SiDR392DP
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Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK® SO-8DC
D
D 6
5
D
7
• TrenchFET® Gen IV power MOSFET
D
8
• Top side cooling feature provides additional
venue for thermal transfer
S
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
6.1
5m
m
1
m
5m
4
G
5.1
Top View
1
2
3 S S
S
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Bottom View
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V
Qg typ. (nC)
ID (A)
Configuration
•
•
•
•
•
•
30
0.00062
0.00093
59.7
100 a, g
Single
D
Synchronous rectification
High power density DC/DC
Synchronous buck converter
OR-ing
Load switching
Battery management
G
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8DC
SiDR392DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C)
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
PD
TJ, Tstg
LIMIT
30
+20 / -16
100 a
100 a
82 b, c
66 b, c
200
100
5.6 b, c
45
101
125
80
6.25 b, c
4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient b
t 10 s
RthJA
15
20
0.8
1
Maximum junction-to-case (drain)
Steady state
RthJC
°C/W
1.1
1.4
Maximum junction-to-case (source)
Steady state
RthJC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
g. TC = 25 °C
S18-0243-Rev. A, 26-Feb-18
Document Number: 76351
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR392DP
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VDS/TJ
ID = 10 mA
-
15
-
VGS(th) temperature coefficient
VGS(th)/TJ
ID = 250 μA
-
-5.3
-
Gate-source threshold voltage
VDS temperature coefficient
mV/°C
VGS(th)
VDS = VGS, ID = 250 μA
1
-
2.2
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = +20 / -16 V
-
-
100
nA
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 70 °C
-
-
15
VDS 10 V, VGS =10 V
20
-
-
A
VGS =10 V, ID = 20 A
-
0.00047
0.00062
VGS = 4.5 V, ID = 15 A
-
0.00071
0.00093
VDS = 15 V, ID = 30 A
-
125
-
-
9530
-
-
4280
-
-
626
-
-
125
188
μA
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
-
59.7
90
VDS = 15 V, VGS = 4.5 V, ID = 20 A
-
25.2
-
-
12.3
-
f = 1 MHz
0.1
0.4
0.8
-
17
35
-
23
50
-
41
80
tf
-
12
25
td(on)
-
40
80
-
66
135
-
50
100
-
35
70
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5 , ID 10 A,
VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5 , ID 10 A,
VGEN = 4.5 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current
ISM
Body diode voltage
VSD
TC = 25 °C
IS = 5 A, VGS = 0 V
-
-
100
-
-
200
-
0.7
1.1
A
V
Body diode reverse recovery time
trr
-
80
160
ns
Body diode reverse recovery charge
Qrr
-
144
290
nC
Reverse recovery fall time
ta
-
43
-
Reverse recovery rise time
tb
-
37
-
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0243-Rev. A, 26-Feb-18
Document Number: 76351
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR392DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
10000
120
VGS = 10 V thru 4 V
40
100
20
1000
80
TC = 25 °C
1st line
2nd line
1000
60
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS = 3 V
2nd line
ID - Drain Current (A)
100
80
60
40
100
TC = 125 °C
20
TC = -55 °C
0
0
10
0
0.5
1
1.5
10
2
0
1
2
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
15 000
10000
10000
1000
0.0006
100
VGS = 10 V
1000
9000
6000
Coss
100
3000
0.0002
10
0
20
40
60
80
100
Crss
0
120
10
0
5
10
15
20
25
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10
1000
6
4
1st line
2nd line
VDS = 7.5 V
VDS = 24 V
100
2
0
10
0
25
50
75
100
125
2nd line
RDS(on) - On-Resistance (Normalized)
VDS = 15 V
8
10000
1.6
10000
ID = 20 A
30
ID = 20 A
1.4
VGS = 10 V
1.2
VGS = 4.5 V
100
1.0
0.8
10
-50
-25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0243-Rev. A, 26-Feb-18
1000
1st line
2nd line
0.0004
Ciss
1st line
2nd line
VGS = 4.5 V
2nd line
C - Capacitance (pF)
12 000
0.0008
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
4
VDS - Drain-to-Source Voltage (V)
2nd line
0.0010
2nd line
VGS - Gate-to-Source Voltage (V)
3
