SIDR870ADP-T1-RE3

SiDR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D D 6 7 5 • TrenchFET® power MOSFET D 8 • Top side cooling feature provides additional venue for thermal transfer S • 100 % Rg and UIS tested 6.1 5m m 1 3 4 S G m 5m 5.1 Top View • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 2 S S APPLICATIONS • Primary side switch PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration D • Synchronous rectification Bottom View • DC/DC converters 100 0.0066 0.0070 0.0105 25.5 95 a Single G • OR-ing • Power supplies S • Motor drive control • Battery and load switch N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR870ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 100 ± 20 95 a 77.8 21.8 b, c 17.4 b, c 300 95 a 5.6 b, c 40 80 125 80 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t ≤ 10 s RthJA 15 20 0.8 1 Maximum junction-to-case (drain) Steady state RthJC °C/W 1.1 1.4 Maximum junction-to-case (source) Steady state RthJC Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W S17-1000-Rev. A, 03-Jul-17 Document Number: 77698 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR870ADP www.vishay.com Vishay Siliconix g. TC = 25 °C SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - ΔVDS/TJ ID = 250 μA - 56 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -6 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID = 250 μA 1.5 - 3 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 70 °C - - 10 VDS ≥ 5 V, VGS =10 V 30 - - VGS =10 V, ID = 20 A - 0.0055 0.0066 VGS = 7.5 V, ID = 20 A - 0.0058 0.0070 VGS = 4.5 V, ID = 15 A - 0.0075 0.0105 VDS = 10 V, ID = 20 A - 68 - - 2866 - - 719 - - 66 - μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS = 50 V, VGS = 10 V, ID = 20 A - 53.5 80 Total gate charge Qg VDS = 50 V, VGS = 7.5 V, ID = 20 A - 41 62 - 25.2 38 Gate-source charge Qgs VDS = 50 V, VGS = 4.5 V, ID = 20 A - 10 - VDS = 50 V, VGS = 0 V, f = 1 MHz Gate-drain charge Qgd - 10.6 - Output charge Qoss VDS = 50 V, VGS = 0 V - 69 104 Rg f = 1 MHz 0.3 1 2 - 13 26 - 14 28 - 35 70 Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 50 V, RL = 2.5 Ω, ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω tf - 9 18 td(on) - 17 34 - 15 30 - 33 65 - 9 18 tr td(off) VDD = 50 V, RL = 2.5 Ω, ID ≅ 20 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (tp = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A, VGS = 0 V IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C - - 95 - - 300 - 0.74 1.1 V - 54 100 ns - 76 140 nC - 27 - - 27 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1000-Rev. A, 03-Jul-17 Document Number: 77698 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR870ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 80 8 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 V thru 5 V 64 VGS = 4 V 48 32 TC = 25 °C 4 2 16 VGS = 3 V 0 0.0 6 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) TC = 125 °C TC = -55 °C 0 2.5 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 0.010 4600 0.009 3680 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics VGS = 4.5 V 0.008 0.007 VGS = 7.5 V 0.006 0.005 0 40 60 ID - Drain Current (A) Ciss 2760 1840 920 80 Coss Crss VGS = 10 V 20 0 0 100 20 40 60 80 VDS - Drain-to-Source Voltage (V) 100 Capacitance On-Resistance vs. Drain Current and Gate Voltage 2.1 RDS(on) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) 5 ID = 20 A 8 VDS = 50 V 6 VDS = 25 V VDS = 75 V 4 2 0 0 12 24 36 48 Qg - Total Gate Charge (nC) Gate Charge S17-1000-Rev. A, 03-Jul-17 60 ID = 20 A VGS = 10 V 1.8 1.5 VGS = 4.5 V 1.2 0.9 0.6 - 50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 77698 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR870ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.04 0.03 0.02 TJ = 125 °C 0.01 0.00 1.2 ID = 20 A TJ = 25 °C 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 10 Threshold Voltage Axis Title 0.5 0.2 150 - 0.1 ID = 5 mA -0.4 1st line 2nd line 1000 2nd line Power (W) VGS(th) Variance (V) 10000 200 100 100 ID = 250 μA 50 -0.7 -1.0 -50 -25 0 25 50 75 0 0.001 100 125 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 10 1000 Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 RDS(on) limited ID(on) limited 1000 100 µs 10 1 ms 10 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 IDM limited (1) 100ms 100 1s 10 s 0.1 TA = 25 °C Single pulse 0.01 0.01 (1) BVDSSlimited DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1000-Rev. A, 03-Jul-17 Document Number: 77698 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR870ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 120 120 1000 1000 60 40 90 1st line 2nd line Package limited 2nd line Power (W) 80 1st line 2nd line 2nd line ID - Drain Current (A) 100 10000 60 100 100 30 20 0 10 0 25 50 75 100 125 0 10 0 150 25 50 75 100 125 TC - Case (Drain) Temperature (°C) 2nd line TC - Case (Drain) Temperature (°C) 2nd line Current Derating a Power, Junction-to-Case 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit Axis Title 10000 1 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient S17-1000-Rev. A, 03-Jul-17 Document Number: 77698 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR870ADP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 0.02 100 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case (Drain) Axis Title 10000 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.2 0.1 100 0.05 0.02 Single pulse 0.1 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case (Source) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77698. S17-1000-Rev. A, 03-Jul-17 Document Number: 77698 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E2 E T1 E1 T2 H T5 D M4 e 1 2 3 L M3 4 4 3 2 1 b Back side view A1 c A T4 M2 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.020 0.022 0.024 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 3.60 3.65 3.70 0.142 0.144 0.146 E2 0.46 typ. 0.018 typ. H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T21-0014-Rev. B, 08-Feb-2021 DWG: 6048 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 08-Feb-2021 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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