SIDR668ADP-T1-RE3

SiDR668ADP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 • TrenchFET® Gen IV power MOSFET D 8 • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM S • 100 % Rg and UIS tested 6.1 5m m 1 5 5.1 2 3 4 S S G mm Top View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS Bottom View • Primary side switch • DC/DC converters PRODUCT SUMMARY VDS (V) 0.0048 • Power supplies RDS(on) max. () at VGS = 7.5 V 0.0070 • Motor drive control Qg typ. (nC) 42 ID (A) 104 G • OR-ing 100 RDS(on) max. () at VGS = 10 V Configuration D • Synchronous rectification S • Battery and load switch N-Channel MOSFET Single ORDERING INFORMATION Package PowerPAK SO-8DC Lead (Pb)-free and halogen-free SiDR668ADP-T1-RE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 100 Gate-source voltage VGS ± 20 TC = 70 °C TA = 25 °C ID Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS TC = 70 °C TA = 25 °C Soldering recommendations (peak temperature) d, e 200 A 104 5.6 b, c IAS 35 61.2 mJ 125 PD 80 6.25 b, c W 4 b, c TA = 70 °C Operating junction and storage temperature range 23.3 b, c EAS TC = 25 °C Maximum power dissipation 83 a 18.3 b, c TA = 70 °C Pulsed drain current (t = 100 μs) V 104 a TC = 25 °C Continuous drain current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 260 °C Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-0946-Rev. B, 27-Sep-2021 Document Number: 77245 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR668ADP www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a Maximum junction-to-case (drain) Maximum junction-to-case (source) t  10 s Steady state Steady state SYMBOL RthJA RthJC RthJC TYPICAL 15 0.8 1.1 MAXIMUM 20 1 1.4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-source breakdown voltage VDS temperature coefficient VGS(th) temperature coefficient Gate-source threshold voltage Gate-source leakage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA ID = 10 mA ID = 250 μA VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 70 °C VDS  10 V, VGS =10 V VGS = 10 V, ID = 20 A VGS = 7.5 V, ID = 15 A VDS = 15 V, ID = 20 A 100 2 40 - 58 -9 0.0040 0.0054 85 4 100 1 15 0.0048 0.0070 - V 0.3 - 3750 395 18 54 42 17.5 11.4 73 0.9 21 18 36 10 25 61 34 11 81 63 1.6 42 36 72 20 50 122 68 22 - 0.73 59 115 41 18 104 200 1.1 118 230 - Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a a Forward transconductance Dynamic b Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Output charge Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Reverse recovery fall time Reverse recovery rise time RDS(on) gfs Ciss Coss Crss Qg VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 10 A Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 50 V, VGS = 7.5 V, ID = 10 A IS ISM VSD trr Qrr ta tb TC = 25 °C VDS = 50 V, VGS = 0 V f = 1 MHz VDD = 50 V, RL = 5 , ID  10 A, VGEN = 10 V, Rg = 1  VDD = 50 V, RL = 5 , ID  10 A, VGEN = 7.5 V, Rg = 1  IS = 5 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C mV/°C V nA μA A  S pF nC  ns A V ns nC ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0946-Rev. B, 27-Sep-2021 Document Number: 77245 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR668ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 200 160 VGS = 10 V thru 7 V 2nd line ID - Drain Current (A) 120 VGS = 6 V 80 40 120 80 TC = 25 °C TC = 125 °C 40 VGS = 5 V TC = -55 °C 0 0 0 1 2 3 4 0 5 2 4 Output Characteristics Transfer Characteristics 6000 10000 10000 4800 1000 1st line 2nd line 0.0053 0.0047 100 VGS = 10 V Ciss 1000 3600 1st line 2nd line VGS = 7.5 V 2nd line C - Capacitance (pF) 0.0059 10 Axis Title Axis Title 2nd line RDS(on) - On-Resistance (Ω) 8 VGS - Gate-to-Source Voltage (V) 2nd line 0.0065 Coss 2400 100 Crss 1200 0.0041 0.0035 0 10 0 16 32 48 64 10 0 80 20 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 2.5 ID = 10 A 8 1000 1st line 2nd line 6 VDS = 25 V, 50 V, 75 V 4 100 2 0 10 12 24 36 48 60 2nd line RDS(on) - On-Resistance (Normalized) 10000 0 100 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 2nd line 10000 ID = 20 A 2.1 VGS = 10 V 1000 1.7 VGS = 7.5 V 1.3 100 0.9 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S21-0946-Rev. B, 27-Sep-2021 1st line 2nd line 2nd line ID - Drain Current (A) 160 Document Number: 77245 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR668ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.6 10000 0.2 2nd line VGS(th) - Variance (V) 10 TJ = 25 °C TJ = 150 °C 1 100 0.1 1000 -0.2 1st line 2nd line 1000 1st line 2nd line 2nd line IS - Source Current (A) 100 ID = 5 mA -0.6 100 ID = 250 μA -1.0 0.01 10 0 0.2 0.4 0.6 0.8 10 -1.4 1.0 -50 VSD - Source-to-Drain Voltage (V) 2nd line -25 0 25 75 100 125 150 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.05 ID = 20 A 0.04 10000 500 10000 400 1000 2nd line Power (W) 1000 0.02 300 1st line 2nd line 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 50 200 100 100 TJ = 125 °C 0.01 100 TJ = 25 °C 0 10 5 6 7 8 9 10 0 0.001 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited 100 μs ID limited 1000 10 1 ms 10 ms Limited by RDS(on) (1) 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 100 1s 0.1 10 s TA = 25 °C Single pulse 0.01 0.01 (1) DC BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S21-0946-Rev. B, 27-Sep-2021 Document Number: 77245 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR668ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 120 1000 72 1st line 2nd line 2nd line ID - Drain Current (A) 96 48 100 24 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a Axis Title Axis Title 3 10000 150 2.4 1.8 1st line 2nd line 75 2nd line Power (W) 1000 1000 100 1st line 2nd line 2nd line P - Power (W) 125 10000 1.2 100 100 50 0.6 25 0 10 0 0 25 50 75 100 125 150 10 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S21-0946-Rev. B, 27-Sep-2021 Document Number: 77245 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR668ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM 0.1 0.1 t1 t2 t 1. Duty cycle, D = 1 t2 2. Per unit base = RthJA = 54 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77245. S21-0946-Rev. B, 27-Sep-2021 Document Number: 77245 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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