SIDR220EP-T1-RE3

SiDR220EP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8DC D D 6 5 D 7 • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Top side cooling feature provides additional venue for thermal transfer • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 S 1 2 S 3 4 S S G 6.1 5m m m 1 5 m .15 Top View Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration • • • • • • 25 0.00058 0.00082 61 415 Single D Synchronous rectification High power density DC/DC Synchronous buck converter OR-ing Load switching Battery management G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR220EP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed drain current (t = 100 μs) IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 25 +16 / -12 415 347 92.8 b, c 77.6 b, c 500 136 6.8 b, c 60 180 150 105 6.25 b, c 4 b, c -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 15 20 Maximum junction-to-case (drain) Steady state RthJC °C/W 0.8 1 Maximum junction-to-case (source) Steady state RthJC 1.1 1.4 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S21-0498-Rev. A, 17-May-2021 Document Number: 63083 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR220EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 25 - - ΔVDS/TJ ID = 10 mA - 21 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -4.8 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1 - 2.1 V Gate-source leakage IGSS VDS = 0 V, VGS = +16 / -12 V - - 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 25 V, VGS = 0 V - - 1 VDS = 25 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 20 A - 0.00048 0.00058 VGS = 4.5 V, ID = 20 A - 0.00065 0.00082 VDS = 15 V, ID = 20 A - 110 - - 10 850 - - 3360 - - 720 - - 134 200 - 61 92 VDS = 10 V, VGS = 4.5 V, ID = 20 A - 24 - - 9.2 - f = 1 MHz 0.1 0.38 0.75 - 19 38 - 24 48 - 53 105 μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A td(on) tr td(off) VDD = 10 V, RL = 0.5 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω tf - 9 18 td(on) - 51 100 - 95 190 - 47 94 - 16 32 tr td(off) VDD = 10 V, RL = 0.5 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C - - 136 - - 500 - 0.71 1.1 V - 63 126 ns - 87 174 nC - 27 - - 36 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0498-Rev. A, 17-May-2021 Document Number: 63083 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR220EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 300 10000 300 10000 VGS = 10 V thru 4 V 120 100 1000 180 1st line 2nd line 1000 VGS = 3 V 180 2nd line ID - Drain Current (A) 240 1st line 2nd line 120 100 TC = 25 °C 60 60 TC = 125 °C TC = -55 °C VGS = 2 V thru 0 V 0 0 10 0 0.5 1.0 1.5 2.0 10 0 2.5 1 2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 100 000 VGS = 4.5 V 1000 1st line 2nd line 0.0006 VGS = 10 V 0.0005 100 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance (Ω) 4 VDS - Drain-to-Source Voltage (V) 0.0008 0.0007 3 10000 Ciss 10 000 1000 1st line 2nd line 2nd line ID - Drain Current (A) 240 Coss Crss 1000 100 0.0004 0.0003 100 10 20 40 60 80 10 0 100 5 10 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 10000 8 1000 1st line 2nd line 6 VDS = 5 V, 10 V, 15 V 4 100 2 0 10 27 54 81 108 135 2nd line RDS(on) - On-Resistance (Normalized) 1.6 ID = 20 A 0 25 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 10000 1.4 VGS = 10 V, 20 A 1000 1.2 VGS = 4.5 V, 20 A 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0498-Rev. A, 17-May-2021 1st line 2nd line 0 Document Number: 63083 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR220EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.4 10000 10000 0.1 2nd line VGS(th) - Variance (V) TJ = 150 °C 1 1st line 2nd line 1000 TJ = 25 °C 100 0.1 1000 -0.2 1st line 2nd line 2nd line IS - Source Current (A) 10 ID = 5 mA -0.5 100 ID = 250 μA -0.8 0.01 10 0 0.2 0.4 0.6 0.8 1.0 -1.1 1.2 10 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.0030 10000 1000 10000 ID = 20 A 0.0024 1st line 2nd line 0.0012 100 TJ = 125 °C 1000 2nd line P - Power (W) 1000 0.0018 600 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 800 400 100 0.0006 200 TJ = 25 °C 10 0 0 2 4 6 8 0 0.001 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 2nd line ID - Drain Current (A) 100 10000 IDM limited 100 μs ID limited 10 1 ms Limited by RDS(on)a 10 ms 1st line 2nd line 1000 100 ms 1 1s 100 10s DC 0.1 TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S21-0498-Rev. A, 17-May-2021 Document Number: 63083 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR220EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 450 10000 1000 270 1st line 2nd line 2nd line ID - Drain Current (A) 360 180 100 90 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 200 3.5 10000 80 100 40 1000 2.1 1st line 2nd line 1000 120 2nd line P - Power (W) 2.8 1st line 2nd line 2nd line P - Power (W) 160 10000 1.4 100 0.7 0 10 0 25 50 75 100 125 150 175 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 175 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0498-Rev. A, 17-May-2021 Document Number: 63083 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR220EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.1 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA 0.01 0.0001 0.01 (t) 4. Surface mounted Single pulse 0.001 100 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain) Axis Title 1 10000 0.2 1000 0.1 0.05 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Source) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63083. S21-0498-Rev. A, 17-May-2021 Document Number: 63083 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000