SIDR578EP-T1-RE3

SiDR578EP www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 • TrenchFET® Gen V power MOSFET D 8 • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM S • 100 % Rg and UIS tested 6.1 5m m 1 5 5.1 2 3 4 S S G mm Top View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS Bottom View • Primary side switch • DC/DC converters PRODUCT SUMMARY VDS (V) D • Synchronous rectification G • OR-ing and hot swap switch 150 RDS(on) max. (Ω) at VGS = 10 V 0.0088 • Power supplies RDS(on) max. (Ω) at VGS = 7.5 V 0.010 • Motor drive control Qg typ. (nC) 24.5 • Battery management ID (A) Configuration S N-Channel MOSFET 78 Single ORDERING INFORMATION Package PowerPAK SO-8DC Lead (Pb)-free and halogen-free SiDR578EP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 150 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 °C) TA = 25 °C ID Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C Operating junction and storage temperature range 200 A 136 6.8 b, c 30 45 mJ 150 PD 105 7.5 b, c W 5.25 b, c TA = 70 °C Soldering recommendations (peak temperature) d, e 65 a 17.4 b, c 14.5 b, c TA = 70 °C Pulsed drain current (t = 100 μs) V 78 a TC = 25 °C TC = 70 °C UNIT TJ, Tstg -55 to +175 260 °C Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-1188-Rev. A, 13-Dec-2021 Document Number: 63159 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR578EP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, b Maximum junction-to-case (drain) Maximum junction-to-case (source) t ≤ 10 s Steady state Steady state SYMBOL RthJA RthJC RthJC TYPICAL 15 0.8 1.1 MAXIMUM 20 1 1.4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 54 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 1 mA ID = 10 mA ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V 150 2 - 108 -7.0 - 4 100 V Zero gate voltage drain current Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance IDSS RDS(on) gfs Ciss Coss Crss VDS = 120 V, VGS = 0 V - - 1 VDS = 120 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 20 A VGS = 7.5 V, ID = 20 A VDS = 15 V, ID = 20 A - 0.0073 0.00825 62 0.0088 0.010 - - 2540 325 6.6 32.5 24.5 15.3 3.1 49 37 - VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 20 A Total gate charge Qg Gate-source charge Gate-drain charge Qgs Qgd VDS = 75 V, VGS = 7.5 V, ID = 20 A Output charge Qoss VDS = 75 V, VGS = 0 V - 105 - Rg f = 1 MHz 0.5 - 1.35 16 22 23 23 18 68 21 24 2.3 32 44 46 46 36 136 42 48 - 0.75 85 200 65 20 94 200 1.1 170 400 - Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb VDD = 75 V, RL = 3.75 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω VDD = 75 V, RL = 3.75 Ω, ID ≅ 20 A, VGEN = 7.5 V, Rg = 1 Ω TC = 25 °C IS = 5 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA Ω S pF nC Ω ns A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1188-Rev. A, 13-Dec-2021 Document Number: 63159 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR578EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 150 120 60 100 VGS = 5 V 1000 120 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 160 VGS = 10 V thru 6 V 1st line 2nd line 2nd line ID - Drain Current (A) 10000 200 80 TC = 25 °C 100 40 30 TC = 125 °C VGS = 4 V thru 0 V 10 0 0 1 2 3 4 TC = -55 °C 10 0 0 5 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 10000 0.010 10 000 10000 1000 0.008 0.007 100 VGS = 10 V 1000 Coss 100 100 10 Crss 0.006 0 20 40 60 80 10 1 10 0.005 0 100 30 60 120 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VDS = 50 V, 75 V, 100 V 4 100 2 10 0 14 21 28 35 2.4 VGS = 10 V, 20 A 1.4 VGS = 7.5 V, 20 A 100 0.9 10 0.4 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-1188-Rev. A, 13-Dec-2021 1000 1.9 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 6 10000 2.9 8 7 150 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 90 ID - Drain Current (A) 0 1000 1st line 2nd line VGS = 7.5 V 2nd line C - Capacitance (pF) 0.009 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) Ciss Document Number: 63159 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR578EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.5 10000 100 2nd line VGS(th) - Variance (V) TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 -0.3 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.1 10 ID = 5 mA -0.7 100 ID = 250 µA -1.1 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 -1.5 1.2 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.05 10000 500 400 0.02 100 300 1st line 2nd line TJ = 125 °C 1000 2nd line P - Power (W) 1000 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 20 A 0.04 200 100 0.01 100 TJ = 25 °C 10 0 0 2 4 6 8 10 0 0.001 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited ID limited 100 µs 1000 10 1 ms 1 Limited by RDS(on) 10 ms a 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 100 1s 0.1 10 s TA = 25 °C, single pulse 0.01 0.01 0.1 BVDSS limited 1 10 100 DC 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient S21-1188-Rev. A, 13-Dec-2021 Document Number: 63159 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR578EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 85 1000 51 1st line 2nd line 2nd line ID - Drain Current (A) 68 34 100 17 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 10000 175 140 70 100 35 1000 2.1 1st line 2nd line 1000 105 2nd line P - Power (W) 2.8 1st line 2nd line 2nd line P - Power (W) 10000 3.5 1.4 100 0.7 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 175 Note a. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-1188-Rev. A, 13-Dec-2021 Document Number: 63159 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR578EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63159. S21-1188-Rev. A, 13-Dec-2021 Document Number: 63159 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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