Document Number: 76351
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR392DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10000
TJ = 150 °C
1.6
VGS(th) (V)
TJ = 25 °C
1
1000
1.4
1000
ID = 250μA
1st line
2nd line
10
1st line
2nd line
2nd line
IS - Source Current (A)
10000
1.8
1.2
1.0
100
100
0.8
0.1
0.6
10
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-50
-25
0
25
50
75
100 125 150
TJ - Temperature (°C)
2nd line
VSD - Source-to-Drain Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
200
10000
0.0030
10000
0.0025
150
1000
0.0015
0.0010
1st line
2nd line
1000
2nd line
Power (W)
0.0020
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 20 A
100
100
TJ = 125 °C
100
50
0.0005
TJ = 25 °C
0
10
0
2
4
6
8
0
0.001
10
0.01
VGS - Gate-to-Source Voltage (V)
2nd line
0.1
1
10
100
10
1000
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
Limited by RDS(on) (1)
1000
IDM Limited 10000
ID(ON) Limited
100 μs
1 ms
10
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
100
10 ms
100 ms
1
1s
10 s
0.1
TA = 25 °C
Single pulse
0.01
0.01
(1)
100
DC
BVdss Limited
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S18-0243-Rev. A, 26-Feb-18
Document Number: 76351
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR392DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
300
1000
1st line
2nd line
2nd line
ID - Drain Current (A)
400
200
Package limited
100
100
0
10
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
150
10000
120
1st line
2nd line
2nd line
Power (W)
1000
90
60
100
30
0
10
0
25
50
75
100
125
150
TC - Case (Drain) Temperature (°C)
2nd line
Power, Junction-to-Case
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-0243-Rev. A, 26-Feb-18
Document Number: 76351
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR392DP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
Notes:
0.2
0.1
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
PDM
0.1
t1
0.05
t2
t
1. Duty cycle, D = t1
2
2. Per unit base = RthJA = 54 °C/W
0.02
100
3. TJM - TA = PDMZthJA (t)
4. Surface mounted
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
10000
1
0.2
1000
0.1
0.1
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.05
0.02
100
Single pulse
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case (Drain)
Axis Title
Axis Title
10000
Duty cycle = 0.5
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
100
0.05
0.02
Single pulse
0.1
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd2nd
lineline
Normalized Thermal Transient Impedance, Junction-to-Case (Source)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76351.
S18-0243-Rev. A, 26-Feb-18
Document Number: 76351
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8 Double Cooling Case Outline
8
M1
7
M4
6
K1
5
D1
5
6
K1
7
8
K
T3
E2
E
T1
E1
T2
H
T5
D
M4
e
1
2
3
L
M3
4
4
3
2
1
b
Back side view
A1
c
A
T4
M2
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.51
0.56
0.61
0.020
0.022
0.024
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.36
0.41
0.46
0.014
0.016
0.018
c
0.15
0.20
0.25
0.006
0.008
0.010
D
4.90
5.00
5.10
0.193
0.197
0.201
D1
3.71
3.76
3.81
0.146
0.148
0.150
e
1.27 BSC
MAX.
0.050 BSC
E
5.90
6.00
6.10
0.232
0.236
0.240
E1
3.60
3.65
3.70
0.142
0.144
0.146
E2
0.46 typ.
0.018 typ.
H
0.49
0.54
0.59
0.019
0.021
0.023
K
1.22
1.27
1.32
0.048
0.050
0.052
K1
0.64 typ.
0.025 typ.
L
0.49
0.54
0.59
0.019
0.021
0.023
M1
3.85
3.90
3.95
0.152
0.154
0.156
M2
2.74
2.79
2.84
0.108
0.110
0.112
M3
1.06
1.11
1.16
0.042
0.044
0.046
M4
0.56 typ.
N
0.022 typ.
8
8
T1
4.51
4.56
4.61
0.178
0.180
0.182
T2
2.58
2.63
2.68
0.102
0.104
0.106
T3
1.88
1.93
1.98
0.074
0.076
0.078
T4
0.97 typ.
0.038 typ.
T5
0.48 typ.
0.019 typ.
ECN: T21-0014-Rev. B, 08-Feb-2021
DWG: 6048
Document Number: 75846
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 08-Feb-2021
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Revision: 09-Jul-2021
1
Document Number: 91000