SIDR402EP-T1-RE3

SiDR402EP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 S 6.1 5m m 1 5 5.1 mm Top View 4 G 1 2 3 S S S Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM Top side cooling feature provides additional venue for thermal transfer • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • • • • D 8 • • • • • • 40 0.00088 0.00116 53 291 Single D Synchronous rectification OR-ing High power density DC/DC Motor drive control Battery management Load switch G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR402EP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche Energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 40 +20, -16 291 244 65.2 b, c 54.6 b, c 400 136 6.8 b, c 50 125 150 105 7.5 b, c 5.25 b, c -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t ≤ 10 s RthJA 15 20 Maximum junction-to-ambient b, f Maximum junction-to-case (drain) Steady state RthJC °C/W 0.8 1 Maximum junction-to-case (source) Steady state RthJC 1.1 1.4 Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W S21-0839-Rev. A, 09-Aug-2021 Document Number: 63111 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR402EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 40 - - V - 24 - - -5.4 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 50 - - VGS = 10 V, ID = 20 A - 0.00073 0.00088 VGS = 4.5 V, ID = 15 A - 0.00096 0.00116 VDS = 10 V, ID = 20 A - 147 - μA A Ω S Dynamic b Input capacitance Ciss - 9100 - Output capacitance Coss - 1650 - Reverse transfer capacitance Crss - 210 - - 0.024 0.048 - 110 165 - 53 80 - 22.5 - - 9.5 - VDS = 20 V, VGS = 0 V, f = 1 MHz Crss/Ciss ratio VDS = 20 V, VGS = 10 V, ID = 20 A Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 75 - Gate resistance Rg f = 1 MHz 0.3 0.88 1.5 - 15 30 - 42 84 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω pF nC Ω - 42 84 tf - 10 20 td(on) - 45 90 - 100 200 - 56 112 - 40 80 - - 100 - - 400 - 0.73 1.1 V - 65 130 ns - 90 180 nC - 37 - - 30 - tr td(off) VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0839-Rev. A, 09-Aug-2021 Document Number: 63111 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 250 10000 250 VGS = 10 V thru 4 V VGS = 3 V 100 100 1000 150 1st line 2nd line 1000 150 2nd line ID - Drain Current (A) 200 1st line 2nd line 2nd line ID - Drain Current (A) 200 100 TC = 25 °C 50 50 0 0.5 1.0 1.5 2.0 10 0 10 0 TC = -55 °C TC = 125 °C VGS = 2 V 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 0.0011 10000 100 000 0.0008 100 0.0007 1000 Coss 100 1000 Crss VGS = 10 V 0 20 40 60 80 10 100 10 0.0006 0 100 8 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1000 VDS = 10 V, 20 V, 30 V 100 2 10 0 22 44 66 88 110 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 6 10000 2.0 8 4 40 Axis Title 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 32 ID - Drain Current (A) 10 0 24 1.7 VGS = 10 V, 20 A 1000 1.4 1.1 VGS = 4.5 V, 20 A 100 0.8 10 0.5 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0839-Rev. A, 09-Aug-2021 1st line 2nd line 0.0009 Ciss 10 000 1st line 2nd line 1000 VGS = 4.5 V 2nd line (pF) C - Capacitance 0.0010 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 100 Document Number: 63111 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.005 10000 100 ID = 20 A TJ = 150 °C TJ = 25 °C 0.1 100 0.01 0.004 1000 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 125 °C 0.002 100 0.001 TJ = 25 °C 0.001 10 0 0.2 0.4 0.6 0.8 10 0 1.0 0 2 4 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.4 10000 500 0.1 400 -0.5 100 300 1st line 2nd line ID = 5 mA 1000 2nd line P - Power (W) 1000 -0.2 1st line 2nd line 2nd line VGS(th) - Variance (V) 6 200 100 ID = 250 μA -0.8 100 10 -1.1 -50 -25 0 25 50 10 0 0.001 75 100 125 150 175 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 ID limited 100 μs 1000 1 ms 10 10 ms Limited by RDS(on) a 100 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 IDM limited 1s 100 10s 0.1 DC TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0839-Rev. A, 09-Aug-2021 Document Number: 63111 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 325 1000 195 1st line 2nd line 2nd line ID - Drain Current (A) 260 130 100 65 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 175 2.8 1st line 2nd line 70 100 35 1000 2.1 1st line 2nd line 1000 105 2nd line P - Power (W) 140 2nd line P - Power (W) 10000 3.5 1.4 100 0.7 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 175 Note b. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0839-Rev. A, 09-Aug-2021 Document Number: 63111 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR402EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63111. S21-0839-Rev. A, 09-Aug-2021 Document Number: 63111 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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