SiDR510EP
www.vishay.com
Vishay Siliconix
N-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8DC
D
D
D 6 7
5
• TrenchFET® Gen V power MOSFET
D
8
• Very low RDS - Qg figure-of-merit (FOM)
• Tuned for the lowest RDS - Qoss FOM
S
• 100 % Rg and UIS tested
6.1
5m
m
1
5
5.1
2
3
4 S S
G
mm
Top View
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
S
APPLICATIONS
Bottom View
• Primary side switch
• DC/DC converters
PRODUCT SUMMARY
VDS (V)
0.0036
• Power supplies
RDS(on) max. (Ω) at VGS = 7.5 V
0.0042
• Motor drive control
Qg typ. (nC)
40
ID (A)
148
G
• OR-ing and hot swap switch
100
RDS(on) max. (Ω) at VGS = 10 V
Configuration
D
• Synchronous rectification
S
N-Channel MOSFET
• Battery management
Single
ORDERING INFORMATION
Package
PowerPAK SO-8DC
Lead (Pb)-free and halogen-free
SiDR510EP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
100
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 150 °C)
TA = 25 °C
ID
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
TC = 70 °C
TA = 25 °C
Operating junction and storage temperature range
A
136
6.8 b, c
IAS
45
101
mJ
150
PD
105
7.5 b, c
W
5.25 b, c
TA = 70 °C
Soldering recommendations (peak temperature) d, e
300
EAS
TC = 25 °C
Maximum power dissipation
124 a
33 b, c
27.7 b, c
TA = 70 °C
Pulsed drain current (t = 100 μs)
V
148 a
TC = 25 °C
TC = 70 °C
UNIT
TJ, Tstg
-55 to +175
260
°C
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S21-1181-Rev. A, 06-Dec-2021
Document Number: 63150
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR510EP
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, b
Maximum junction-to-case (drain)
Maximum junction-to-case (source)
t ≤ 10 s
Steady state
Steady state
SYMBOL
RthJA
RthJC
RthJC
TYPICAL
15
0.8
1.1
MAXIMUM
20
1
1.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 54 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
VDS temperature coefficient
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a
Dynamic b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
ID = 10 mA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 70 °C
VGS = 10 V, ID = 20 A
VGS = 7.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
100
2
-
58
-7.2
0.0030
0.0034
57
4
100
1
15
0.0036
0.0042
-
V
0.5
-
4980
1050
11
54
40
23.3
3
109
1.15
19
10
29
8
24
14
25
10
81
60
2
38
20
58
16
48
28
50
20
-
0.76
56
65
26
25
136
300
1.1
102
130
-
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 20 A
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 50 V, VGS = 7.5 V, ID = 20 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
VDS = 50 V, VGS = 0 V
f = 1 MHz
VDD = 50 V, RL = 2.5 Ω, ID ≅ 20 A,
VGEN = 10 V, Rg = 1 Ω
VDD = 50 V, RL = 2.5 Ω, ID ≅ 20 A,
VGEN = 7.5 V, Rg = 1 Ω
IS = 5 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs,
TJ = 25 °C
mV/°C
V
nA
μA
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S21-1181-Rev. A, 06-Dec-2021
Document Number: 63150
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR510EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
200
10000
250
VGS = 10 V thru 6 V
80
VGS = 5 V
100
1000
150
TC = 25 °C
100
100
50
40
1
2
3
4
10
0
10
0
0
TC = -55 °C
TC = 125 °C
VGS = 4 V thru 0 V
0
5
1.6
3.2
4.8
6.4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
Axis Title
8.0
Axis Title
10000
0.0040
10 000
10000
Ciss
1000
0.0034
VGS = 10 V
0.0031
100
1000
1000
1st line
2nd line
VGS = 7.5 V
2nd line
C - Capacitance (pF)
0.0037
1st line
2nd line
RDS(on) - On-Resistance ( )
1st line
2nd line
1000
120
2nd line
ID - Drain Current (A)
200
1st line
2nd line
2nd line
ID - Drain Current (A)
160
Coss
100
100
10
0.0028
Crss
20
40
60
80
0
100
20
40
80
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
1000
1st line
2nd line
VDS = 25 V, 50 V, 75 V
100
2
10
0
0
11
22
33
44
55
2nd line
RDS(on) - On-Resistance (Normalized)
ID = 20 A
6
10000
1.9
8
4
100
Axis Title
10000
10
2nd line
VGS - Gate-to-Source Voltage (V)
60
1.6
VGS = 10 V, 20 A
1000
