SIB911DK-T1-E3

New Product SiB911DK Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.295 at VGS = - 4.5 V - 2.6 0.420 at VGS = - 2.5 V - 2.2 0.560 at VGS = - 1.8 V - 1.9 Qg (Typ.) 1.6 nC • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices PowerPAK SC75-6L-Dual S1 S2 1 S1 Marking Code 2 G1 3 D2 D1 D1 6 DAX Part # code D2 4 S2 G2 Lot Traceability and Date code G2 5 1.60 mm G1 XXX 1.60 mm D1 D2 P-Channel MOSFET P-Channel MOSFET Ordering Information: SiB911DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Limit - 20 ±8 - 2.6 - 2.1 ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d V - 1.5a, b - 1.2a, b -5 - 2.6 IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Unit - 0.9a, b 3.1 2 1.1a, b 0.7a, b - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 90 32 Maximum 115 40 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 125 °C/W. f. Based on TC = 25 °C. Document Number: 74475 S-80515-Rev. B, 10-Mar-08 www.vishay.com 1 New Product SiB911DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 1.9 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V RDS(on) V - 19 5 µA A VGS = - 4.5 V, ID = - 1.5 A 0.242 0.295 VGS = - 2.5 V, ID = - 1.2 A 0.345 0.420 VGS = - 1.8 V, ID = - 0.18 A 0.455 0.560 VDS = - 10 V, ID = - 1.5 A 3 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 115 VDS = - 10 V, VGS = 0 V, f = 1 MHz pF 30 20 VDS = - 10 V, VGS = - 8 V, ID = - 1.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 1.7 A 2.6 4.0 1.6 2.5 0.3 nC 0.5 f = 1 MHz td(on) VDD = - 10 V, RL = 7.1 Ω ID ≅ - 1.4 A, VGEN = - 4.5 V, Rg = 1 Ω tr td(off) Ω 7 12 20 45 70 10 15 tf 31 50 td(on) 3 10 25 40 VDD = - 10 V, RL = 7.1 Ω ID ≅ - 1.4 A, VGEN = - 8 V, Rg = 1 Ω tr td(off) tf 10 15 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 2.6 5 IS = - 1.4 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr 26 50 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 1.4 A, di/dt = 100 A/µs, TJ = 25 °C 19 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74475 S-80515-Rev. B, 10-Mar-08 New Product SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 1.0 3V VGS = 5 thru 3.5 V 0.8 2.5 V I D - Drain Current (A) I D - Drain Current (A) 4 3 2V 2 1.5 V 0.6 0.4 TC = 125 °C 0.2 1 25 °C - 55 °C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.8 2.0 200 0.7 VGS = 1.8 V 160 0.6 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 VGS = 2.5 V 0.5 0.4 Ciss 120 80 Coss 40 VGS = 4.5 V 0.3 Crss 0.2 0 0 1 2 3 4 5 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.5 A ID = 1.7 A 4 VDS = 16 V 2 (Normalized) 1.4 VDS = 10 V 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 1.2 1.0 0.8 0 0.0 0.5 Document Number: 74475 S-80515-Rev. B, 10-Mar-08 1.0 1.5 2.0 2.5 3.0 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.8 ID = 1.5 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.7 TJ = 150 °C 1 TJ = 25 °C 0.6 125 °C 0.5 0.4 25 °C 0.3 0.2 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-to-Source Voltage Soure-Drain Diode Forward Voltage 8 0.8 0.7 ID = 250 µA 6 Power (W) VGS(th) (V) 2 VGS - Gate-to-Source Voltage (V) 0.6 0.5 4 2 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 10 I D - Drain Current (A) Limited by R DS(on)* IDM Limited 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74475 S-80515-Rev. B, 10-Mar-08 New Product SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 4 2.5 Power Dissipation (W) ID - Drain Current (A) 3 2.0 1.5 1.0 2 1 0.5 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74475 S-80515-Rev. B, 10-Mar-08 www.vishay.com 5 New Product SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74475. www.vishay.com 6 Document Number: 74475 S-80515-Rev. B, 10-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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