SIB433EDK-T1-GE3

SiB433EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 Qg (Typ.) 7.6 nC PowerPAK SC-75-6L-Single • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 1 D D 3 6 G D 5 S D 1.60 mm S • Load Switch for Portable Devices • Charger Switch for Portable Devices 2 S G Marking Code 1.60 mm 4 R BLX Part # code XXX Lot Traceability and Date code Ordering Information: SiB433EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Limit - 20 ±8 Unit V - 9a - 9a - 5.3b, c - 4.3b, c - 20 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB433EDK Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage IDSS Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance a Forward Transconductancea - 13 ID = - 250 µA VDS = VGS, ID = - 250 µA V mV/°C 2.5 - 0.4 -1 VDS = 0 V, VGS = ± 8 V ±6 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C µA - 10 ID(on) VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.7 A 0.047 0.058 RDS(on) VGS = - 2.5 V, ID = - 3.2 A 0.064 0.077 VGS = - 1.8 V, ID = - 1.5 A 0.085 0.105 VDS = - 10 V, ID = - 3.7 A 12 gfs V - 15 A  S b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 10 V, VGS = - 8 V, ID = - 5.3 A VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A Turn-On Delay Time 0.4 VDD = - 10 V, RL = 2.3  ID  - 4.3 A, VGEN = - 4.5 V, Rg = 1  td(off) Fall Time Turn-On Delay Time 4 0.2 0.3 1 1.5 4 6 2 3 td(on) 0.09 0.14 0.4 0.6 5.2 7.8 2.3 3.5 VDD = - 10 V, RL = 2.3  ID  - 4.3 A, VGEN = - 8 V, Rg = 1  td(off) Turn-Off Delay Time tf Fall Time 2 tf tr Rise Time 12 nC 3.1 f = 1 MHz tr Turn-Off Delay Time 21 0.8 td(on) Rise Time 14 7.6 k µs Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD -9 - 20 IS = - 4.3 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 20 40 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 13 17 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 1.5 10-3 IGSS - Gate Current (mA) 1.2 IGSS - Gate Current (A) TJ = 25 °C 0.9 0.6 10-4 TJ = 150 °C 10-5 TJ = 25 °C 10-6 10-7 0.3 10-8 0.0 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) 15 10-9 0 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 20 10 16 8 VGS = 5 V thru 2.5 V I D - Drain Current (A) I D - Drain Current (A) 3 12 VGS = 2 V 8 VGS = 1.5 V 4 6 4 TC = 25 °C 2 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 VDS - Drain-to-Source Voltage (V) 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.18 2.0 8 VGS = 1.8 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.15 0.12 VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 0.03 0.00 ID = 5.3 A VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 2 0 0 4 8 12 ID - Drain Current (A) 16 On-Resistance vs. Drain Current Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 20 0 3 6 9 12 Qg - Total Gate Charge (nC) 15 Gate Charge For technical support, please contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1.4 VGS = 4.5 V, 2.5 V; ID = 3.7 A 1.3 TJ = 150 °C I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.5 1.2 1.1 VGS = 1.8 V; ID = 1.5 A 1.0 0.9 10 TJ = 25 °C 1 0.8 0.7 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 0.1 0.0 150 On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Soure-Drain Diode Forward Voltage 0.18 0.8 0.15 ID = 3.7 A; TJ = 25 °C ID = 1.5 A; TJ = 125 °C 0.7 ID = 250 µA 0.12 ID = 3.7 A; TJ = 125 °C 0.09 0.06 0.6 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.2 0.5 ID = 1.5 A; TJ = 25 °C 0.4 0.03 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.3 - 50 5.0 - 25 0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage 100 20 Limited by RDS(on)* I D - Drain Current (A) Power (W) 15 10 10 100 µs 1 ms 1 10 ms TA = 25 °C Single Pulse 100 ms 1 s, 10 s 0.1 5 DC BVDSS Limited 0 0.001 0.01 0.1 1 Pulse (s) 10 100 Single Pulse Power, Junction-to-Ambient www.vishay.com 4 1000 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB433EDK Vishay Siliconix 15 15 12 12 Package Limited 9 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6 3 9 6 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 TC - Case Temperature (°C) 150 Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 For technical support, please contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB433EDK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/ tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65652. www.vishay.com 6 For technical support, please contact: pmostechsupport@vishay.com Document Number: 65652 S12-0979-Rev. B, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000