SIE726DF-T1-E3

New Product SiE726DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • SkyFET™ Monolithic TrenchFET® Power MOSFET and Schottky Diode • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A)a RDS(on) (Ω)e Silicon Limit 0.0024 at VGS = 10 V 175 60 0.0033 at VGS = 4.5 V 149 60 VDS (V) 30 Package Qg (Typ.) Limit 50 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D 1 G 2 S S 3 4 Top View D D 5 5 S 4 3 G D 2 1 D • Synchronous Rectification • DC/DC • Low-Side Switch Schottky Diode G N-Channel MOSFET Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free) SiE726DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S For Related Documents www.vishay.com/ppg?68626 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD Limit 30 ± 20 175 (Silicon Limit) 60a (Package Limit) 60a 35b, c 28b, c 80 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ W TJ, Tstg °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 New Product SiE726DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Typical Maximum 20 24 RthJC (Drain) 0.8 1 RthJC (Source) 2.2 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS(th) IGSS 30 1 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VGS = 0 V, ID = 1 mA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 15 V, ID = 25 A Typ. Max. 0.120 1.0 3 ± 100 0.5 10 Unit Static Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge RDS(on) gfs Ciss Coss Crss Qg VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A Qgs VDS = 15 V, VGS = 4.5 V, ID = 20 A Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance f = 1 MHz td(on) Turn-On Delay Time tr VDD = 15 V, RL = 1.5 Ω Rise Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr VDD = 15 V, RL = 1.5 Ω Rise Time td(off) ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Turn-Off Delay Time tf Fall Time Drain-Source Body Diode and Schottky Characteristics IS Continuous Source-Drain Diode Current TC = 25 °C ISM Pulse Diode Forward Currenta VSD Body Diode Voltage IS = 2 A trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time 25 V V nA mA A 0.0020 0.0026 90 7400 1100 400 105 50 22 12 1 60 35 55 30 20 10 55 10 0.37 40 30 19 21 0.0024 0.0033 Ω S pF 160 75 2 90 55 85 45 30 15 85 15 60 80 0.45 60 45 nC Ω ns A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 New Product SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 20 VGS = 10 V thru 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 50 40 30 20 10 8 TC = 125 °C 4 VGS = 2 V VGS = 3 V 0 0.0 12 TC = 25 °C TC = - 55 °C 0 0.2 0.4 0.6 0.8 1.0 0 1 VDS - Drain-to-Source Voltage (V) 4 Transfer Characteristics 10 000 0.004 C iss 8000 VGS = 4.5 V 0.003 C - Capacitance(pF) RDS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) Output Characteristics VGS = 10 V 0.002 6000 4000 0.001 Coss 2000 Crss 0 0.000 0 20 40 0 60 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) ID -- Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID = 20 A ID = 25 A VGS = 4.5 V 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-SourceVoltage(V) 2 VDS = 15 V 6 VDS = 24 V 4 2 1.4 1.2 VGS = 10 V 1.0 0.8 0 0 25 50 75 100 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 125 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.008 100 TJ = 150 °C 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 25 A TJ = 25 °C 0.006 0.004 TJ = 125 °C 0.002 TJ = 25 °C 0.000 1 0.0 0.2 0.4 0.6 0.8 0 1.0 2 VSD - Source-to-Drain Voltage (V) 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1 50 10-1 IDSX at 10 V 10-2 40 IDSX at 20 V 10-3 Power (W) I R - Reverse Current (A) 4 IDSX at 30 V 30 20 10-4 10-5 10 10-6 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC BVDSS Limited TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 New Product SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 140 120 Power Dissipation (W) ID - Drain Current (A) 160 120 80 40 Package Limited 100 80 60 40 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 New Product SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68626. www.vishay.com 6 Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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