SIB452DK-T1-GE3

SiB452DK www.vishay.com Vishay Siliconix N-Channel 190 V (D-S) MOSFET FEATURES PowerPAK® SC-75-6L Single S 4 6 1. S 7 m m 1 m m 1.6 Top View D 5 • TrenchFET® power MOSFET D 6 • New thermally enhanced PowerPAK® SC-75 package - Small footprint area - Low on-resistance 2 3 D G Bottom View 1 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • Boost converter for portable devices Marking code: AC PRODUCT SUMMARY VDS (V) 190 RDS(on) max. () at VGS = 4.5 V 2.4 RDS(on) max. () at VGS = 2.5 V 2.6 RDS(on) max. () at VGS = 1.8 V 6 Qg typ. (nC) 2.3 ID (A) a 1.5 Configuration G S N-Channel MOSFET Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SC-75 SiB452DK-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current Continuous source-drain diode current Maximum power dissipation ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e IS PD TJ, Tstg LIMIT 190 ± 16 1.5 1.24 0.67 b, c 0.53 b, c 1.5 1.5 0.67 b, c 13 8.4 2.4 b, c 1.6 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t5s Steady state SYMBOL RthJA RthJC TYPICAL 41 7.5 MAXIMUM 51 9.5 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 105 °C/W S-81724-Rev. A, 04-Aug-08 Document Number: 68832 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB452DK www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 190 - - V - 202 - - -3.2 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS = 190 V, VGS = 0 V - - 1 VDS = 190 V, VGS = 0 V, TJ = 55 °C - - 10 ID(on) VDS  5 V, VGS = 4.5 V 1.5 - - VGS = 4.5 V, ID = 0.5 A - 1.8 2.4 RDS(on) VGS = 2.5 V, ID = 0.45 A - 1.9 2.6 VGS = 1.8 V, ID = 0.2 A - 2 6 VDS = 10 V, ID = 0.5 A - 3 - - 135 - VDS = 50 V, VGS = 0 V, f = 1 MHz - 9 - - 6 - gfs μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 95 V, VGS = 10 V, ID = 0.7 A pF - 4.3 6.5 - 2.3 3.5 - 0.4 - - 1 - - 2.2 - - 12 20 - 16 25 - 30 45 tf - 15 25 td(on) - 5 10 - 10 15 - 10 15 - 10 15 - - 1.5 - - 1.5 - 0.8 1.2 V - 40 60 ns - 45 70 nC - 20 - - 19 - VDS = 95 V, VGS = 4.5 V, ID = 0.7 A f = 1 MHz td(on) tr td(off) tr td(off) VDD = 95 V, RL = 190  ID  0.5 A, VGEN = 4.5 V, Rg = 1  VDD = 95 V, RL = 190  ID  0.5 A, VGEN = 10 V, Rg = 1  tf nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current TC = 25 °C IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb IS = 0.5 A, VGS = 0 V IF = 0.5 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing         Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S-81724-Rev. A, 04-Aug-08 Document Number: 68832 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB452DK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.5 VGS = 5 thru 2 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 1.2 0.9 0.6 0.6 0.4 TC = 25 °C 0.2 0.3 TC = 125 °C VGS = 1 V 0 1 2 3 4 TC = - 55 °C 0.0 0.0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 2.0 Transfer Characteristics 4.0 210 3.5 180 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) Output Characteristics 3.0 2.5 VGS = 1.8 V 1.0 VGS = 2.5 V 2.0 Ciss 150 120 90 60 VGS = 4.5 V 1.5 30 1.0 0.0 Coss Crss 0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 2.4 2.0 VDS = 95 V 6 VDS = 152 V 4 2 VGS = 4.5 V, 2.5 V; ID = 0.5 A (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 0.7 A 8 1.6 1.2 VGS = 1.8 V; ID = 0.2 A 0.8 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge S-81724-Rev. A, 04-Aug-08 4 5 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68832 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB452DK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 8 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 0.5 A 1 TJ = 25 °C TJ = 150 °C 0.1 6 TJ = 125 °C 4 2 TJ = 25 °C 0 0.01 0.0 0.2 0.4 0.6 0.8 0 1.0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 20 1.2 15 ID = 250 µA Power (W) VGS(th) (V) 1.1 1.0 0.9 0.8 10 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) Limited by RDS(on)* IDM Limited 1 100 µs ID(on) Limited 0.1 1 ms 10 ms 100 ms 1 s, 10 s 0.01 TA = 25 °C Single Pulse DC BVDSS Limited 0.001 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S-81724-Rev. A, 04-Aug-08 Document Number: 68832 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB452DK www.vishay.com Vishay Siliconix 2.0 15 1.6 12 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.2 9 0.8 6 0.4 3 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S-81724-Rev. A, 04-Aug-08 Document Number: 68832 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiB452DK www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 80 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68832. S-81724-Rev. A, 04-Aug-08 Document Number: 68832 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.500 (0.02) 0.250 (0.01) 0.400 (0.016) 0.300 (0.012) 0.180 (0.007) 0.370 (0.015) 1.700 (0.067) 1.100 0.620 (0.024) (0.043) 2.000 (0.079) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 1 0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70488 Revision: 21-Jan-08 www.vishay.com 13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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