SIDR390DP-T1-GE3

SiDR390DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D 6 5 D 7 • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Top side cooling feature provides additional venue for thermal transfer • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 S 1 2 S 3 4 S S G 6.1 5m m m 1 5 m .15 Top View Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration • • • • • • 30 0.00080 0.00115 48 100 a, g Single D Synchronous rectification High power density DC/DC Synchronous buck converter G OR-ing N-Channel MOSFET Load switching Battery management S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR390DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 30 +20 / -16 100 a 100 a 69.9 b, c 55.9 b, c 400 100 5.6 b, c 40 80 125 80 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t  10 s RthJA 15 20 Maximum junction-to-case (drain) Steady state RthJC °C/W 0.8 1 1.1 1.4 Maximum junction-to-case (source) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S17-1369-Rev. A, 04-Sep-17 Document Number: 75636 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR390DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - V - 17.5 - - -6.3 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 0.8 - 2 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 VDS  5 V, VGS = 10 V 50 - - VGS = 10 V, ID = 20 A - 0.00065 0.00080 VGS = 4.5 V, ID = 15 A - 0.00090 0.00115 VDS = 10 V, ID = 20 A - 110 - μA A  S Dynamic b Input capacitance Ciss - 10 180 - Output capacitance Coss - 3290 - Reverse transfer capacitance Crss - 306 - - 0.031 0.062 - 102 153 - 48 72 - 22 - - 4.7 - VDS = 15 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 20 A Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 15 V, VGS = 0 V - 105 - Gate resistance Rg f = 1 MHz 0.5 1.3 2.5 - 15 30 - 16 32 90 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) VDD = 15 V, RL = 0.75  ID  20 A, VGEN = 10 V, Rg = 1  pF nC  - 46 tf - 10 20 td(on) - 51 100 - 63 120 - 78 155 - 27 34 - - 100 - - 400 - 0.68 1.1 V - 68 135 ns - 98 180 nC - 29 - - 39 - tr td(off) VDD = 15 V, RL = 0.75  ID  20 A, VGEN = 4.5 V, Rg = 1  tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1369-Rev. A, 04-Sep-17 Document Number: 75636 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR390DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 250 VGS = 10 V thru 3 V 200 VGS = 3 V ID - Drain Current (A) ID - Drain Current (A) 160 120 80 TC = 25 °C 150 100 50 40 TC = 125 °C TC = - 55 °C VGS = 2 V 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 1.6 2.4 3.2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 15 000 0.0011 0.0010 12 000 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.8 VDS - Drain-to-Source Voltage (V) 0.0009 0.0008 0.0007 Ciss 9000 Coss 6000 3000 VGS = 10 V Crss 0 0.0006 0 16 32 48 ID - Drain Current (A) 64 0 80 5 10 20 25 30 Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.6 10 RDS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 15 VDS - Drain-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 0 0 21 42 63 84 105 VGS = 10 V ID = 20 A 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S17-1369-Rev. A, 04-Sep-17 150 Document Number: 75636 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR390DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.5 0.2 TJ = 150 °C VGS(th) - Variance (V) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 - 0.1 ID = 5 mA - 0.4 ID = 250 μA - 0.7 0.001 - 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 125 150 Axis Title 0.005 10000 200 ID = 20 A 150 0.002 TJ = 125 °C 1st line 2nd line 1000 0.003 2nd line Power (W) RDS(on) - On-Resistance (Ω) 0.004 100 100 50 0.001 TJ = 25 °C 0 0.001 0.000 0 2 4 6 8 0.01 0.1 10 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title RDS(on) Limited (1) 1000 10000 ID(on) Limited 100 µs 1000 1 ms 10 10 ms 100 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 IDM Limited 100 1s 10 s 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) DC BVDSSLimited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1369-Rev. A, 04-Sep-17 Document Number: 75636 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR390DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 350 10000 300 1000 2nd line Power (W) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 120 250 200 150 Package limited 90 60 100 100 100 30 50 0 0 10 0 25 50 75 100 125 10 0 150 25 50 75 100 125 150 TC - Case (Drain) Temperature (°C) 2nd line TC - Case (Drain) Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit  Axis Title 1 10000 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 0.01 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient S17-1369-Rev. A, 04-Sep-17 Document Number: 75636 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR390DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case (Drain) Axis Title Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd2nd lineline Normalized Thermal Transient Impedance, Junction-to-Case (Source)                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75636. S17-1369-Rev. A, 04-Sep-17 Document Number: 75636 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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