SIB437EDKT-T1-GE3

SiB437EDKT Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package with ultra-thin 0.6 mm height - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Typical ESD Performance 2000 V • Built in ESD Protection with Zener Diode • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 10.5 nC Thin PowerPAK SC-75-6L-Single APPLICATIONS D 6 • Load Switch for Portable Devices • Load Switch for Low Voltage Gate Drive 1 D D 2 Marking Code 3 5 S G G D 0.60 mm S 1.60 mm Part # code S 4 R BMX 1.60 mm XXX Lot Traceability and Date code D Ordering Information: SiB437EDKT-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak ID IS PD TJ, Tstg Temperature)d, e Limit -8 ±5 Unit V - 9a - 9a - 7.5b, c - 6b, c - 25 - 9a - 2b, c 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 41 7.5 Maximum 51 9.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The Thin PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 1 SiB437EDKT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA -8 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea a Forward Transconductance RDS(on) gfs V -2 mV/°C 2.2 - 0.35 - 0.7 VDS = - 8 V, VGS = 0 V -1 VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 4.5 V V ±5 - 15 µA A VGS = - 4.5 V, ID = - 3 A 0.028 0.034 VGS = - 1.8 V, ID = - 1 A 0.050 0.063 VGS = - 1.5 V, ID = - 0.5 A 0.060 0.084 VGS = - 1.2 V, ID = - 0.5 A 0.100 0.180 VDS = - 4 V, ID = - 3 A 14  S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 10.5 VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A td(off) nC 400 800  90 180 170 340 690 1380 630 1260 1.5 3.3 f = 1 MHz td(on) tr 16 VDD = - 4 V, RL = 0.7  ID  - 6 A, VGEN = - 4.5 V, Rg = 1  tf 80 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -9 - 25 IS = - 6 A, VGS = 0 V IF = - 6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 30 60 ns 12 25 nC 12 18 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 6.000 1.E-02 1.E-03 5.000 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.E-04 4.000 3.000 TJ = 25 °C 2.000 1.E-05 TJ = 150 °C 1.E-06 TJ = 25 °C 1.E-07 1.E-08 1.000 1.E-09 0.000 1.E-10 0 2 4 6 8 10 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 5 25 VGS = 5 V thru 2.5 V 4 20 ID - Drain Current (A) ID - Drain Current (A) VGS = 2 V 15 10 VGS = 1.5 V 3 TC = 25 °C 2 TC = 125 °C 1 5 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.5 6 VGS - Gate-to-Source Voltage (V) 0.20 0.16 RDS(on) - On-Resistance (Ω) 0.3 VGS = 1.5 V 0.12 VGS = 1.2 V VGS = 1.8 V 0.08 VGS = 4.5 V 0.04 ID = 7.4 A 5 VDS = 2 V 4 VDS = 4 V 3 VDS = 6.4 V 2 1 0 0.00 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 25 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.3 100 VGS = 4.5 V; ID = 3 A RDS(on) - On-Resistance (Normalized) IS - Source Current (A) VGS = 1.8 V; ID = 1 A 1.2 VGS = 1.5 V; ID = 0.5 A 1.1 1.0 VGS = 1.2 V; ID = 0.5 A 10 TJ = 150 °C TJ = 25 °C 1 0.9 0.8 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Soure-Drain Diode Forward Voltage 1.2 0.7 0.14 0.6 ID = 3 A; TJ = 125 °C 0.10 ID = 250 μA VGS(th) (V) RDS(on) - On-Resistance (Ω) 0.12 0.08 ID = 0.5 A; TJ = 125 °C 0.06 0.5 0.4 ID = 3 A; TJ = 25 °C 0.04 ID = 0.5 A; TJ = 25 °C 0.3 0.02 0.00 0.0 1.0 2.0 3.0 4.0 0.2 - 50 5.0 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 100 20 Limited by RDS(on)* ID - Drain Current (A) Power (W) 100 μs 10 15 10 1 ms 10 ms 1 100 ms 1 s, 10 s DC 0.1 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 SiB437EDKT Vishay Siliconix 20 15 16 12 Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 Package Limited 8 4 9 6 3 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 www.vishay.com 5 SiB437EDKT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67402. www.vishay.com 6 Document Number: 67402 S11-0235-Rev. A, 14-Feb-11 Package Information www.vishay.com Vishay Siliconix Case Outline for Thin PowerPAK® SC-75 Single A D DIM. E A Pin 1 Dot by Marking A1 C Z Detail Z E1 Pin 5 K1 0.60 0.65 0.0206 0.024 0.026 A1 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.0010 D 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 0.020 BSC 0.007 typ. K1 0.275 typ. 0.011 typ. K2 0.200 typ. 0.008 typ. K3 0.255 typ. 0.010 typ. K4 0.300 typ. 0.012 typ. L 0.15 0.25 0.35 0.006 0.010 0.014 ECN: T16-0083-Rev. B, 14-Mar-16 DWG: 5999 Pin 4 K2 Note • All dimensions are in millimeter • Package outline exculsive of mold flash and metal burr • Package outline inclusive of plating Backside View of Single Revison: 14-Mar-16 0.525 0.50 BSC K Pin 6 K3 MAX. 0.180 typ. E3 D1 NOM. e Pin 3 D2 MIN. L Pin 2 MAX. K b e Pin 1 INCHES NOM. E2 K4 Z MILLIMETERS MIN. 1 Document Number: 67873 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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