SIDR500EP-T1-RE3

SiDR500EP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8DC D D 6 5 D 7 • TrenchFET® Gen V power MOSFET D 8 • Very low RDS x Qg figure-of-merit (FOM) • Enables higher power density with very low RDS(on) and thermally enhanced compact package S 1 2 S 3 4 S S G 6.1 5m m m 1 5 m .15 Top View • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration APPLICATIONS 30 0.00047 0.00068 54.3 421 a Single D • DC/DC converter • POL • Synchronous rectification G • Power and load switch • Battery management N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR500EP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) LIMIT 30 +16 / -12 421 352 94 b, c 78 b, c 500 136 95 b, c 50 125 150 105 7.5 b, c 5.25 b, c -55 to +175 260 ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) Maximum junction-to-case (source) t ≤ 10 s Steady state Steady state SYMBOL RthJA RthJC RthJC TYPICAL 15 0.8 1.1 MAXIMUM 20 1 1.4 UNIT °C/W Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W S21-1177-Rev. A, 06-Dec-2021 Document Number: 63158 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR500EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 30 - - ΔVDS/TJ ID = 10 mA - 20 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -0.42 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1 - 2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = +16 V, -12 V - - ± 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 24 V, VGS = 0 V - - 1 VDS = 24 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 20 A - 0.00039 0.00047 VGS = 4.5 V, ID = 20 A - 0.00057 0.00068 VDS = 15 V, ID = 20 A - 8960 - VDS = 15 V, VGS = 0 V, f = 1 MHz - 2990 - - 168 - - 120 180 - 54.3 82 - 25.6 - - 8.7 - 210 - μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 15 V, VGS = 0 V - 105 - Gate resistance Rg f = 1 MHz 0.4 0.9 1.6 - 18 36 - 11 22 - 47 94 tf - 11 22 td(on) - 47 94 - 102 200 - 50 100 - 20 40 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tr td(off) VDD = 15 V, RL = 0.75 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 0.75 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C - - 136 - - 500 IS = 10 A - 0.69 1.1 - 65 130 ns IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C - 86 172 nC - 34 - - 31 - A V ns Notes g. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % h. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1177-Rev. A, 06-Dec-2021 Document Number: 63158 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR500EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 200 80 100 1000 150 TC = 25 °C 100 100 50 40 VGS = 2 V thru 0 V 0 0.5 1.0 1.5 2.0 TC = -55 °C TC = 125 °C 10 0 10 0 0 2.5 0.8 1.6 2.4 3.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 4.0 Axis Title 10000 0.0008 10000 100 000 1000 0.0006 0.0005 100 VGS = 10 V Ciss 1000 10 000 1st line 2nd line VGS = 4.5 V C - Capacitance (pF) 0.0007 1st line 2nd line RDS(on) - On-Resistance ( ) 2nd Line 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) VGS = 10 V thru 3 V 1st line 2nd line 2nd line ID - Drain Current (A) 160 10000 250 Coss 100 1000 0.0004 Crss 0 20 40 60 80 10 100 10 0.0003 0 100 6 12 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VDS = 10 V, 15 V, 20 V 100 2 10 0 0 25 50 75 100 125 1.7 VGS = 10 V, 20 A 1.1 VGS = 4.5 V, 20 A 100 0.8 10 0.5 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-1177-Rev. A, 06-Dec-2021 1000 1.4 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 6 10000 2.0 8 4 30 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 18 Document Number: 63158 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR500EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.4 10000 100 2nd line VGS(th) - Variance (V) TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0 -0.2 ID = 5 mA 100 -0.4 -0.6 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.2 10 ID = 250 µA 10 -0.8 1.2 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.005 10000 500 400 100 300 1st line 2nd line 0.002 1000 2nd line P - Power (W) 1000 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 20 A 0.004 200 100 TJ = 125 °C 0.001 100 TJ = 25 °C 10 0 0 2 4 6 8 10 0 0.001 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 2nd line ID - Drain Current (A) 100 10000 IDM limited ID limited 100 µs 1 ms 10 Limited by RDS(on) a 1000 10 ms 100 ms 1 1s 1st line 2nd line 1000 100 10s 0.1 DC TA = 25 °C, single pulse 0.01 0.01 BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S21-1177-Rev. A, 06-Dec-2021 Document Number: 63158 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR500EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 450 1000 270 1st line 2nd line 2nd line ID - Drain Current (A) 360 180 100 90 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating a Note a. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit Axis Title Axis Title 10000 175 140 70 100 35 1000 2.1 1st line 2nd line 1000 105 2nd line P - Power (W) 2.8 1st line 2nd line 2nd line P - Power (W) 10000 3.5 1.4 100 0.7 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient S21-1177-Rev. A, 06-Dec-2021 175 Document Number: 63158 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR500EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63158. S21-1177-Rev. A, 06-Dec-2021 Document Number: 63158 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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