SIDR626LDP-T1-RE3

SiDR626LDP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D 6 5 D 7 TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Top side cooling feature provides additional venue for thermal transfer • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • • • • • D 8 S 6.1 5m m 1 m 5m 4 G 5.1 Top View 1 2 3 S S S Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) 0.0015 RDS(on) max. (Ω) at VGS = 4.5 V 0.0021 Qg typ. (nC) ID (A) Configuration • • • • • • • 60 RDS(on) max. (Ω) at VGS = 10 V 41 186 Single D Synchronous rectification Primary side switch DC/DC converter Solar micro inverter Motor drive switch Battery and load switch Industrial G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SIDR626LDP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 60 ± 20 204 163 45.6 b, c 36.5 b, c 300 113 5.6 b, c 50 125 125 80 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 15 20 0.8 1 Maximum junction-to-case (drain) Steady state RthJC °C/W 1.1 1.4 Maximum junction-to-case (source) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S20-0438-Rev. A, 08-Jun-2020 Document Number: 77277 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR626LDP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 60 - - ΔVDS/TJ ID = 1 mA - 37 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -4.9 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 60 V, VGS = 0 V - - 1 VDS = 60 V, VGS = 0 V, TJ = 70 °C - - 15 VDS ≥ 10 V, VGS = 10 V 40 - - VGS = 10 V, ID = 20 A - 0.0012 0.0015 VGS = 4.5 V, ID = 20 A - 0.0017 0.0021 VDS = 15 V, ID = 20 A - 140 - - 5900 - - 1340 - - 60 - - 89 135 - 41 62 - 17.4 - - 10.8 - μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 30 V, VGS = 0 V - 80 - Gate resistance Rg f = 1 MHz 0.3 0.88 1.5 - 17 34 - 64 128 - 45 90 tf - 10 20 td(on) - 40 80 - 235 470 - 47 94 - 20 40 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 20 A VDS = 30 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) tr td(off) VDD = 30 V, RL = 3 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω VDD = 30 V, RL = 1.5 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C - - 113 - - 400 - 0.71 1.1 V - 54 108 ns - 70 140 nC - 27 - - 27 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0438-Rev. A, 08-Jun-2020 Document Number: 77277 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR626LDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 200.0 10000 270 VGS = 10 V thru 4 V VGS = 3 V 80.0 100 40.0 1000 162 1st line 2nd line 1000 120.0 2nd line ID - Drain Current (A) 216 1st line 2nd line 2nd line ID - Drain Current (A) 160.0 108 TC = 25 °C 100 54 10 0 1.0 2.0 3.0 4.0 TC = -55 °C TC = 125 °C VGS = 2 V thru 0 V 0 10 0 5.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 10000 0.0030 10000 10 000 Ciss 1000 1st line 2nd line 0.0012 100 VGS = 10 V 1000 1000 1st line 2nd line VGS = 4.5 V 0.0018 2nd line C - Capacitance (pF) 2nd line RDS(on) - On-Resistance (Ω) 0.0024 Coss 100 100 0.0006 Crss 10 0.0000 0 40 80 120 160 10 10 0 200 12 24 48 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 1st line 2nd line VDS = 15 V, 30 V, 45 V 100 2 10 0 0 18 36 54 72 90 1.6 VGS = 10 V, 20 A 1000 1.4 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) ID = 20 A 6 10000 1.8 8 4 60 Axis Title 10000 10 2nd line VGS - Gate-to-Source Voltage (V) 36 1.2 1.0 VGS = 4.5 V, 20 A 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S20-0438-Rev. A, 08-Jun-2020 100 Document Number: 77277 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR626LDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.4 10000 100 2nd line VGS(th) - Variance (V) TJ = 150 °C 1 TJ = 25 °C 100 0.1 1000 0 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) 0.2 10 ID = 5 mA -0.2 100 -0.4 ID = 250 μA -0.6 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 -0.8 1.2 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.010 10000 1000 0.008 800 100 TJ = 125 °C 600 1st line 2nd line 0.004 1000 2nd line P - Power (W) 1000 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 400 100 0.002 200 TJ = 25 °C 10 0 0 2 4 6 8 10 0 0.001 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 100 μs ID limited 1000 1 ms 10 Limited by RDS(on) 10 ms a 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 100 1s 0.1 10 s TA = 25 °C, single pulse 0.01 0.01 BVDSS limited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0438-Rev. A, 08-Jun-2020 Document Number: 77277 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR626LDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 250 1000 150 1st line 2nd line 2nd line ID - Drain Current (A) 200 100 100 50 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 2.4 1st line 2nd line 60 100 1000 1.8 1st line 2nd line 1000 90 2nd line P - Power (W) 120 2nd line P - Power (W) 10000 3.0 10000 150 1.2 100 0.6 30 10 0 0 25 50 75 100 125 150 10 0 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0438-Rev. A, 08-Jun-2020 Document Number: 77277 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR626LDP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty cycle = 0.5 Notes 0.2 PDM 0.1 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77277. S20-0438-Rev. A, 08-Jun-2020 Document Number: 77277 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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