SIDR638DP-T1-GE3

SiDR638DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM Top side cooling feature provides additional venue for thermal transfer • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • • • • D 8 S 6.1 5m m 1 m 5m 5.1 Top View 4 G 1 2 3 S S S Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) Configuration • • • • • 40 0.00088 0.00116 63 100 a, g Single D Synchronous rectification DC/DC converters OR-ing Motor drive control Battery and load switch G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR638DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 40 +20, -16 100 a 100 a 64.6 b, c 51.7 b, c 400 100 a 5.6 b, c 50 125 125 80 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 15 20 0.8 1.0 Maximum junction-to-case (drain) Steady state RthJC °C/W Maximum junction-to-case (source) Steady state RthJC 1.1 1.4 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. TC = 25 °C S17-1001-Rev. A, 03-Jul-17 Document Number: 75312 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR638DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 40 - - ΔVDS/TJ ID = 250 μA - 24 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -5.4 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20 V, -16 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 70 °C - - 10 VDS ≥ 5 V, VGS =10 V 50 - - VGS =10 V, ID = 20 A - 0.00073 0.00088 VGS = 4.5 V, ID = 15 A - 0.00096 0.00116 VDS = 10 V, ID = 20 A - 147 - - 10 500 - - 1530 - μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 250 - Crss/Ciss - 0.024 0.048 - 136 204 - 63 95 - 30.5 - - 10.6 - Crss/Ciss ratio VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 20 V, VGS = 0 V - 75 104 Gate resistance Rg f = 1 MHz 0.3 0.88 1.5 - 20 40 - 21 42 100 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 4.5 V, ID = 20 A td(on) tr td(off) VDD = 20 V, RL = 1 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω pF nC Ω - 52 tf - 10 20 td(on) - 70 140 - 16 32 - 43 86 - 19 38 - - 100 - - 400 - 0.74 1.1 V - 59 118 ns - 85 1700 nC - 34 - - 25 - tr td(off) VDD = 20 V, RL = 1 Ω, ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1001-Rev. A, 03-Jul-17 Document Number: 75312 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR638DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 150 10000 10000 VGS = 10 V thru 4 V 60 100 30 1000 90 1st line 2nd line 1000 VGS = 3 V TC = 25 °C 60 100 TC = 125 °C 30 TC = -55 °C VGS = 2 V 0 0 10 0 0.5 1 1.5 2 2.5 10 0 1 2 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10000 Ciss 12000 0.0008 100 0.0007 1000 9000 1st line 2nd line 1000 VGS = 4.5 V 2nd line C - Capacitance (pF) 0.001 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 15000 10000 0.0009 6000 Coss 3000 0.0006 0 10 40 60 80 100 Crss VGS = 10 V 20 10 0 100 8 16 24 32 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.0 ID = 20 A 8 VDS = 20 V 1000 1st line 2nd line 6 VDS = 10 V 4 100 VDS = 30 V 2 0 10 60 90 120 150 2nd line RDS(on) - On-Resistance (Normalized) 10000 30 40 Axis Title Axis Title 10 0 5 Axis Title Axis Title 2nd line VGS - Gate-to-Source Voltage (V) 4 VDS - Drain-to-Source Voltage (V) 2nd line 0.0011 0 3 10000 ID = 20 A 1.7 VGS = 10 V VGS = 4.5 V 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1001-Rev. A, 03-Jul-17 1000 1.4 1st line 2nd line 90 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 120 Document Number: 75312 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR638DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.005 2nd line RDS(on) - On-Resistance (Ω) 10000 TJ = 150 °C 1000 1 TJ = 25 °C 1st line 2nd line 2nd line IS - Source Current (A) 10 0.1 100 0.01 10000 0.004 1000 0.003 1st line 2nd line 100 0.002 TJ = 125 °C 100 0.001 TJ = 25 °C 0.001 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 2 4 8 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title 10 Axis Title 0.5 10000 10000 200 0.2 150 1000 ID = 5 mA -0.4 100 100 ID = 250 μA 100 50 -0.7 -1.0 0 0.001 10 -50 -25 0 25 50 75 1st line 2nd line -0.1 2nd line Power (W) 1000 1st line 2nd line 100 125 150 0.01 0.1 1 10 100 10 1000 TJ - Temperature (°C) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title RDS(on) limited 1000 2nd line ID - Drain Current (A) 100 (1) IDM limited 10000 ID(on) limited 100 μs 1000 1 ms 10 10 ms 100 ms 1 1s 1st line 2nd line 2nd line VGS(th) - Variance (V) 6 100 10 s 0.1 TA = 25 °C single pulse 0.01 0.01 (1) DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1001-Rev. A, 03-Jul-17 Document Number: 75312 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR638DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 350 10000 1000 210 1st line 2nd line 2nd line ID - Drain Current (A) 280 140 Package limited 100 70 0 10 0 25 50 75 100 125 150 TC - Case (Drain) Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 150 10000 3.0 120 10000 2.4 1.8 1st line 2nd line 60 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 90 1.2 100 30 100 0.6 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case (Drain) Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1001-Rev. A, 03-Jul-17 Document Number: 75312 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR638DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 1 0.1 1000 PDM 0.1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 54 °C/W 0.02 3. TJM - TA = PDMZthJA 0.001 0.01 100 (t) 4. Surface mounted Single pulse 0.01 0.0001 2nd line Notes: 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case (Drain) Axis Title Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd2nd lineline Normalized Thermal Transient Impedance, Junction-to-Case (Source) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75312. S17-1001-Rev. A, 03-Jul-17 Document Number: 75312 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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