SIDR608EP-T1-RE3

SiDR608EP www.vishay.com Vishay Siliconix N-Channel 45 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 • TrenchFET® Gen IV power MOSFET D 8 • 45 V Drain-source break-down voltage • Tuned for low Qg and Qoss S • 100 % Rg and UIS tested 6.1 5m m 1 3 4 S G m 5m 5.1 Top View 1 2 S S APPLICATIONS Bottom View • High power density DC/DC • Motor drive control 0.00120 RDS(on) max. (Ω) at VGS = 4.5 V 0.00180 ID (A) a Configuration G 45 RDS(on) max. (Ω) at VGS = 10 V Qg typ. (nC) D • Synchronous rectification PRODUCT SUMMARY VDS (V) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S N-Channel MOSFET 50.5 228 Single ORDERING INFORMATION Package PowerPAK SO-8DC Lead (Pb)-free and halogen-free SiDR608EP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 45 Gate-source voltage VGS +20, -16 Continuous drain current (TJ = 175 °C) TC = 25 °C 228 TC = 70 °C 190 TA = 25 °C ID Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS Maximum power dissipation TC = 70 °C TA = 25 °C Soldering recommendations (peak temperature) d, e A 113 6.8 b, c IAS 50 125 mJ 125 PD 87.5 7.5 b, c W 5.25 b, c TA = 70 °C Operating junction and storage temperature range 400 EAS TC = 25 °C V 56 b, c 47 b, c TA = 70 °C UNIT TJ, Tstg -55 to +175 260 °C Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-0879-Rev. A, 23-Aug-2021 Document Number: 63123 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608EP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, b Maximum junction-to-case (drain) Maximum junction-to-case (source) Notes a. Surface mounted on 1" x 1" FR4 board b. Maximum under steady state conditions is 54 °C/W t ≤ 10 s Steady state Steady state SYMBOL TYPICAL MAXIMUM UNIT RthJA RthJC RthJC 15 0.9 1.1 20 1.2 1.4 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA ID = 10 mA ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = +20, -16 V VDS = 45 V, VGS = 0 V VDS = 45 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 10 V, ID = 20 A 45 1.1 50 - 29 -5.8 0.00100 0.00136 120 2.3 ± 100 1 10 0.00120 0.00180 - V 0.3 - 8900 1244 120 0.0135 111 50.5 26 7.8 59 0.88 19 10 50 8 52 86 50 25 0.0270 167 76 1.5 38 20 100 16 104 172 100 50 - 0.7 52 71 32 20 113 400 1.1 104 142 - Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Crss/Ciss ratio Total gate charge Gate-source charge Gate-drain charge Output charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (tp = 100 μs) Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 20 V, VGS = 4.5 V, ID = 20 A IS ISM VSD trr Qrr ta tb TC = 25 °C VDS = 20 V, VGS = 0 V f = 1 MHz VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω VDD = 20 V, RL = 1 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω IS = 10 A IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A Ω S pF - nC Ω ns A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0879-Rev. A, 23-Aug-2021 Document Number: 63123 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200 10000 350 VGS = 10 V thru 4 V 80 100 VGS = 3 V 1000 210 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 280 1st line 2nd line 2nd line ID - Drain Current (A) 160 140 TC = 25 °C 100 70 40 TC = 125 °C VGS = 2 V 10 0 0 1 2 3 4 TC = -55 °C 10 0 0 5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 0.0018 10000 10 000 0.0012 100 VGS = 10 V 1000 1000 Coss 100 100 Crss 0.0010 20 40 60 80 0 100 9 18 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1000 1st line 2nd line 4 VDS = 10 V, 20 V, 30 V 100 2 10 0 44 66 88 110 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 8 6 10000 2.0 10000 22 45 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 36 ID - Drain Current (A) 10 0 27 1.7 VGS = 10 V, 20 A 1000 1.4 1.1 VGS = 4.5 V, 20 A 100 0.8 10 0.5 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S21-0879-Rev. A, 23-Aug-2021 1st line 2nd line 0 10 10 10 0.0008 1st line 2nd line 1000 VGS = 4.5 V 0.0014 2nd line C - Capacitance (pF) 0.0016 1st line 2nd line RDS(on) - On-Resistance ( ) Ciss Document Number: 63123 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.005 10000 100 TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0.003 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance ( ) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 20 A 0.004 TJ = 125 °C 0.002 100 0.001 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 0.4 10000 500 0.1 ID = 5 mA -0.5 100 1000 300 1st line 2nd line 1000 -0.2 2nd line P - Power (W) 400 1st line 2nd line 2nd line VGS(th) - Variance (V) 4 200 100 ID = 250 µA -0.8 100 10 -1.1 -50 -25 0 25 50 75 100 125 150 175 0 0.001 10 0.01 0.1 1 10 TJ - Junction Temperature (°C) t - Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient S21-0879-Rev. A, 23-Aug-2021 Document Number: 63123 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 250 10000 1000 IDM limited 150 100 100 50 ID limited 100 µs 1 ms1000 10 Limited by RDS(on) 10 ms a 100 ms 1 1s DC TA = 25 °C, single pulse 10 0 25 50 75 100 125 150 0.1 1 10 100 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V) Current Derating a Safe Operating Area b Axis Title Axis Title 10000 150 10000 3.5 120 60 100 30 1000 2.1 1st line 2nd line 1000 90 2nd line P - Power (W) 2.8 1st line 2nd line 2nd line P - Power (W) BVDSS limited 10 0.01 0.01 175 100 10s 0.1 0 1st line 2nd line 1000 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) 200 1.4 100 0.7 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 175 Notes a. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit b. VGS > minimum VGS at which RDS(on) is specified S21-0879-Rev. A, 23-Aug-2021 Document Number: 63123 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR608EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 (t) 4. Surface mounted Single pulse 0.01 0.0001 100 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.1 0.05 0.02 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63123. S21-0879-Rev. A, 23-Aug-2021 Document Number: 63123 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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