1.3
VGS = 7.5 V, 20 A
1.0
100
0.7
10
0.4
-50 -25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S21-1181-Rev. A, 06-Dec-2021
1st line
2nd line
0
10
1
10
0.0025
Document Number: 63150
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR510EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
TJ = 150 °C
1
TJ = 25 °C
100
0.1
0.01
1000
ID = 5 mA
-0.5
100
0.2
0.4
0.6
0.8
1.0
ID = 250 µA
-1.0
10
0
1st line
2nd line
1000
10000
0
2nd line
VGS(th) - Variance (V)
10
1st line
2nd line
2nd line
IS - Source Current (A)
0.5
10000
100
10
-1.5
1.2
-50 -25
0
25
50
75 100 125 150 175
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
10000
0.020
10000
500
400
0.008
100
300
1st line
2nd line
TJ = 125 °C
1000
2nd line
P - Power (W)
1000
0.012
1st line
2nd line
2nd line
RDS(on) - On-Resistance ( )
ID = 20 A
0.016
200
100
0.004
100
TJ = 25 °C
10
0
0
2
4
6
8
10
0
0.001
10
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
t - Time (s)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
10000
1000
IDM limited
ID limited
1000
100
µs
10
1 ms
Limited by RDS(on)
a
10 ms
1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100ms
100
1s
0.1
10s
TA = 25 °C,
single pulse
0.01
0.01
BVDSS limited
DC
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Ambient
S21-1181-Rev. A, 06-Dec-2021
Document Number: 63150
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR510EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
175
1000
105
1st line
2nd line
2nd line
ID - Drain Current (A)
140
70
100
35
10
0
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Current Derating a
Axis Title
Axis Title
175
2.8
1st line
2nd line
70
100
35
1000
2.1
1st line
2nd line
1000
105
2nd line
P - Power (W)
140
2nd line
P - Power (W)
10000
3.5
10000
1.4
100
0.7
0
10
0
25
50
75
100
125
150
175
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
175
Note
a. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S21-1181-Rev. A, 06-Dec-2021
Document Number: 63150
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiDR510EP
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
10000
Duty cycle = 0.5
Notes
0.2
PDM
0.1
0.1
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 54 °C/W
0.02
3. TJM - TA = PDMZthJA
Single pulse
0.01
0.0001
0.001
1000
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
1
0.01
100
(t)
4. Surface mounted
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
0.2
1000
0.1
0.05
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.02
0.1
Single pulse
100
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63150.
S21-1181-Rev. A, 06-Dec-2021
Document Number: 63150
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8 Double Cooling Case Outline
8
M1
7
M4
6
K1
5
D1
5
6
K1
7
8
K
T3
E2
E
T1
E1
T2
H
T5
D
M4
e
1
2
3
L
M3
4
4
3
2
1
b
Back side view
A1
c
A
T4
M2
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.51
0.56
0.61
0.020
0.022
0.024
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.36
0.41
0.46
0.014
0.016
0.018
c
0.15
0.20
0.25
0.006
0.008
0.010
D
4.90
5.00
5.10
0.193
0.197
0.201
D1
3.71
3.76
3.81
0.146
0.148
0.150
e
1.27 BSC
MAX.
0.050 BSC
E
5.90
6.00
6.10
0.232
0.236
0.240
E1
3.60
3.65
3.70
0.142
0.144
0.146
E2
0.46 typ.
0.018 typ.
H
0.49
0.54
0.59
0.019
0.021
0.023
K
1.22
1.27
1.32
0.048
0.050
0.052
K1
0.64 typ.
0.025 typ.
L
0.49
0.54
0.59
0.019
0.021
0.023
M1
3.85
3.90
3.95
0.152
0.154
0.156
M2
2.74
2.79
2.84
0.108
0.110
0.112
M3
1.06
1.11
1.16
0.042
0.044
0.046
M4
0.56 typ.
N
0.022 typ.
8
8
T1
4.51
4.56
4.61
0.178
0.180
0.182
T2
2.58
2.63
2.68
0.102
0.104
0.106
T3
1.88
1.93
1.98
0.074
0.076
0.078
T4
0.97 typ.
0.038 typ.
T5
0.48 typ.
0.019 typ.
ECN: T21-0014-Rev. B, 08-Feb-2021
DWG: 6048
Document Number: 75846
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 08-Feb-2021
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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Revision: 01-Jan-2023
1
Document Number: 91000
