SIB417AEDK-T1-GE3

SiB417AEDK Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. ID (A) 0.032 at VGS = - 4.5 V - 9a 0.045 at VGS = - 2.5 V - 9a 0.063 at VGS = - 1.8 V 0.120 at VGS = - 1.5 V - 9a - 8.8 0.230 at VGS = - 1.2 V - 6.4 g Qg (Typ.) 11.3 nC PowerPAK SC-75-6L-Single APPLICATIONS 1 D 2 Smart Phones, and Tablet PCs - Low Voltage Drop - Space Savings 3 G D 5 S D 1.60 mm S S • Load Switch for Portable Devices, D 6 • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Protection 2500 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Marking Code 1.60 mm G 4 BNX Part # code Ordering Information: SiB417AEDK-T1-GE3 (Lead (Pb)-free and Halogen-free) XXX Lot Traceability and Date code D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Unit V a ID IDM Pulsed Drain Current (t = 300 µs) Limit -8 ±5 IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e -9 - 9a - 7.2b, c - 5.7b, c - 15 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t5s 41 51 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 7.5 9.5 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. g. Based on TC = 25 °C. Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB417AEDK Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient ID = - 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS VDS = 0 V, VGS = ± 5 V Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance a a gfs Forward Transconductance mV/°C 2.1 - 0.35 -1 V ± 20 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 4.5 V RDS(on) V - 6.1 - 15 µA A VGS = - 4.5 V, ID = - 3 A 0.0265 0.0320 VGS = - 2.5 V, ID = - 3 A 0.0360 0.0450 VGS = - 1.8 V, ID = - 1 A 0.0500 0.0630 VGS = - 1.5 V, ID = - 0.5 A 0.0600 0.1200 VGS = - 1.2 V, ID = - 0.5 A 0.1000 0.2300 VDS = - 4 V, ID = - 7.4 A 18  S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 878 VDS = - 4 V, VGS = 0 V, f = 1 MHz 415 VDS = - 4 V, VGS = - 5 V, ID = - 7.4 A 12.3 18.5 11.3 17 735 VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A VDD = - 4 V, RL = 0.68  ID  - 5.9 A, VGEN = - 4.5 V, Rg = 1  tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 1.35 nC 3.42 f = 1 MHz td(on) Turn-On Delay Time pF 1.3 6.5 13 19 29 18 27 32 48 19 29  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -9 - 15 IS = - 5.9 A, VGS = 0 V IF = - 5.9 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 32 48 ns 13 20 nC 14 18 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 0.015 TJ = 25 °C 10-3 10-4 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.012 0.009 0.006 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 0.003 10-8 10-9 0.000 0 2 4 5 7 9 0 3 6 9 12 VGS - Gate-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current Gate Source Voltage vs. Gate Current 15 1 VGS = 5V thru 2V 0.8 ID - Drain Current (A) ID - Drain Current (A) 12 9 VGS = 1.5 V 6 3 0.6 0.4 TC = 25 °C 0.2 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0 0.5 1 1.5 2 0 0.25 0.5 0.75 1 1.25 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.2 1500 VGS = 1.2 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1200 0.15 VGS = 1.5 V 0.1 VGS = 1.8 V VGS = 2.5 V 0.05 Ciss 900 600 Coss Crss 300 VGS = 4.5 V 0 0 0 3 6 9 12 15 ID - Drain Current (A) 0 2 On-Resistance vs. Drain Current and Gate Voltage Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 4 6 8 VDS - Drain-to-Source Voltage (V) For technical questions, contact: pmostechsupport@vishay.com Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 1.4 ID = 3 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 7.4 A 4 VDS = 4 V 3 VDS = 2 V 2 VDS = 6.4 V 1 0 VGS = 4.5 V 1.27 VGS = 2.5 V 1.14 1.01 0.88 0.75 0 3.5 7 10.5 14 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.120 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 3 A 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.090 0.060 TJ = 125 °C TJ = 25 °C 0.030 0.000 0.0 0.3 0.6 0.9 1.2 0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.7 ID = 250 μA 0.6 Power (W) VGS(th) (V) 15 0.5 0.4 10 5 0.3 0.2 - 50 - 25 www.vishay.com 4 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 Limited by RDS(on)* 100 μs 1 ms 10 ms 100 ms 10 s, 1 s DC 1 0.1 15 ID - Drain Current (A) ID - Drain Current (A) 10 10 5 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 0 10 0 25 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 50 75 100 125 150 125 150 TC - Case Temperature (°C) Current Derating** Safe Operating Area, Junction-to-Case 1.5 16 1.2 0.9 Power (W) Power (W) 12 0.6 8 4 0.3 0.0 0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Power Junction-to-Ambient 150 0 25 50 75 100 TC - Case Temperature (°C) Power Junction-to-Case ** The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB417AEDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63899. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63899 S12-2333-Rev. A, 01-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000