143 VDS = - 10 V, ID = - 6.5 A 8 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 357 VDS = - 10 V, VGS = 0 V, f = 1 MHz 93 VDS = - 10 V, VGS = - 5 V, ID = - 6.5 A 5.09 7.63 4.56 6.84 pF 63 VDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A 0.77 nC 0.93 f = 1 MHz td(on) VDD = - 10 V, RL = 2.70 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) tf Ω 8.1 20.5 30.75 46 69 20 30 6.5 9.75 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -9 12 IS = - 3.2 A, VGS = 0 V IF = - 3.2 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 19.3 29 ns 7.6 11.4 nC 7.1 12.2 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70441 S-80515-Rev. C, 10-Mar-08 New Product SiB413DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 12 VGS = 5 thru 3 V 2.4 ID - Drain Current (A) I D - Drain Current (A) 9 VGS = 2.5 V 6 1.8 1.2 TJ = 25 °C 3 0.6 TJ = 125 °C VGS = 2 V TJ = - 55 °C 0.0 0.0 0 0 1 2 3 4 5 0.6 Output Characteristics 2.4 Transfer Characteristics 0.5 600 500 0.4 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.3 VGS = 2.5 V 0.2 400 300 200 Coss 0.1 100 Crss VGS = 4.5 V 0.0 0 0 3 6 9 12 15 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.8 5 ID = 6.5 A VGS = 4.5 V, ID = 6.5 A 1.5 VDS = 10 V 3 VDS = 16 V 2 (Normalized) 4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.2 1.2 VGS = 2.5 V, ID = 1.8 A 0.9 0.6 1 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 70441 S-80515-Rev. C, 10-Mar-08 5 6 0.3 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiB413DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 10 1 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.5 A 0.1 0.01 0.001 0.0 0.20 TJ = 25 °C 0.15 TA = 125 °C 0.10 TA = 25 °C 0.05 0.00 0.3 0.6 0.9 1.2 1.5 0 1.8 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage 1.3 20 1.2 15 1.1 Power (W) VGS(th) (V) ID = 250 µA 1.0 10 5 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 C Single Pulse DC 0.01 BVDSS limited 0.001 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 70441 S-80515-Rev. C, 10-Mar-08 New Product SiB413DK Vishay Siliconix 12 16 9 12 Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 8 4 3 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70441 S-80515-Rev. C, 10-Mar-08 www.vishay.com 5 New Product SiB413DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70441. www.vishay.com 6 Document Number: 70441 S-80515-Rev. C, 10-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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